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Class Information
Number: 257/E21.686
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components or integrated circuits formed in, or on, common substrate (epo) > With subsequent division of substrate into plural individual devices (epo) > To produce devices each consisting of plurality of components, e.g., integrated circuits (epo) > Substrate being semiconductor, using silicon technology (epo) > Field-effect technology (epo) > Mis technology (epo) > Dynamic random access memory structures (dram) (epo) > Read-only memory structures (rom), i.e., nonvolatile memory structures (epo) > Electrically programmable (eprom), i.e., floating gate memory structures (epo) > With conductive layer as control gate (epo) > With source and drain on same level and without cell select transistor (epo) > Simultaneous fabrication of periphery and memory cells (epo) > Including one type of peripheral fet (epo) > Intergate dielectric layer used for peripheral fet (epo)
Description: This subclass is indented under subclass E21.684. This subclass is substantially the same in scope as ECLA classification H01L21/8247M2P1D.










Patents under this class:

Patent Number Title Of Patent Date Issued
8138043 Non-volatile semiconductor memory device and method of manufacturing the same Mar. 20, 2012
8076713 Non-volatile memory devices having a multi-layered charge storage layer Dec. 13, 2011
8034681 Method of forming flash memory device having inter-gate plug Oct. 11, 2011
7948026 Non-volatile semiconductor memory device and method of manufacturing the same May. 24, 2011
7750384 Flash memory device having intergated plug Jul. 6, 2010
7563664 Semiconductor memory device equipped with memory transistor and peripheral transistor and method of manufacturing the same Jul. 21, 2009
7547951 Semiconductor devices having nitrogen-incorporated active region and methods of fabricating the same Jun. 16, 2009
7371640 Semiconductor device with floating trap type nonvolatile memory cell and method for manufacturing the same May. 13, 2008
7029968 Method of forming a PIP capacitor Apr. 18, 2006
6974748 Semiconductor device with split gate electrode structure and method for manufacturing the semiconductor device Dec. 13, 2005
6933197 Method of manufacturing semiconductor device Aug. 23, 2005
6885070 Semiconductor memory device and fabrication method thereof Apr. 26, 2005
6747309 Method of manufacturing an integrated semiconductor device having a nonvolatile floating gate memory, and related integrated device Jun. 8, 2004
6589843 Methods of forming FLASH field effect transistor gates and non-FLASH field effect transistor gates Jul. 8, 2003
6548855 Non-volatile memory dielectric as charge pump dielectric Apr. 15, 2003
6509225 Semiconductor device and method of manufacturing the same Jan. 21, 2003
6479346 Semiconductor memory device and fabrication method thereof Nov. 12, 2002
6462386 Semiconductor device and method of manufacturing the same Oct. 8, 2002
6399442 Method of manufacturing an integrated semiconductor device having a nonvolatile floating gate memory, and related integrated device Jun. 4, 2002
6333223 Semiconductor device and method of manufacturing the same Dec. 25, 2001
6331724 Single transistor E2prom memory device with controlled erasing Dec. 18, 2001
6319780 Process for the fabrication of an integrated circuit comprising MOS transistors for low voltage, EPROM cells and MOS transistors for high voltage Nov. 20, 2001
6251729 Method of manufacturing a nonvolatile memory Jun. 26, 2001
6114203 Method of manufacturing a MOS integrated circuit having components with different dielectrics Sep. 5, 2000
6034416 Semiconductor device and method for fabricating the same Mar. 7, 2000
6015732 Dual gate oxide process with increased reliability Jan. 18, 2000
6004829 Method of increasing end point detection capability of reactive ion etching by adding pad area Dec. 21, 1999
5925908 Integrated circuit including a non-volatile memory device and a semiconductor device Jul. 20, 1999
5773861 Single transistor E.sup.2 PROM memory device Jun. 30, 1998
5635416 Manufacturing method to fabricate a semiconductor integrated circuit with on-chip non-volatile memories Jun. 3, 1997
5428572 Program element for use in redundancy technique for semiconductor memory device Jun. 27, 1995
5158902 Method of manufacturing logic semiconductor device having non-volatile memory Oct. 27, 1992
5104819 Fabrication of interpoly dielctric for EPROM-related technologies Apr. 14, 1992
5094967 Method for manufacturing semiconductor device having a non-volatile memory cell and logic regions by using a CVD second insulating film Mar. 10, 1992
5063431 Semiconductor device having a two-layer gate structure Nov. 5, 1991
5034798 Semiconductor device having a two-layer gate structure Jul. 23, 1991
4822750 MOS floating gate memory cell containing tunneling diffusion region in contact with drain and extending under edges of field oxide Apr. 18, 1989
4701776 MOS floating gate memory cell and process for fabricating same Oct. 20, 1987
4377818 High density electrically programmable ROM Mar. 22, 1983
4258466 High density electrically programmable ROM Mar. 31, 1981











 
 
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