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Class Information
Number: 257/E23.016
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Packaging, interconnects, and markings for semiconductor or other solid-state devices (epo) > Arrangements for conducting electric current to or from solid-state body in operation, e.g., leads, terminal arrangements (epo) > Consisting of lead-in layers inseparably applied to semiconductor body (epo) > For devices consisting of semiconductor layers on insulating or semi-insulating substrates, e.g., silicon on sapphire devices, i.e., sos (epo)
Description: This subclass is indented under subclass E23.012. This subclass is substantially the same in scope as ECLA classification H01L23/482J.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7408193 |
Semiconductor device and manufacturing method thereof |
Aug. 5, 2008 |
| 7323771 |
Electronic circuit device |
Jan. 29, 2008 |
| 7274099 |
Method of embedding semiconductor chip in support plate |
Sep. 25, 2007 |
| 7253504 |
Integrated circuit package and method |
Aug. 7, 2007 |
| 6903446 |
Pattern for improved visual inspection of semiconductor devices |
Jun. 7, 2005 |
| 6727552 |
Semiconductor device and method of manufacturing the same |
Apr. 27, 2004 |
| 6700135 |
Active matrix panel |
Mar. 2, 2004 |
| 6509591 |
Thin film transistor with photoconductive material |
Jan. 21, 2003 |
| 6486497 |
Liquid crystal device, projection type display device and driving circuit |
Nov. 26, 2002 |
| 6452272 |
Semiconductor device |
Sep. 17, 2002 |
| 6351014 |
Semiconductor device having different field oxide sizes |
Feb. 26, 2002 |
| 6294834 |
Structure of combined passive elements and logic circuit on a silicon on insulator wafer |
Sep. 25, 2001 |
| 6255731 |
SOI bonding structure |
Jul. 3, 2001 |
| 6198134 |
Semiconductor device having a common substrate bias |
Mar. 6, 2001 |
| 5811837 |
Liquid crystal device with unit cell pitch twice the picture element pitch |
Sep. 22, 1998 |
| 5780872 |
Liquid crystal device, projection type color display device and driving circuit |
Jul. 14, 1998 |
| 5754158 |
Liquid crystal device |
May. 19, 1998 |
| 5747867 |
Integrated circuit structure with interconnect formed along walls of silicon island |
May. 5, 1998 |
| 5714771 |
Projection type color display device, liquid crystal device, active matrix assembly and electric view finder |
Feb. 3, 1998 |
| 5705425 |
Process for manufacturing semiconductor devices separated by an air-bridge |
Jan. 6, 1998 |
| 5677212 |
Method of forming a liquid crystal device |
Oct. 14, 1997 |
| 5656826 |
Liquid crystal device with thick passivation layer over driver region |
Aug. 12, 1997 |
| 5652454 |
Semiconductor device on an SOI substrate |
Jul. 29, 1997 |
| 5648685 |
Active matrix assembly with lines of equal resistance |
Jul. 15, 1997 |
| 5616936 |
Active matrix assembly with signal line crossing to equalize stray capacitance |
Apr. 1, 1997 |
| 5608557 |
Circuitry with gate line crossing semiconductor line at two or more channels |
Mar. 4, 1997 |
| 5598012 |
Thin-film transistor with wide gate electrode and liquid crystal display incorporating same |
Jan. 28, 1997 |
| 5591990 |
Active matrix assembly |
Jan. 7, 1997 |
| 5587597 |
Semiconductor-on-insulator device interconnects |
Dec. 24, 1996 |
| 5583347 |
Liquid crystal device |
Dec. 10, 1996 |
| 5557534 |
Forming array with metal scan lines to control semiconductor gate lines |
Sep. 17, 1996 |
| 5514885 |
SOI methods and apparatus |
May. 7, 1996 |
| 5479052 |
Contact structure with capacitor for group III-V semiconductor devices |
Dec. 26, 1995 |
| 5479038 |
Semiconductor device having a multilevel metallization |
Dec. 26, 1995 |
| 5449642 |
Method of forming metal-disilicide layers and contacts |
Sep. 12, 1995 |
| 5428250 |
Line material, electronic device using the line material and liquid crystal display |
Jun. 27, 1995 |
| 5387817 |
Dielectric isolation substrate having single-crystal silicon islands surrounded by groove and lower conductive layer filling the groove therewith |
Feb. 7, 1995 |
| 5368880 |
Eutectic bond and method of gold/titanium eutectic bonding of cadmium telluride to sapphire |
Nov. 29, 1994 |
| 5341012 |
CMOS device for use in connection with an active matrix panel |
Aug. 23, 1994 |
| 5320973 |
Method of fabricating a thin-film transistor and wiring matrix device |
Jun. 14, 1994 |
| 5274279 |
Thin film CMOS inverter |
Dec. 28, 1993 |
| 5264728 |
Line material, electronic device using the line material and liquid crystal display |
Nov. 23, 1993 |
| 5250931 |
Active matrix panel having display and driver TFT's on the same substrate |
Oct. 5, 1993 |
| 5136358 |
Multi-layered wiring structure |
Aug. 4, 1992 |
| 5066613 |
Process for making semiconductor-on-insulator device interconnects |
Nov. 19, 1991 |
| 5047819 |
Amorphous-silicon thin film transistor array substrate |
Sep. 10, 1991 |
| 5026656 |
MOS transistor with improved radiation hardness |
Jun. 25, 1991 |
| 5012311 |
Semiconductor thin film device with thick insulator at gate edge |
Apr. 30, 1991 |
| 4974051 |
MOS transistor with improved radiation hardness |
Nov. 27, 1990 |
| 4965213 |
Silicon-on-insulator transistor with body node to source node connection |
Oct. 23, 1990 |
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