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Class Information
Number: 257/E21.669
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components or integrated circuits formed in, or on, common substrate (epo) > With subsequent division of substrate into plural individual devices (epo) > To produce devices each consisting of plurality of components, e.g., integrated circuits (epo) > Substrate being semiconductor, using silicon technology (epo) > Field-effect technology (epo) > Mis technology (epo) > Dynamic random access memory structures (dram) (epo) > Read-only memory structures (rom), i.e., nonvolatile memory structures (epo) > Rom only (epo) > With source and drain on same level, e.g., lateral channel (epo) > Source or drain contact programmed (epo)
Description: This subclass is indented under subclass E21.668. This subclass is substantially the same in scope as ECLA classification H01L21/8246R2B.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7514756 |
Semiconductor device with MISFET |
Apr. 7, 2009 |
| 7015553 |
Compact mask programmable ROM |
Mar. 21, 2006 |
| 6933217 |
Method for forming a ROM coding in a semiconductor device |
Aug. 23, 2005 |
| 6906942 |
Programmable mask ROM building element and process of manufacture |
Jun. 14, 2005 |
| 6841827 |
Semiconductor memory device |
Jan. 11, 2005 |
| 6826070 |
Read only memory(ROM) cell, program method of ROM cell, layout method of ROM cell, and ROM device comprising ROM cell |
Nov. 30, 2004 |
| 6806142 |
Method for coding semiconductor permanent store ROM |
Oct. 19, 2004 |
| 6800524 |
Method of manufacturing semiconductor integrated circuit device |
Oct. 5, 2004 |
| 6727145 |
Method for fabricating post-process one-time programmable read only memory cell |
Apr. 27, 2004 |
| 6614080 |
Mask programmed ROM inviolable by reverse engineering inspections and method of fabrication |
Sep. 2, 2003 |
| 6569714 |
Method and apparatus for a dense metal programmable ROM |
May. 27, 2003 |
| 6570236 |
Semiconductor device |
May. 27, 2003 |
| 6542396 |
Method and apparatus for a dense metal programmable ROM |
Apr. 1, 2003 |
| 6525954 |
Method and apparatus for a dense metal programmable ROM |
Feb. 25, 2003 |
| 6500714 |
Method and structure for manufacturing ROMs in a semiconductor process |
Dec. 31, 2002 |
| 6498066 |
Ultra-late programming ROM and method of manufacture |
Dec. 24, 2002 |
| 6355550 |
Ultra-late programming ROM and method of manufacture |
Mar. 12, 2002 |
| 6304480 |
Read only memory integrated semiconductor device |
Oct. 16, 2001 |
| 6015994 |
Semiconductor memory device and manufacturing method thereof |
Jan. 18, 2000 |
| 5963812 |
Manufacturing method of a semiconductor apparatus having an electron donative surface in a side wall portion |
Oct. 5, 1999 |
| 5804484 |
Method of fabricating multi-stage read-only memory semiconductor structural configuration |
Sep. 8, 1998 |
| 5624862 |
Method of making a mask ROM with a groove |
Apr. 29, 1997 |
| 5580808 |
Method of manufacturing a ROM device having contact holes treated with hydrogen atoms and energy beam |
Dec. 3, 1996 |
| 5569614 |
Method of forming metal pattern including a schottky diode |
Oct. 29, 1996 |
| 5539235 |
Metal programmed transistor array |
Jul. 23, 1996 |
| 5527730 |
Method of forming a capacitor having contact hole treated with hydrogen atoms and energy beam |
Jun. 18, 1996 |
| 5323048 |
MIS type semiconductor ROM programmed by conductive interconnects |
Jun. 21, 1994 |
| 5164814 |
Semiconductor device with customized wiring |
Nov. 17, 1992 |
| 4855248 |
Method of making a semiconductor ROM device |
Aug. 8, 1989 |
| 4755864 |
Semiconductor read only memory device with selectively present mask layer |
Jul. 5, 1988 |
| 4737835 |
Read only memory semiconductor device |
Apr. 12, 1988 |
| 4406049 |
Very high density cells comprising a ROM and method of manufacturing same |
Sep. 27, 1983 |
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