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Class Information
Number: 257/E21.701
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components or integrated circuits formed in, or on, common substrate (epo) > With subsequent division of substrate into plural individual devices (epo) > Substrate is nonsemiconductor body, e.g., insulating body (epo) > Substrate is sapphire, e.g., silicon on sapphire structure (sos) (epo)
Description: This subclass is indented under subclass E21.7. This subclass is substantially the same in scope as ECLA classification H01L21/784.










Patents under this class:

Patent Number Title Of Patent Date Issued
8492186 Method for producing group III nitride semiconductor layer, group III nitride semiconductor light-emitting device, and lamp Jul. 23, 2013
7781242 Method of forming vertical structure light emitting diode with heat exhaustion structure Aug. 24, 2010
7727874 Non-polar and semi-polar GaN substrates, devices, and methods for making them Jun. 1, 2010
7709314 Semiconductor switching devices and fabrication methods May. 4, 2010
7662720 3-Dimensional flash memory device and method of fabricating the same Feb. 16, 2010
6040235 Methods and apparatus for producing integrated circuit devices Mar. 21, 2000
5654226 Wafer bonding for power devices Aug. 5, 1997











 
 
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