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Class Information
Number: 257/E21.698
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components or integrated circuits formed in, or on, common substrate (epo) > With subsequent division of substrate into plural individual devices (epo) > To produce devices each consisting of plurality of components, e.g., integrated circuits (epo) > Substrate is group ii-vi semiconductor (epo)
Description: This subclass is indented under subclass E21.602. This subclass is substantially the same in scope as ECLA classification H01L21/8254.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7553746 |
Method for manufacturing electrodes on a semiconducting material of type II-VI or on a compound of this material |
Jun. 30, 2009 |
| 7172939 |
Method and structure for fabricating non volatile memory arrays |
Feb. 6, 2007 |
| 6215136 |
Integrated circuit capable of low-noise and high-power microwave operation |
Apr. 10, 2001 |
| 5701019 |
Semiconductor device having first and second stacked semiconductor layers, with electrical contact to the first semiconductor layer |
Dec. 23, 1997 |
| 5274263 |
FET structure for use in narrow bandgap semiconductors |
Dec. 28, 1993 |
| 5254492 |
Method of fabricating an integrated circuit for providing low-noise and high-power microwave operation |
Oct. 19, 1993 |
| 5130259 |
Infrared staring imaging array and method of manufacture |
Jul. 14, 1992 |
| 5064771 |
Method of forming crystal array |
Nov. 12, 1991 |
| 4940672 |
Method of making monolithic integrated III-V type laser devices and silicon devices on silicon |
Jul. 10, 1990 |
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