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Class Information
Number: 257/E21.682
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components or integrated circuits formed in, or on, common substrate (epo) > With subsequent division of substrate into plural individual devices (epo) > To produce devices each consisting of plurality of components, e.g., integrated circuits (epo) > Substrate being semiconductor, using silicon technology (epo) > Field-effect technology (epo) > Mis technology (epo) > Dynamic random access memory structures (dram) (epo) > Read-only memory structures (rom), i.e., nonvolatile memory structures (epo) > Electrically programmable (eprom), i.e., floating gate memory structures (epo) > With conductive layer as control gate (epo) > With source and drain on same level and without cell select transistor (epo)
Description: This subclass is indented under subclass E21.681. This subclass is substantially the same in scope as ECLA classification H01L21/8247M2.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7618876 |
Semiconductor device and method of manufacturing the same by filling a trench which includes an additional coating step |
Nov. 17, 2009 |
| 7605036 |
Method of forming floating gate array of flash memory device |
Oct. 20, 2009 |
| 7595239 |
Method of fabricating flash memory device |
Sep. 29, 2009 |
| 7585755 |
Method of fabricating non-volatile memory device |
Sep. 8, 2009 |
| 7582559 |
Method of manufacturing a semiconductor device having voids in a polysilicon layer |
Sep. 1, 2009 |
| 7579246 |
Semiconductor device manufacturing method including oblique ion implantation process and reticle pattern forming method |
Aug. 25, 2009 |
| 7579237 |
Nonvolatile memory device and method of manufacturing the same |
Aug. 25, 2009 |
| 7572702 |
Split gate type non-volatile memory device |
Aug. 11, 2009 |
| 7566644 |
Method for forming gate electrode of semiconductor device |
Jul. 28, 2009 |
| 7563674 |
Method of manufacturing NAND flash memory device |
Jul. 21, 2009 |
| 7560764 |
SONOS memory device having curved surface and method for fabricating the same |
Jul. 14, 2009 |
| 7560340 |
Method of manufacturing flash memory device |
Jul. 14, 2009 |
| 7554150 |
Non-volatile memory device and method of manufacturing the same |
Jun. 30, 2009 |
| 7554149 |
Flash memory devices comprising pillar patterns and methods of fabricating the same |
Jun. 30, 2009 |
| 7541638 |
Symmetrical and self-aligned non-volatile memory structure |
Jun. 2, 2009 |
| 7511333 |
Nonvolatile memory cell with multiple floating gates and a connection region in the channel |
Mar. 31, 2009 |
| 7494871 |
Semiconductor memory devices and methods for forming the same |
Feb. 24, 2009 |
| 7494870 |
Methods of forming NAND memory with virtual channel |
Feb. 24, 2009 |
| 7489005 |
EEPROM |
Feb. 10, 2009 |
| 7488649 |
Method of manufacturing split gate type non-volatile memory device |
Feb. 10, 2009 |
| 7452773 |
Method of manufacturing a flash memory device |
Nov. 18, 2008 |
| 7449747 |
Semiconductor memory device |
Nov. 11, 2008 |
| 7445999 |
Fabricating method of a flash memory cell |
Nov. 4, 2008 |
| 7436019 |
Non-volatile memory cells shaped to increase coupling to word lines |
Oct. 14, 2008 |
| 7435654 |
Analog capacitor having at least three high-k dielectric layers, and method of fabricating the same |
Oct. 14, 2008 |
| 7432204 |
Wafer and the manufacturing and reclaiming methods thereof |
Oct. 7, 2008 |
| 7429766 |
Split gate type nonvolatile memory device |
Sep. 30, 2008 |
| 7423312 |
Apparatus and method for a memory array with shallow trench isolation regions between bit lines for increased process margins |
Sep. 9, 2008 |
| 7419870 |
Method of manufacturing a flash memory device |
Sep. 2, 2008 |
| 7416944 |
Flash EEPROM device and method for fabricating the same |
Aug. 26, 2008 |
| 7414281 |
Flash memory with high-K dielectric material between substrate and gate |
Aug. 19, 2008 |
| 7413953 |
Method of forming floating gate array of flash memory device |
Aug. 19, 2008 |
| 7410870 |
Methods of forming non-volatile memory devices and devices formed thereby |
Aug. 12, 2008 |
| 7410869 |
Method of manufacturing a semiconductor device |
Aug. 12, 2008 |
| 7390716 |
Method of manufacturing flash memory device |
Jun. 24, 2008 |
| 7368341 |
Semiconductor circuit arrangement with trench isolation and fabrication method |
May. 6, 2008 |
| 7361551 |
Method for making an integrated circuit having an embedded non-volatile memory |
Apr. 22, 2008 |
| 7355239 |
Fabrication of semiconductor device exhibiting reduced dielectric loss in isolation trenches |
Apr. 8, 2008 |
| 7354824 |
Fabrication method of non-volatile memory |
Apr. 8, 2008 |
| 7351630 |
Method of manufacturing flash memory device |
Apr. 1, 2008 |
| 7348242 |
Nonvolatile memory device and methods of fabricating the same |
Mar. 25, 2008 |
| 7315058 |
Semiconductor memory device having a floating gate |
Jan. 1, 2008 |
| 7307332 |
Semiconductor device and method for fabricating the same |
Dec. 11, 2007 |
| 7300843 |
Method of fabricating flash memory device |
Nov. 27, 2007 |
| 7297598 |
Process for erase improvement in a non-volatile memory device |
Nov. 20, 2007 |
| 7265015 |
Use of chlorine to fabricate trench dielectric in integrated circuits |
Sep. 4, 2007 |
| 7262456 |
Bit line structure and production method thereof |
Aug. 28, 2007 |
| 7229876 |
Method of fabricating memory |
Jun. 12, 2007 |
| 7196370 |
Nonvolatile semiconductor memory device having trench-type isolation region, and method of fabricating the same |
Mar. 27, 2007 |
| 7192833 |
Flash memory device and method of manufacturing the same |
Mar. 20, 2007 |
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