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Class Information
Number: 257/E21.665
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components or integrated circuits formed in, or on, common substrate (epo) > With subsequent division of substrate into plural individual devices (epo) > To produce devices each consisting of plurality of components, e.g., integrated circuits (epo) > Substrate being semiconductor, using silicon technology (epo) > Field-effect technology (epo) > Mis technology (epo) > Dynamic random access memory structures (dram) (epo) > Read-only memory structures (rom), i.e., nonvolatile memory structures (epo) > Magnetic nonvolatile memory structures, e.g., mram (epo)
Description: This subclass is indented under subclass E21.662. This subclass is substantially the same in scope as ECLA classification H01L21/8246M.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8710602 Method and system for providing magnetic junctions having improved characteristics Apr. 29, 2014
8704319 Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories Apr. 22, 2014
8685756 Method for manufacturing and magnetic devices having double tunnel barriers Apr. 1, 2014
8687414 Magnetic memory element and magnetic random access memory Apr. 1, 2014
8681536 Magnetic tunnel junction (MTJ) on planarized electrode Mar. 25, 2014
8673654 Underlayer for high performance magnetic tunneling junction MRAM Mar. 18, 2014
8664010 Semiconductor device and manufacturing method of the semiconductor device Mar. 4, 2014
8652856 Method for use in making electronic devices having thin-film magnetic components Feb. 18, 2014
8647891 Two-axis magnetic field sensor having reduced compensation angle for zero offset Feb. 11, 2014
8644063 Fabrication and integration of devices with top and bottom electrodes including magnetic tunnel junctions Feb. 4, 2014
8619467 High GMR structure with low drive fields Dec. 31, 2013
8609262 Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM application Dec. 17, 2013
8604572 Magnetic tunnel junction device Dec. 10, 2013
8592927 Multilayers having reduced perpendicular demagnetizing field using moment dilution for spintronic applications Nov. 26, 2013
8587043 Magnetoresistive random access memory and method of manufacturing the same Nov. 19, 2013
8581346 Semiconductor memory device Nov. 12, 2013
8574927 Magnetic tunnel junction device and its fabricating method Nov. 5, 2013
8558332 Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element Oct. 15, 2013
8557610 Methods of integrated shielding into MTJ device for MRAM Oct. 15, 2013
8546263 Method of patterning of magnetic tunnel junctions Oct. 1, 2013
8542519 Semiconductor memory device Sep. 24, 2013
8535952 Method for manufacturing non-volatile magnetic memory Sep. 17, 2013
8535953 Process for selectively patterning a magnetic film structure Sep. 17, 2013
8536669 Magnetic element with storage layer materials Sep. 17, 2013
8524510 Method for manufacturing magnetic memory chip device Sep. 3, 2013
8519376 Nonvolatile resistive memory devices Aug. 27, 2013
8519497 Template-registered diblock copolymer mask for MRAM device formation Aug. 27, 2013
8502331 Magnetoresistive effect element, magnetic memory Aug. 6, 2013
8497544 Repairing defects in a nonvolatile semiconductor memory module utilizing a heating element Jul. 30, 2013
8497559 MRAM with means of controlling magnetic anisotropy Jul. 30, 2013
8487390 Memory cell with stress-induced anisotropy Jul. 16, 2013
8476721 Magnet-assisted transistor devices Jul. 2, 2013
8477531 Spin torque transfer magnetoresistive random access memory in disk base with reduced threshold current Jul. 2, 2013
8455267 Magnetic tunnel junction device and fabrication Jun. 4, 2013
8455965 Fabrication and integration of devices with top and bottom electrodes including magnetic tunnel junctions Jun. 4, 2013
8456883 Method of spin torque MRAM process integration Jun. 4, 2013
8450119 Magnetic tunnel junction patterning using Ta/TaN as hard mask May. 28, 2013
8440471 Low-cost non-volatile flash-RAM memory May. 14, 2013
8436437 High performance MTJ elements for STT-RAM and method for making the same May. 7, 2013
8431418 Method of manufacturing magnetic tunnel junction device and apparatus for manufacturing the same Apr. 30, 2013
8432009 Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories Apr. 30, 2013
8420236 Magnetic semiconductor material Apr. 16, 2013
8420407 Growth method of Fe.sub.3N material Apr. 16, 2013
8421137 Magnetic random access memory Apr. 16, 2013
8421138 Magnetic tunneling junction device with recessed magnetic free layer Apr. 16, 2013
8421148 Grid-UMOSFET with electric field shielding of gate oxide Apr. 16, 2013
8415755 Wheatstone-bridge magnetoresistive device Apr. 9, 2013
8410529 Magnetic random access memory and method of fabricating the same Apr. 2, 2013
8405174 Non-volatile magnetic memory with low switching current and high thermal stability Mar. 26, 2013
8399942 Non-volatile magnetic memory element with graded layer Mar. 19, 2013

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