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Class Information
Number: 257/E21.667
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components or integrated circuits formed in, or on, common substrate (epo) > With subsequent division of substrate into plural individual devices (epo) > To produce devices each consisting of plurality of components, e.g., integrated circuits (epo) > Substrate being semiconductor, using silicon technology (epo) > Field-effect technology (epo) > Mis technology (epo) > Dynamic random access memory structures (dram) (epo) > Read-only memory structures (rom), i.e., nonvolatile memory structures (epo) > Rom only (epo)
Description: This subclass is indented under subclass E21.662. This subclass is substantially the same in scope as ECLA classification H01L21/8246R.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.678 Simultaneous fabrication of periphery and memory cells (epo) 49
257/E21.677 With fets on different levels, e.g., 3d rom (epo) 22
257/E21.676 With source and drain on different levels, e.g., vertical channel (epo) 56
257/E21.668 With source and drain on same level, e.g., lateral channel (epo) 31


Patents under this class:

Patent Number Title Of Patent Date Issued
8687432 Multi-bit resistive-switching memory cell and array Apr. 1, 2014
8563403 Three dimensional integrated circuit integration using alignment via/dielectric bonding first and through via formation last Oct. 22, 2013
8415218 Atomic layer deposition epitaxial silicon growth for TFT flash memory cell Apr. 9, 2013
8293601 Method of manufacturing a non-volatile semiconductor storage device Oct. 23, 2012
8212231 Resistive memory device with an air gap Jul. 3, 2012
8106463 Memory cells for read only memories Jan. 31, 2012
7977749 Semiconductor device with increased channel area Jul. 12, 2011
7977196 Semiconductor device with increased channel area and fabrication method thereof Jul. 12, 2011
7728320 Semiconductor memory device and phase change memory device Jun. 1, 2010
7687377 Method of fabricating phase change memory device Mar. 30, 2010
7655569 Method of manufacturing semiconductor device Feb. 2, 2010
7638387 Mask ROM and method of fabricating the same Dec. 29, 2009
7279418 Plastically deformable irreversible storage medium and method of producing one such medium Oct. 9, 2007
7030456 Resistance-changing function body, memory element, manufacturing method therefor, memory device, semiconductor device and electronic equipment Apr. 18, 2006
6887650 TRANSFER METHOD, METHOD OF MANUFACTURING THIN FILM DEVICES, METHOD OF MANUFACTURING INTEGRATED CIRCUITS, CIRCUIT BOARD AND MANUFACTURING METHOD THEREOF, ELECTRO-OPTICAL APPARATUS AND MANUFACTU May. 3, 2005
6852611 ROM embedded DRAM with dielectric removal/short Feb. 8, 2005
6665207 ROM embedded DRAM with dielectric removal/short Dec. 16, 2003
6646312 Semiconductor memory device with bit lines having reduced cross-talk Nov. 11, 2003
6620693 Non-volatile memory and fabrication thereof Sep. 16, 2003
6410385 ROM-embedded-DRAM Jun. 25, 2002
6243285 ROM-embedded-DRAM Jun. 5, 2001
6134137 Rom-embedded-DRAM Oct. 17, 2000
6008522 Structure of buried bit line Dec. 28, 1999
5882972 Method of fabricating a buried bit line Mar. 16, 1999
5604143 Method for producing nonvolatile memory used as read-only storage media Feb. 18, 1997











 
 
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