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Class Information
Number: 257/E21.674
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components or integrated circuits formed in, or on, common substrate (epo) > With subsequent division of substrate into plural individual devices (epo) > To produce devices each consisting of plurality of components, e.g., integrated circuits (epo) > Substrate being semiconductor, using silicon technology (epo) > Field-effect technology (epo) > Mis technology (epo) > Dynamic random access memory structures (dram) (epo) > Read-only memory structures (rom), i.e., nonvolatile memory structures (epo) > Rom only (epo) > With source and drain on same level, e.g., lateral channel (epo) > Gate programmed, e.g., different gate material or no gate (epo)
Description: This subclass is indented under subclass E21.668. This subclass is substantially the same in scope as ECLA classification H01L21/8246R2G.










Patents under this class:

Patent Number Title Of Patent Date Issued
8076729 Semiconductor device having a dual gate electrode and methods of making the same Dec. 13, 2011
7015553 Compact mask programmable ROM Mar. 21, 2006
6955966 Method of manufacturing non-volatile read only memory Oct. 18, 2005
6856533 Method of modulating threshold voltage of a mask ROM Feb. 15, 2005
6798680 Read-only MOS memory Sep. 28, 2004
6780710 Method of manufacturing non-volatile read only memory Aug. 24, 2004
6724055 Semiconductor structure having an interconnect and method of producing the semiconductor structure Apr. 20, 2004
6487119 Non-volatile read only memory and its manufacturing method Nov. 26, 2002
6417548 Variable work function transistor high density mask ROM Jul. 9, 2002
6211014 Three-dimensional, deep-trench, high-density read-only memory (ROM) and its manufacturing method Apr. 3, 2001
6180463 Method for fabricating a multi-level mask ROM Jan. 30, 2001
6018186 Three-dimensional, deep-trench, high-density read-only memory (ROM) and its manufacturing method Jan. 25, 2000
5786253 Method of making a multi-level ROM device Jul. 28, 1998
5668029 Process for fabricating multi-level read-only memory device Sep. 16, 1997
5633187 Process for fabricating read-only memory cells May. 27, 1997
4384399 Method of making a metal programmable MOS read only memory device May. 24, 1983
4096522 Monolithic semiconductor mask programmable ROM and a method for manufacturing the same Jun. 20, 1978











 
 
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