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Class Information
Number: 257/E21.694
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components or integrated circuits formed in, or on, common substrate (epo) > With subsequent division of substrate into plural individual devices (epo) > To produce devices each consisting of plurality of components, e.g., integrated circuits (epo) > Substrate being semiconductor, using silicon technology (epo) > Field-effect technology (epo) > Mis technology (epo) > Dynamic random access memory structures (dram) (epo) > Read-only memory structures (rom), i.e., nonvolatile memory structures (epo) > Electrically programmable (eprom), i.e., floating gate memory structures (epo) > With doped region as control gate (epo)
Description: This subclass is indented under subclass E21.68. This subclass is substantially the same in scope as ECLA classification H01L21/8247S.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8610193 Semiconductor constructions, NAND unit cells, methods of forming semiconductor constructions, and methods of forming NAND unit cells Dec. 17, 2013
RE44156 Method for forming single-level electrically erasable and programmable read only memory operated in environment with high/low-voltage Apr. 16, 2013
8350291 Modulation-doped multi-gate devices Jan. 8, 2013
8120063 Modulation-doped multi-gate devices Feb. 21, 2012
8035141 Bi-layer nFET embedded stressor element and integration to enhance drive current Oct. 11, 2011
7977226 Flash memory device and method of fabricating the same Jul. 12, 2011
7807518 Semiconductor memory device and manufacturing method thereof Oct. 5, 2010
7719046 Apparatus and method for trench transistor memory having different gate dielectric thickness May. 18, 2010
7709884 Non-volatile two transistor semiconductor memory cell and method for producing the same May. 4, 2010
7649259 Semiconductor device including a plurality of wiring lines Jan. 19, 2010
7391078 Non-volatile memory and manufacturing and operating method thereof Jun. 24, 2008
7365383 Method of forming an EPROM cell and structure therefor Apr. 29, 2008
7314796 Methods for reducing wordline sheet resistance Jan. 1, 2008
7172937 Method of manufacturing a non-volatile memory cell Feb. 6, 2007
7056785 Non-volatile memory cell fabricated with slight modification to a conventional logic process and methods of operating same Jun. 6, 2006
7052959 Method of forming an EPROM cell and structure therefor May. 30, 2006
6995436 Nonvolatile semiconductor memory device Feb. 7, 2006
6977411 Semiconductor device comprising transistors having control gates and floating gate electrodes Dec. 20, 2005
6949790 Semiconductor device and its manufacturing method Sep. 27, 2005
6949784 Zero-cost non-volatile memory cell with write and erase features Sep. 27, 2005
6940119 Non-volatile programmable and electrically erasable memory with a single layer of gate material Sep. 6, 2005
6930002 Method for programming single-poly EPROM at low operation voltages Aug. 16, 2005
6914825 Semiconductor memory device having improved data retention Jul. 5, 2005
6897113 Single poly EEPROM with improved coupling ratio May. 24, 2005
6867622 Method and apparatus for dual conduction analog programming Mar. 15, 2005
6846714 Voltage limited EEPROM device and process for fabricating the device Jan. 25, 2005
6842374 Method for operating N-channel electrically erasable programmable logic device Jan. 11, 2005
6841821 Non-volatile memory cell fabricated with slight modification to a conventional logic process and methods of operating same Jan. 11, 2005
6841447 EEPROM device having an isolation-bounded tunnel capacitor and fabrication process Jan. 11, 2005
6833602 Device having electrically isolated low voltage and high voltage regions and process for fabricating the device Dec. 21, 2004
6829127 High performance capacitor structure Dec. 7, 2004
6822285 EEPROM with multi-member floating gate Nov. 23, 2004
6818942 Non-volatile semiconductor storage device having conductive layer surrounding floating gate Nov. 16, 2004
6808169 Non-volatile memory with crown electrode to increase capacitance between control gate and floating gate Oct. 26, 2004
6794236 Eeprom device with improved capacitive coupling and fabrication process Sep. 21, 2004
6788574 Electrically-alterable non-volatile memory cell Sep. 7, 2004
6781883 Apparatus and method for margin testing single polysilicon EEPROM cells Aug. 24, 2004
6770933 Single poly eeprom with improved coupling ratio Aug. 3, 2004
6740556 Method for forming EPROM with low leakage May. 25, 2004
6737702 Zero power memory cell with reduced threshold voltage May. 18, 2004
6731541 Low voltage single poly deep sub-micron flash EEPROM May. 4, 2004
6716705 EEPROM device having a retrograde program junction region and process for fabricating the device Apr. 6, 2004
6711064 Single-poly EEPROM Mar. 23, 2004
6696723 Electrically erasable, programmable, non-volatile memory device compatible with a CMOS/SOI production process Feb. 24, 2004
6674119 Non-volatile semiconductor memory device and semiconductor integrated circuit Jan. 6, 2004
6660579 Zero power memory cell with improved data retention Dec. 9, 2003
6646919 Apparatus and method for margin testing single polysilicon EEPROM cells Nov. 11, 2003
6631087 Low voltage single poly deep sub-micron flash eeprom Oct. 7, 2003
6596587 Shallow junction EEPROM device and process for fabricating the device Jul. 22, 2003
6576950 EEPROM type non-volatile memory cell and corresponding production method Jun. 10, 2003

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