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Class Information
Number: 257/E21.682
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components or integrated circuits formed in, or on, common substrate (epo) > With subsequent division of substrate into plural individual devices (epo) > To produce devices each consisting of plurality of components, e.g., integrated circuits (epo) > Substrate being semiconductor, using silicon technology (epo) > Field-effect technology (epo) > Mis technology (epo) > Dynamic random access memory structures (dram) (epo) > Read-only memory structures (rom), i.e., nonvolatile memory structures (epo) > Electrically programmable (eprom), i.e., floating gate memory structures (epo) > With conductive layer as control gate (epo) > With source and drain on same level and without cell select transistor (epo)
Description: This subclass is indented under subclass E21.681. This subclass is substantially the same in scope as ECLA classification H01L21/8247M2.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.683 Simultaneous fabrication of periphery and memory cells (epo) 109


Patents under this class:

Patent Number Title Of Patent Date Issued
8558303 Semiconductor memory devices and methods of manufacturing and operating same Oct. 15, 2013
8507971 Apparatus and method for a memory array with shallow trench isolation regions between bit lines for increased process margins Aug. 13, 2013
8502296 Non-volatile memory cell with asymmetrical split gate and related system and method Aug. 6, 2013
8476691 High reliability-high voltage junction termination with charge dissipation layer Jul. 2, 2013
8470704 Nonvolatile memory device and method of forming the nonvolatile memory device including giving an upper portion of an insulating layer an etching selectivity with respect to a lower portion Jun. 25, 2013
8446011 Devices and memory arrays including bit lines and bit line contacts May. 21, 2013
8349686 Nonvolatile semiconductor memory device and method of manufacturing the same Jan. 8, 2013
8330204 Non-volatile NAND memory semiconductor integrated circuit Dec. 11, 2012
8319277 Semiconductor device, method of manufacturing same, and apparatus for designing same Nov. 27, 2012
8310008 Electronic device including a gate electrode having portions with different conductivity types Nov. 13, 2012
8203178 System and method for reducing process-induced charging Jun. 19, 2012
8076710 Semiconductor device and method for manufacturing the same Dec. 13, 2011
8063430 Semiconductor devices and methods of manufacturing and operating same Nov. 22, 2011
8008704 Nonvolatile semiconductor memory device and method of manufacturing the same Aug. 30, 2011
8004031 Memory device transistors Aug. 23, 2011
7968407 Methods of manufacturing semiconductor memory devices Jun. 28, 2011
7919823 EEPROM array with well contacts Apr. 5, 2011
7910436 Isolated-nitride-region non-volatile memory cell and fabrication method Mar. 22, 2011
7897458 Method of forming floating gate, non-volatile memory device using the same, and fabricating method thereof Mar. 1, 2011
7883984 Method of manufacturing flash memory device Feb. 8, 2011
7842570 Semiconductor memory devices and methods of manufacturing the same Nov. 30, 2010
7804125 System and method for reducing process-induced charging Sep. 28, 2010
7804123 Nonvolatile semiconductor memory Sep. 28, 2010
7795668 Semiconductor memory device with selective gate transistor Sep. 14, 2010
7791126 Non-volatile memory device Sep. 7, 2010
7749841 Method of fabricating nonvolatile semiconductor memory device Jul. 6, 2010
7723188 Non-volatile memory devices and methods of forming the same May. 25, 2010
7713819 Semiconductor device manufacturing method and semiconductor integrated circuit device May. 11, 2010
7709380 Method for gate electrode height control May. 4, 2010
7696074 Method of manufacturing NAND flash memory device Apr. 13, 2010
7666740 Nonvolatile semiconductor memory device to realize multi-bit cell and method for manufacturing the same Feb. 23, 2010
7638878 Devices and systems including the bit lines and bit line contacts Dec. 29, 2009
7635627 Methods for fabricating a memory device including a dual bit memory cell Dec. 22, 2009
7626864 Electrically alterable non-volatile memory cells and arrays Dec. 1, 2009
7618876 Semiconductor device and method of manufacturing the same by filling a trench which includes an additional coating step Nov. 17, 2009
7605036 Method of forming floating gate array of flash memory device Oct. 20, 2009
7595239 Method of fabricating flash memory device Sep. 29, 2009
7585755 Method of fabricating non-volatile memory device Sep. 8, 2009
7582559 Method of manufacturing a semiconductor device having voids in a polysilicon layer Sep. 1, 2009
7579246 Semiconductor device manufacturing method including oblique ion implantation process and reticle pattern forming method Aug. 25, 2009
7579237 Nonvolatile memory device and method of manufacturing the same Aug. 25, 2009
7572702 Split gate type non-volatile memory device Aug. 11, 2009
7566644 Method for forming gate electrode of semiconductor device Jul. 28, 2009
7563674 Method of manufacturing NAND flash memory device Jul. 21, 2009
7560764 SONOS memory device having curved surface and method for fabricating the same Jul. 14, 2009
7560340 Method of manufacturing flash memory device Jul. 14, 2009
7554150 Non-volatile memory device and method of manufacturing the same Jun. 30, 2009
7554149 Flash memory devices comprising pillar patterns and methods of fabricating the same Jun. 30, 2009
7541638 Symmetrical and self-aligned non-volatile memory structure Jun. 2, 2009
7511333 Nonvolatile memory cell with multiple floating gates and a connection region in the channel Mar. 31, 2009











 
 
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