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Class Information
Number: 257/E21.686
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components or integrated circuits formed in, or on, common substrate (epo) > With subsequent division of substrate into plural individual devices (epo) > To produce devices each consisting of plurality of components, e.g., integrated circuits (epo) > Substrate being semiconductor, using silicon technology (epo) > Field-effect technology (epo) > Mis technology (epo) > Dynamic random access memory structures (dram) (epo) > Read-only memory structures (rom), i.e., nonvolatile memory structures (epo) > Electrically programmable (eprom), i.e., floating gate memory structures (epo) > With conductive layer as control gate (epo) > With source and drain on same level and without cell select transistor (epo) > Simultaneous fabrication of periphery and memory cells (epo) > Including one type of peripheral fet (epo) > Intergate dielectric layer used for peripheral fet (epo)
Description: This subclass is indented under subclass E21.684. This subclass is substantially the same in scope as ECLA classification H01L21/8247M2P1D.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 8138043 |
Non-volatile semiconductor memory device and method of manufacturing the same |
Mar. 20, 2012 |
| 8076713 |
Non-volatile memory devices having a multi-layered charge storage layer |
Dec. 13, 2011 |
| 8034681 |
Method of forming flash memory device having inter-gate plug |
Oct. 11, 2011 |
| 7948026 |
Non-volatile semiconductor memory device and method of manufacturing the same |
May. 24, 2011 |
| 7750384 |
Flash memory device having intergated plug |
Jul. 6, 2010 |
| 7563664 |
Semiconductor memory device equipped with memory transistor and peripheral transistor and method of manufacturing the same |
Jul. 21, 2009 |
| 7547951 |
Semiconductor devices having nitrogen-incorporated active region and methods of fabricating the same |
Jun. 16, 2009 |
| 7371640 |
Semiconductor device with floating trap type nonvolatile memory cell and method for manufacturing the same |
May. 13, 2008 |
| 7029968 |
Method of forming a PIP capacitor |
Apr. 18, 2006 |
| 6974748 |
Semiconductor device with split gate electrode structure and method for manufacturing the semiconductor device |
Dec. 13, 2005 |
| 6933197 |
Method of manufacturing semiconductor device |
Aug. 23, 2005 |
| 6885070 |
Semiconductor memory device and fabrication method thereof |
Apr. 26, 2005 |
| 6747309 |
Method of manufacturing an integrated semiconductor device having a nonvolatile floating gate memory, and related integrated device |
Jun. 8, 2004 |
| 6589843 |
Methods of forming FLASH field effect transistor gates and non-FLASH field effect transistor gates |
Jul. 8, 2003 |
| 6548855 |
Non-volatile memory dielectric as charge pump dielectric |
Apr. 15, 2003 |
| 6509225 |
Semiconductor device and method of manufacturing the same |
Jan. 21, 2003 |
| 6479346 |
Semiconductor memory device and fabrication method thereof |
Nov. 12, 2002 |
| 6462386 |
Semiconductor device and method of manufacturing the same |
Oct. 8, 2002 |
| 6399442 |
Method of manufacturing an integrated semiconductor device having a nonvolatile floating gate memory, and related integrated device |
Jun. 4, 2002 |
| 6333223 |
Semiconductor device and method of manufacturing the same |
Dec. 25, 2001 |
| 6331724 |
Single transistor E2prom memory device with controlled erasing |
Dec. 18, 2001 |
| 6319780 |
Process for the fabrication of an integrated circuit comprising MOS transistors for low voltage, EPROM cells and MOS transistors for high voltage |
Nov. 20, 2001 |
| 6251729 |
Method of manufacturing a nonvolatile memory |
Jun. 26, 2001 |
| 6114203 |
Method of manufacturing a MOS integrated circuit having components with different dielectrics |
Sep. 5, 2000 |
| 6034416 |
Semiconductor device and method for fabricating the same |
Mar. 7, 2000 |
| 6015732 |
Dual gate oxide process with increased reliability |
Jan. 18, 2000 |
| 6004829 |
Method of increasing end point detection capability of reactive ion etching by adding pad area |
Dec. 21, 1999 |
| 5925908 |
Integrated circuit including a non-volatile memory device and a semiconductor device |
Jul. 20, 1999 |
| 5773861 |
Single transistor E.sup.2 PROM memory device |
Jun. 30, 1998 |
| 5635416 |
Manufacturing method to fabricate a semiconductor integrated circuit with on-chip non-volatile memories |
Jun. 3, 1997 |
| 5428572 |
Program element for use in redundancy technique for semiconductor memory device |
Jun. 27, 1995 |
| 5158902 |
Method of manufacturing logic semiconductor device having non-volatile memory |
Oct. 27, 1992 |
| 5104819 |
Fabrication of interpoly dielctric for EPROM-related technologies |
Apr. 14, 1992 |
| 5094967 |
Method for manufacturing semiconductor device having a non-volatile memory cell and logic regions by using a CVD second insulating film |
Mar. 10, 1992 |
| 5063431 |
Semiconductor device having a two-layer gate structure |
Nov. 5, 1991 |
| 5034798 |
Semiconductor device having a two-layer gate structure |
Jul. 23, 1991 |
| 4822750 |
MOS floating gate memory cell containing tunneling diffusion region in contact with drain and extending under edges of field oxide |
Apr. 18, 1989 |
| 4701776 |
MOS floating gate memory cell and process for fabricating same |
Oct. 20, 1987 |
| 4377818 |
High density electrically programmable ROM |
Mar. 22, 1983 |
| 4258466 |
High density electrically programmable ROM |
Mar. 31, 1981 |
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