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Class Information
Number: 257/E21.698
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components or integrated circuits formed in, or on, common substrate (epo) > With subsequent division of substrate into plural individual devices (epo) > To produce devices each consisting of plurality of components, e.g., integrated circuits (epo) > Substrate is group ii-vi semiconductor (epo)
Description: This subclass is indented under subclass E21.602. This subclass is substantially the same in scope as ECLA classification H01L21/8254.










Patents under this class:

Patent Number Title Of Patent Date Issued
8685848 Manufacturing method of silicon carbide semiconductor device Apr. 1, 2014
7696073 Method of co-doping group 14 (4B) elements to produce ZnTe system compound semiconductor single crystal Apr. 13, 2010
7553746 Method for manufacturing electrodes on a semiconducting material of type II-VI or on a compound of this material Jun. 30, 2009
7172939 Method and structure for fabricating non volatile memory arrays Feb. 6, 2007
6215136 Integrated circuit capable of low-noise and high-power microwave operation Apr. 10, 2001
5701019 Semiconductor device having first and second stacked semiconductor layers, with electrical contact to the first semiconductor layer Dec. 23, 1997
5274263 FET structure for use in narrow bandgap semiconductors Dec. 28, 1993
5254492 Method of fabricating an integrated circuit for providing low-noise and high-power microwave operation Oct. 19, 1993
5130259 Infrared staring imaging array and method of manufacture Jul. 14, 1992
5064771 Method of forming crystal array Nov. 12, 1991
4940672 Method of making monolithic integrated III-V type laser devices and silicon devices on silicon Jul. 10, 1990











 
 
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