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Class Information
Number: 257/E21.682
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components or integrated circuits formed in, or on, common substrate (epo) > With subsequent division of substrate into plural individual devices (epo) > To produce devices each consisting of plurality of components, e.g., integrated circuits (epo) > Substrate being semiconductor, using silicon technology (epo) > Field-effect technology (epo) > Mis technology (epo) > Dynamic random access memory structures (dram) (epo) > Read-only memory structures (rom), i.e., nonvolatile memory structures (epo) > Electrically programmable (eprom), i.e., floating gate memory structures (epo) > With conductive layer as control gate (epo) > With source and drain on same level and without cell select transistor (epo)
Description: This subclass is indented under subclass E21.681. This subclass is substantially the same in scope as ECLA classification H01L21/8247M2.


Sub-classes under this class:

Class Number Class Name Patents
257/E21.683 Simultaneous fabrication of periphery and memory cells (epo) 85


Patents under this class:

Patent Number Title Of Patent Date Issued
7618876 Semiconductor device and method of manufacturing the same by filling a trench which includes an additional coating step Nov. 17, 2009
7605036 Method of forming floating gate array of flash memory device Oct. 20, 2009
7595239 Method of fabricating flash memory device Sep. 29, 2009
7585755 Method of fabricating non-volatile memory device Sep. 8, 2009
7582559 Method of manufacturing a semiconductor device having voids in a polysilicon layer Sep. 1, 2009
7579246 Semiconductor device manufacturing method including oblique ion implantation process and reticle pattern forming method Aug. 25, 2009
7579237 Nonvolatile memory device and method of manufacturing the same Aug. 25, 2009
7572702 Split gate type non-volatile memory device Aug. 11, 2009
7566644 Method for forming gate electrode of semiconductor device Jul. 28, 2009
7563674 Method of manufacturing NAND flash memory device Jul. 21, 2009
7560764 SONOS memory device having curved surface and method for fabricating the same Jul. 14, 2009
7560340 Method of manufacturing flash memory device Jul. 14, 2009
7554150 Non-volatile memory device and method of manufacturing the same Jun. 30, 2009
7554149 Flash memory devices comprising pillar patterns and methods of fabricating the same Jun. 30, 2009
7541638 Symmetrical and self-aligned non-volatile memory structure Jun. 2, 2009
7511333 Nonvolatile memory cell with multiple floating gates and a connection region in the channel Mar. 31, 2009
7494871 Semiconductor memory devices and methods for forming the same Feb. 24, 2009
7494870 Methods of forming NAND memory with virtual channel Feb. 24, 2009
7489005 EEPROM Feb. 10, 2009
7488649 Method of manufacturing split gate type non-volatile memory device Feb. 10, 2009
7452773 Method of manufacturing a flash memory device Nov. 18, 2008
7449747 Semiconductor memory device Nov. 11, 2008
7445999 Fabricating method of a flash memory cell Nov. 4, 2008
7436019 Non-volatile memory cells shaped to increase coupling to word lines Oct. 14, 2008
7435654 Analog capacitor having at least three high-k dielectric layers, and method of fabricating the same Oct. 14, 2008
7432204 Wafer and the manufacturing and reclaiming methods thereof Oct. 7, 2008
7429766 Split gate type nonvolatile memory device Sep. 30, 2008
7423312 Apparatus and method for a memory array with shallow trench isolation regions between bit lines for increased process margins Sep. 9, 2008
7419870 Method of manufacturing a flash memory device Sep. 2, 2008
7416944 Flash EEPROM device and method for fabricating the same Aug. 26, 2008
7414281 Flash memory with high-K dielectric material between substrate and gate Aug. 19, 2008
7413953 Method of forming floating gate array of flash memory device Aug. 19, 2008
7410870 Methods of forming non-volatile memory devices and devices formed thereby Aug. 12, 2008
7410869 Method of manufacturing a semiconductor device Aug. 12, 2008
7390716 Method of manufacturing flash memory device Jun. 24, 2008
7368341 Semiconductor circuit arrangement with trench isolation and fabrication method May. 6, 2008
7361551 Method for making an integrated circuit having an embedded non-volatile memory Apr. 22, 2008
7355239 Fabrication of semiconductor device exhibiting reduced dielectric loss in isolation trenches Apr. 8, 2008
7354824 Fabrication method of non-volatile memory Apr. 8, 2008
7351630 Method of manufacturing flash memory device Apr. 1, 2008
7348242 Nonvolatile memory device and methods of fabricating the same Mar. 25, 2008
7315058 Semiconductor memory device having a floating gate Jan. 1, 2008
7307332 Semiconductor device and method for fabricating the same Dec. 11, 2007
7300843 Method of fabricating flash memory device Nov. 27, 2007
7297598 Process for erase improvement in a non-volatile memory device Nov. 20, 2007
7265015 Use of chlorine to fabricate trench dielectric in integrated circuits Sep. 4, 2007
7262456 Bit line structure and production method thereof Aug. 28, 2007
7229876 Method of fabricating memory Jun. 12, 2007
7196370 Nonvolatile semiconductor memory device having trench-type isolation region, and method of fabricating the same Mar. 27, 2007
7192833 Flash memory device and method of manufacturing the same Mar. 20, 2007



 
 
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