Resources Contact Us Home
Browse by Category: Main > Physics
Class Information
Number: 257/E21.666
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components or integrated circuits formed in, or on, common substrate (epo) > With subsequent division of substrate into plural individual devices (epo) > To produce devices each consisting of plurality of components, e.g., integrated circuits (epo) > Substrate being semiconductor, using silicon technology (epo) > Field-effect technology (epo) > Mis technology (epo) > Dynamic random access memory structures (dram) (epo) > Read-only memory structures (rom), i.e., nonvolatile memory structures (epo) > Prom (epo)
Description: This subclass is indented under subclass E21.662. This subclass is substantially the same in scope as ECLA classification H01L21/8246P.

Patents under this class:

Patent Number Title Of Patent Date Issued
8673717 Self-aligned process to fabricate a memory cell array with a surrounding-gate access transistor Mar. 18, 2014
8350308 Reverse engineering resistant read only memory Jan. 8, 2013
8243492 One time programmable memory device and manufacturing method of one time programmable memory device Aug. 14, 2012
8212231 Resistive memory device with an air gap Jul. 3, 2012
7902048 Method of forming a phase change layer and method of manufacturing a storage node having the phase change layer Mar. 8, 2011
7898039 Non-volatile memory devices including double diffused junction regions Mar. 1, 2011
7808054 OTP memory cell, OTP memory, and method of manufacturing OTP memory cell Oct. 5, 2010
7800155 Semiconductor device Sep. 21, 2010
7795094 Recessed gate dielectric antifuse Sep. 14, 2010
7692252 EEPROM array with well contacts Apr. 6, 2010
7629638 Semiconductor memory device and manufacturing method thereof Dec. 8, 2009
6956258 Reprogrammable non-volatile memory using a breakdown phenomena in an ultra-thin dielectric Oct. 18, 2005
6902958 Method for making MOSFET anti-fuse structure Jun. 7, 2005
6897543 Electrically-programmable integrated circuit antifuses May. 24, 2005
6838727 Memory device using a transistor and one resistant element for storage Jan. 4, 2005
6766960 Smart card having memory using a breakdown phenomena in an ultra-thin dielectric Jul. 27, 2004
6700176 MOSFET anti-fuse structure and method for making same Mar. 2, 2004
6700151 Reprogrammable non-volatile memory using a breakdown phenomena in an ultra-thin dielectric Mar. 2, 2004
6674661 Dense metal programmable ROM with the terminals of a programmed memory transistor being shorted together Jan. 6, 2004
6518614 Embedded one-time programmable non-volatile memory using prompt shift device Feb. 11, 2003
6413812 Methods for forming ZPROM using spacers as an etching mask Jul. 2, 2002
6392930 Method of manufacturing mask read-only memory cell May. 21, 2002
6327174 Method of manufacturing mask read-only memory cell Dec. 4, 2001
6306689 Anti-fuse for programming redundancy cell, repair circuit having programming apparatus, and fabrication method of anti-fuse Oct. 23, 2001
6043121 Method for fabricating an one-time programmable read only memory Mar. 28, 2000
6034890 Semiconductor nonvolatile memory device and method of writing thereto Mar. 7, 2000
5886392 One-time programmable element having controlled programmed state resistance Mar. 23, 1999
5851882 ZPROM manufacture and design and methods for forming thin structures using spacers as an etching mask Dec. 22, 1998
5821558 Antifuse structures Oct. 13, 1998
5783467 Method of making antifuse structures using implantation of both neutral and dopant species Jul. 21, 1998
5391518 Method of making a field programmable read only memory (ROM) cell using an amorphous silicon fuse with buried contact polysilicon and metal electrodes Feb. 21, 1995
5286993 One-sided ozone TEOS spacer Feb. 15, 1994
5208177 Local field enhancement for better programmability of antifuse PROM May. 4, 1993
5126290 Method of making memory devices utilizing one-sided ozone teos spacers Jun. 30, 1992
4933736 Programmable read-only memory Jun. 12, 1990
4922319 Semiconductor programmable memory device May. 1, 1990
4727409 Programmable read-only memory formed with opposing PN diodes Feb. 23, 1988
4694566 Method for manufacturing programmable read-only memory containing cells formed with opposing diodes Sep. 22, 1987
4569121 Method of fabricating a programmable read-only memory cell incorporating an antifuse utilizing deposition of amorphous semiconductor layer Feb. 11, 1986
4500899 Semiconductor memory device and process for producing the same Feb. 19, 1985
4196228 Fabrication of high resistivity semiconductor resistors by ion implanatation Apr. 1, 1980
4146902 Irreversible semiconductor switching element and semiconductor memory device utilizing the same Mar. 27, 1979

  Recently Added Patents
Cooking device and method of manufacture of the same
Polypeptides and immunizing compositions containing gram positive polypeptides and methods of use
Audio signal clip detection
Light-emitting device with a spacer at bottom surface
Method for the treatment, alleviation of symptoms of, relieving, improving and preventing a cognitive disease, disorder or condition
Imaging apparatus for calculating a histogram to adjust color balance
Mass spectrometry method
  Randomly Featured Patents
Optimizing the operation of an equipment control system using one or more servers
Fire suppression apparatus and method for generating foam
Electronically controlled, programmable dispenser for medications
Rear of a purse
Delta grinder
Washable child car seat subframe
Construction of encased pipelines
Automatic fluid compress and circulating system
Power converter designed to enhance stability in operation
Connector with a safety shut-off feature