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Class Information
Number: 257/E21.695
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components or integrated circuits formed in, or on, common substrate (epo) > With subsequent division of substrate into plural individual devices (epo) > To produce devices each consisting of plurality of components, e.g., integrated circuits (epo) > Substrate being semiconductor, using silicon technology (epo) > Combination of bipolar and field-effect technologies (epo)
Description: This subclass is indented under subclass E21.606. This subclass is substantially the same in scope as ECLA classification H01L21/8248.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.696 Bipolar and mos technologies (epo) 796


Patents under this class:
1 2

Patent Number Title Of Patent Date Issued
8692288 Heterojunction bipolar transistors and methods of manufacture Apr. 8, 2014
8669621 Semiconductor device and method of manufacturing semiconductor device Mar. 11, 2014
8546939 RF module including control IC without the aid of a relay pad Oct. 1, 2013
8237191 Heterojunction bipolar transistors and methods of manufacture Aug. 7, 2012
8207035 Method of forming an integrated power device and structure Jun. 26, 2012
8115256 Semiconductor device Feb. 14, 2012
7956423 Semiconductor device with trench gate and method of manufacturing the same Jun. 7, 2011
7772060 Integrated SiGe NMOS and PMOS transistors Aug. 10, 2010
7534680 Bipolar transistor, BiCMOS device, and method for fabricating thereof May. 19, 2009
6278143 Semiconductor device with bipolar and J-FET transistors Aug. 21, 2001
6144077 Semiconductor device comprising a bipolar transistor Nov. 7, 2000
5912479 Heterojunction bipolar semiconductor device Jun. 15, 1999
5652153 Method of making JFET structures for semiconductor devices with complementary bipolar transistors Jul. 29, 1997
5624854 Method of formation of bipolar transistor having reduced parasitic capacitance Apr. 29, 1997
5504363 Semiconductor device Apr. 2, 1996
5488005 Process for manufacturing an offset gate structure thin film transistor Jan. 30, 1996
5466621 Method of manufacturing a semiconductor device having silicon islands Nov. 14, 1995
5466621 Method of manufacturing a semiconductor device having silicon islands Nov. 14, 1995
5391504 Method for producing integrated quasi-complementary bipolar transistors and field effect transistors Feb. 21, 1995
5356821 Method for manufacturing semiconductor integrated circuit device Oct. 18, 1994
5352617 Method for manufacturing Bi-CMOS transistor devices Oct. 4, 1994
5348907 Method of fabricating of semiconductor device by forming two electrically insulated wells of the same type electroconductivity on semiconductor substrate Sep. 20, 1994
5346834 Method for manufacturing a semiconductor device and a semiconductor memory device Sep. 13, 1994
5342480 Method of manufacturing a semiconductor integrated circuit device Aug. 30, 1994
5280188 Method of manufacturing a semiconductor integrated circuit device having at least one bipolar transistor and a plurality of MOS transistors Jan. 18, 1994
5270249 Fabrication process of a semiconductor device having a reduced parasitic capacitance Dec. 14, 1993
5254864 Semiconductor device Oct. 19, 1993
5246871 Method of manufacturing a semiconductor device comprising a control circuit and a power stage with a vertical current flow, integrated in monolithic form on a single chip Sep. 21, 1993
5153697 Integrated circuit that combines multi-epitaxial power transistors with logic/analog devices, and a process to produce same Oct. 6, 1992
5144408 Semiconductor integrated circuit device and method of manufacturing the same Sep. 1, 1992
5119161 Semiconductor device comprising a control circuit and a power stage with a vertical current flow, integrated in monolithic form on a single chip Jun. 2, 1992
5115289 Semiconductor device and semiconductor memory device May. 19, 1992
5104817 Method of forming bipolar transistor with integral base emitter load resistor Apr. 14, 1992
5077228 Process for simultaneous formation of trench contact and vertical transistor gate and structure Dec. 31, 1991
5034337 Method of making an integrated circuit that combines multi-epitaxial power transistors with logic/analog devices Jul. 23, 1991
5006476 Transistor manufacturing process using three-step base doping Apr. 9, 1991
4980303 Manufacturing method of a Bi-MIS semiconductor device Dec. 25, 1990
4949137 Semiconductor device Aug. 14, 1990
4939099 Process for fabricating isolated vertical bipolar and JFET transistors Jul. 3, 1990
4935800 Semiconductor integrated circuit Jun. 19, 1990
4898839 Semiconductor integrated circuit and manufacturing method therefor Feb. 6, 1990
4808547 Method of fabrication of high voltage IC bopolar transistors operable to BV.sub.CBO Feb. 28, 1989
4783423 Fabrication of a semiconductor device containing deep emitter and another transistor with shallow doped region Nov. 8, 1988
4729008 High voltage IC bipolar transistors operable to BV.sub.CBO and method of fabrication Mar. 1, 1988
4553318 Method of making integrated PNP and NPN bipolar transistors and junction field effect transistor Nov. 19, 1985
4550490 Monolithic integrated circuit Nov. 5, 1985
4546370 Monolithic integration of logic, control and high voltage interface circuitry Oct. 8, 1985
4497106 Semiconductor device and a method of manufacturing the same Feb. 5, 1985
4481707 Method for the fabrication of dielectric isolated junction field effect transistor and PNP transistor Nov. 13, 1984
4443933 Utilizing multi-layer mask to define isolation and device zones in a semiconductor substrate Apr. 24, 1984

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