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Class Information
Number: 257/E21.681
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components or integrated circuits formed in, or on, common substrate (epo) > With subsequent division of substrate into plural individual devices (epo) > To produce devices each consisting of plurality of components, e.g., integrated circuits (epo) > Substrate being semiconductor, using silicon technology (epo) > Field-effect technology (epo) > Mis technology (epo) > Dynamic random access memory structures (dram) (epo) > Read-only memory structures (rom), i.e., nonvolatile memory structures (epo) > Electrically programmable (eprom), i.e., floating gate memory structures (epo) > With conductive layer as control gate (epo)
Description: This subclass is indented under subclass E21.68. This subclass is substantially the same in scope as ECLA classification H01L21/8247M.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.682 With source and drain on same level and without cell select transistor (epo) 1,521
257/E21.69 With source and drain on same level and with cell select transistor (epo) 273
257/E21.692 With source and drain on different levels, e.g., sloping channel (epo) 42


Patents under this class:
1 2

Patent Number Title Of Patent Date Issued
8692310 Gate fringing effect based channel formation for semiconductor device Apr. 8, 2014
8673715 Memory device and method of fabricating thereof Mar. 18, 2014
8664712 Flash memory cell on SeOI having a second control gate buried under the insulating layer Mar. 4, 2014
8587036 Non-volatile memory and fabricating method thereof Nov. 19, 2013
8536639 I-shape floating gate for flash memory device and fabricating the same Sep. 17, 2013
8507971 Apparatus and method for a memory array with shallow trench isolation regions between bit lines for increased process margins Aug. 13, 2013
8445347 3D vertical NAND and method of making thereof by front and back side processing May. 21, 2013
8441009 Semiconductor device and manufacturing method thereof May. 14, 2013
8334180 Flash memory cell arrays having dual control gates per memory cell charge storage element Dec. 18, 2012
8293617 Gap processing Oct. 23, 2012
8273665 Nonvolatile memory device using semiconductor nanocrystals and method forming same Sep. 25, 2012
8247292 Nonvolative memory device using semiconductor nanocrystals and method of forming same Aug. 21, 2012
8247862 Method of enhancing charge storage in an E.sup.2PROM cell Aug. 21, 2012
8193576 Semiconductor memory device and method of fabricating the same Jun. 5, 2012
8183110 Memory cells, methods of forming dielectric materials, and methods of forming memory cells May. 22, 2012
8133783 Semiconductor device having different structures formed simultaneously Mar. 13, 2012
8129242 Method of manufacturing a memory device Mar. 6, 2012
8097507 Method of fabricating a semiconductor device Jan. 17, 2012
8076712 Semiconductor memory comprising dual charge storage nodes and methods for its fabrication Dec. 13, 2011
8076198 Method of fabricating nonvolatile memory device Dec. 13, 2011
8058138 Gap processing Nov. 15, 2011
8048738 Method for forming a split gate device Nov. 1, 2011
8017480 Apparatus and associated method for making a floating gate cell in a virtual ground array Sep. 13, 2011
7985686 Method of forming a nonvolatile memory device using semiconductor nanoparticles Jul. 26, 2011
7982262 NAND memory device with inversion bit lines Jul. 19, 2011
7968406 Memory cells, methods of forming dielectric materials, and methods of forming memory cells Jun. 28, 2011
7960266 Spacer patterns using assist layer for high density semiconductor devices Jun. 14, 2011
7951669 Methods of making flash memory cell arrays having dual control gates per memory cell charge storage element May. 31, 2011
7948019 Nonvolatile memory devices and methods of operating the same May. 24, 2011
7838362 Method of making an embedded trap direct tunnel non-volatile memory Nov. 23, 2010
7808031 Method of fabricating a semiconductor device with a trench isolation structure and resulting semiconductor device Oct. 5, 2010
7795091 Method of forming a split gate memory device and apparatus Sep. 14, 2010
7795667 Semiconductor memory preventing an electric short circuit between a word line and a semiconductor substrate, and manufacturing method for the semiconductor memory Sep. 14, 2010
7785966 Method for fabricating floating gates structures with reduced and more uniform forward tunneling voltages Aug. 31, 2010
7773403 Spacer patterns using assist layer for high density semiconductor devices Aug. 10, 2010
7772068 Method of manufacturing non-volatile memory Aug. 10, 2010
7767517 Semiconductor memory comprising dual charge storage nodes and methods for its fabrication Aug. 3, 2010
7768056 Isolated-nitride-region non-volatile memory cell and fabrication method Aug. 3, 2010
7755134 Nonvolatile semiconductor memory device Jul. 13, 2010
7736973 Non-volatile memory arrays having dual control gate cell structures and a thick control gate dielectric and methods of forming Jun. 15, 2010
7732278 Split gate memory cell and method therefor Jun. 8, 2010
7723188 Non-volatile memory devices and methods of forming the same May. 25, 2010
7718491 Method for making a NAND Memory device with inversion bit lines May. 18, 2010
7719046 Apparatus and method for trench transistor memory having different gate dielectric thickness May. 18, 2010
7718488 Process of fabricating flash memory with enhanced program and erase coupling May. 18, 2010
7696035 Method for fabricating non-volatile memory with boost structures Apr. 13, 2010
7687349 Growth of silicon nanodots having a metallic coating using gaseous precursors Mar. 30, 2010
7687360 Method of forming spaced-apart charge trapping stacks Mar. 30, 2010
7638391 Semiconductor memory device and fabrication method thereof Dec. 29, 2009
7608884 Scalable split-gate flash memory cell with high source-coupling ratio Oct. 27, 2009

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