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Class Information
Number: 257/E21.669
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components or integrated circuits formed in, or on, common substrate (epo) > With subsequent division of substrate into plural individual devices (epo) > To produce devices each consisting of plurality of components, e.g., integrated circuits (epo) > Substrate being semiconductor, using silicon technology (epo) > Field-effect technology (epo) > Mis technology (epo) > Dynamic random access memory structures (dram) (epo) > Read-only memory structures (rom), i.e., nonvolatile memory structures (epo) > Rom only (epo) > With source and drain on same level, e.g., lateral channel (epo) > Source or drain contact programmed (epo)
Description: This subclass is indented under subclass E21.668. This subclass is substantially the same in scope as ECLA classification H01L21/8246R2B.










Patents under this class:

Patent Number Title Of Patent Date Issued
8003971 Integrated circuit including memory element doped with dielectric material Aug. 23, 2011
7915688 Semiconductor device with MISFET Mar. 29, 2011
7514756 Semiconductor device with MISFET Apr. 7, 2009
7015553 Compact mask programmable ROM Mar. 21, 2006
6933217 Method for forming a ROM coding in a semiconductor device Aug. 23, 2005
6906942 Programmable mask ROM building element and process of manufacture Jun. 14, 2005
6841827 Semiconductor memory device Jan. 11, 2005
6826070 Read only memory(ROM) cell, program method of ROM cell, layout method of ROM cell, and ROM device comprising ROM cell Nov. 30, 2004
6806142 Method for coding semiconductor permanent store ROM Oct. 19, 2004
6800524 Method of manufacturing semiconductor integrated circuit device Oct. 5, 2004
6727145 Method for fabricating post-process one-time programmable read only memory cell Apr. 27, 2004
6614080 Mask programmed ROM inviolable by reverse engineering inspections and method of fabrication Sep. 2, 2003
6569714 Method and apparatus for a dense metal programmable ROM May. 27, 2003
6570236 Semiconductor device May. 27, 2003
6542396 Method and apparatus for a dense metal programmable ROM Apr. 1, 2003
6525954 Method and apparatus for a dense metal programmable ROM Feb. 25, 2003
6500714 Method and structure for manufacturing ROMs in a semiconductor process Dec. 31, 2002
6498066 Ultra-late programming ROM and method of manufacture Dec. 24, 2002
6355550 Ultra-late programming ROM and method of manufacture Mar. 12, 2002
6304480 Read only memory integrated semiconductor device Oct. 16, 2001
6015994 Semiconductor memory device and manufacturing method thereof Jan. 18, 2000
5963812 Manufacturing method of a semiconductor apparatus having an electron donative surface in a side wall portion Oct. 5, 1999
5804484 Method of fabricating multi-stage read-only memory semiconductor structural configuration Sep. 8, 1998
5624862 Method of making a mask ROM with a groove Apr. 29, 1997
5580808 Method of manufacturing a ROM device having contact holes treated with hydrogen atoms and energy beam Dec. 3, 1996
5569614 Method of forming metal pattern including a schottky diode Oct. 29, 1996
5539235 Metal programmed transistor array Jul. 23, 1996
5527730 Method of forming a capacitor having contact hole treated with hydrogen atoms and energy beam Jun. 18, 1996
5323048 MIS type semiconductor ROM programmed by conductive interconnects Jun. 21, 1994
5164814 Semiconductor device with customized wiring Nov. 17, 1992
4855248 Method of making a semiconductor ROM device Aug. 8, 1989
4755864 Semiconductor read only memory device with selectively present mask layer Jul. 5, 1988
4737835 Read only memory semiconductor device Apr. 12, 1988
4406049 Very high density cells comprising a ROM and method of manufacturing same Sep. 27, 1983











 
 
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