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Class Information
Number: 257/E23.019
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Packaging, interconnects, and markings for semiconductor or other solid-state devices (epo) > Arrangements for conducting electric current to or from solid-state body in operation, e.g., leads, terminal arrangements (epo) > Consisting of lead-in layers inseparably applied to semiconductor body (epo) > Consisting of layered constructions comprising conductive layers and insulating layers, e.g., planar contacts (epo)
Description: This subclass is indented under subclass E23.012. This subclass is substantially the same in scope as ECLA classification H01L23/485.










Sub-classes under this class:

Class Number Class Name Patents
257/E23.02 Bonding areas, e.g., pads (epo) 1,264
257/E23.021 Bump or ball contacts (epo) 2,068
257/E23.022 Overhang structure (epo) 39


Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19

Patent Number Title Of Patent Date Issued
6239029 Sacrificial germanium layer for formation of a contact May. 29, 2001
6236091 Method of forming a local interconnect with improved etch selectivity of silicon dioxide/silicide May. 22, 2001
6232665 Silicon-doped titanium wetting layer for aluminum plug May. 15, 2001
6225675 Integrated circuitry, methods of fabricating integrated circuitry, methods of forming local interconnects, and methods of forming conductive lines May. 1, 2001
6225172 Integrated circuitry and method of forming a field effect transistor May. 1, 2001
6222267 Semiconductor device and manufacturing thereof Apr. 24, 2001
6221757 Method of making a microelectronic structure Apr. 24, 2001
6221760 Semiconductor device having a silicide structure Apr. 24, 2001
6218223 Process for producing electrode for semiconductor element and semiconductor device having the electrode Apr. 17, 2001
6218272 Method for fabricating conductive pad Apr. 17, 2001
6218287 Method of fabricating a semiconductor structure Apr. 17, 2001
6217721 Filling narrow apertures and forming interconnects with a metal utilizing a crystallographically oriented liner layer Apr. 17, 2001
6214728 Method to encapsulate copper plug for interconnect metallization Apr. 10, 2001
6211059 Method of manufacturing semiconductor device having contacts with different depths Apr. 3, 2001
6204161 Self aligned contact pad in a semiconductor device and method for forming the same Mar. 20, 2001
6204561 Semiconductor device having two-layer contact Mar. 20, 2001
6201291 Semiconductor device and method of manufacturing such a device Mar. 13, 2001
6200895 Method of forming an electrical connection Mar. 13, 2001
6201303 Method of forming a local interconnect with improved etch selectivity of silicon dioxide/silicide Mar. 13, 2001
6197686 Aluminum metallization by a barrier metal process Mar. 6, 2001
6194304 Semiconductor device and method of fabricating the same Feb. 27, 2001
RE37059 Wiring pattern of semiconductor integrated circuit device Feb. 20, 2001
6191027 Method of forming flat wiring layer Feb. 20, 2001
6180494 Integrated circuitry, methods of fabricating integrated circuitry, methods of forming local interconnects, and methods of forming conductive lines Jan. 30, 2001
6177346 Integrated circuitry and method of forming a field effect transistor Jan. 23, 2001
6171957 Manufacturing method of semiconductor device having high pressure reflow process Jan. 9, 2001
6163067 Semiconductor apparatus having wiring groove and contact hole in self-alignment manner Dec. 19, 2000
6162721 Semiconductor processing methods Dec. 19, 2000
6162679 Method of manufacturing DRAM capacitor Dec. 19, 2000
6162676 Method of making a semiconductor device with an etching stopper Dec. 19, 2000
6159846 Method of metallization in semiconductor devices Dec. 12, 2000
6156638 Integrated circuitry and method of restricting diffusion from one material to another Dec. 5, 2000
6153527 Semiconductor processing method of making electrical contact to a node received within a mass of insulating dielectric material Nov. 28, 2000
6153517 Low resistance poly landing pad Nov. 28, 2000
6153516 Method of fabricating a modified polysilicon plug structure Nov. 28, 2000
6153515 Method of forming multilayered film Nov. 28, 2000
6147405 Asymmetric, double-sided self-aligned silicide and method of forming the same Nov. 14, 2000
6144099 Semiconductor metalization barrier Nov. 7, 2000
6144097 Semiconductor device and method of fabricating the same Nov. 7, 2000
6140229 Semiconductor apparatus and method of producing same Oct. 31, 2000
6140705 Self-aligned contact through a conducting layer Oct. 31, 2000
6140153 Lead frame, the manufacturing method, semiconductor device and the manufacturing method Oct. 31, 2000
6140219 Method of forming contact openings Oct. 31, 2000
RE36938 Method of forming a landing pad structure in an integrated circuit Oct. 31, 2000
6136095 Apparatus for filling apertures in a film layer on a semiconductor substrate Oct. 24, 2000
6136692 Method for forming metal plug electrode in semiconductor device Oct. 24, 2000
6136698 Method of increasing contact area of a contact window Oct. 24, 2000
6137176 Semiconductor device and method of fabricating the same Oct. 24, 2000
6133139 Self-aligned composite insulator with sub-half-micron multilevel high density electrical interconnections and process thereof Oct. 17, 2000
6133627 Semiconductor chip package with center contacts Oct. 17, 2000

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