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Class Information
Number: 257/E21.692
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components or integrated circuits formed in, or on, common substrate (epo) > With subsequent division of substrate into plural individual devices (epo) > To produce devices each consisting of plurality of components, e.g., integrated circuits (epo) > Substrate being semiconductor, using silicon technology (epo) > Field-effect technology (epo) > Mis technology (epo) > Dynamic random access memory structures (dram) (epo) > Read-only memory structures (rom), i.e., nonvolatile memory structures (epo) > Electrically programmable (eprom), i.e., floating gate memory structures (epo) > With conductive layer as control gate (epo) > With source and drain on different levels, e.g., sloping channel (epo)
Description: This subclass is indented under subclass E21.681. This subclass is substantially the same in scope as ECLA classification H01L21/8247M8.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.693 For vertical channel (epo) 145


Patents under this class:

Patent Number Title Of Patent Date Issued
8012819 Semiconductor device including gate stack formed on inclined surface and method of fabricating the same Sep. 6, 2011
7948017 Digital radiography imager with buried interconnect layer in silicon-on-glass and method of fabricating same May. 24, 2011
7923326 Memory device and method for manufacturing the same Apr. 12, 2011
7847342 Non-volatile semiconductor storage device and method of manufacturing the same Dec. 7, 2010
7709380 Method for gate electrode height control May. 4, 2010
7704834 Method for forming split gate flash nonvolatile memory devices Apr. 27, 2010
7005698 Split gate flash memory cell Feb. 28, 2006
6984863 Semiconductor decive and semiconductor memory using the same Jan. 10, 2006
6952033 Semiconductor memory array of floating gate memory cells with buried bit-line and raised source line Oct. 4, 2005
6952034 Semiconductor memory array of floating gate memory cells with buried source line and floating gate Oct. 4, 2005
6936887 Non-volatile memory cells utilizing substrate trenches Aug. 30, 2005
6894343 Floating gate memory cells utilizing substrate trenches to scale down their size May. 17, 2005
6891220 Method of programming electrons onto a floating gate of a non-volatile memory cell May. 10, 2005
6882572 Method of operating a semiconductor memory array of floating gate memory cells with horizontally oriented edges Apr. 19, 2005
6870215 Semiconductor memory and its production process Mar. 22, 2005
6870214 Method of fabricating flash EEPROM Mar. 22, 2005
6822287 Array of integrated circuit units with strapping lines to prevent punch through Nov. 23, 2004
6821849 Split gate flash memory cell and manufacturing method thereof Nov. 23, 2004
6815758 Flash memory cell Nov. 9, 2004
6768162 Split gate flash memory cell and manufacturing method thereof Jul. 27, 2004
6756633 Semiconductor memory array of floating gate memory cells with horizontally oriented floating gate edges Jun. 29, 2004
6734066 Method for fabricating split gate flash memory cell May. 11, 2004
6580641 Method of forming and operating trench split gate non-volatile flash memory cell structure Jun. 17, 2003
6555870 Nonvolatile semiconductor memory device and method for producing same Apr. 29, 2003
6518126 Method of forming and operating trench split gate non-volatile flash memory cell structure Feb. 11, 2003
6504755 Semiconductor memory device Jan. 7, 2003
6372564 Method of manufacturing V-shaped flash memory Apr. 16, 2002
6368917 Methods of fabricating floating gate semiconductor device with reduced erase voltage Apr. 9, 2002
6236082 Floating gate semiconductor device with reduced erase voltage May. 22, 2001
6232632 Double density non-volatile memory cells May. 15, 2001
6157058 Low voltage EEPROM/NVRAM transistors and making method Dec. 5, 2000
6118147 Double density non-volatile memory cells Sep. 12, 2000
6008089 Method of fabricating a split gate flash memory device Dec. 28, 1999
5982669 EPROM and flash memory cells with source-side injection Nov. 9, 1999
5877525 Flash EEPROM cell and method of making the same Mar. 2, 1999
5874337 Method of forming eeprom cell with channel hot electron programming Feb. 23, 1999
5859453 Flash EEPROM cell and method of making the same Jan. 12, 1999
5780341 Low voltage EEPROM/NVRAM transistors and making method Jul. 14, 1998
5753951 EEPROM cell with channel hot electron programming and method for forming the same May. 19, 1998
5652161 Method of making split gate flash EEPROM cell Jul. 29, 1997
5612237 Method of making flash EEPROM cell Mar. 18, 1997
4222062 VMOS Floating gate memory device Sep. 9, 1980











 
 
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