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Class Information
Number: 257/E21.661
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components or integrated circuits formed in, or on, common substrate (epo) > With subsequent division of substrate into plural individual devices (epo) > To produce devices each consisting of plurality of components, e.g., integrated circuits (epo) > Substrate being semiconductor, using silicon technology (epo) > Field-effect technology (epo) > Mis technology (epo) > Dynamic random access memory structures (dram) (epo) > Static random access memory structures (sram) (epo)
Description: This subclass is indented under subclass E21.645. This subclass is substantially the same in scope as ECLA classification H01L21/8244.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 6265746 |
Highly resistive interconnects |
Jul. 24, 2001 |
| 6258708 |
Method of fabricating gate contact pods, load lines and wiring structures using a minimum number of etching steps |
Jul. 10, 2001 |
| 6251714 |
Method of making thin film field effect transistors |
Jun. 26, 2001 |
| 6245627 |
Method of fabricating a load resistor for an SRAM |
Jun. 12, 2001 |
| 6242806 |
Semiconductor device and method of manufacturing thereof |
Jun. 5, 2001 |
| 6242297 |
Semiconductor device having an improved interconnection and method for fabricating the same |
Jun. 5, 2001 |
| 6242781 |
Resistor constructions |
Jun. 5, 2001 |
| 6243286 |
Semiconductor memory device and method of fabricating the same |
Jun. 5, 2001 |
| 6239458 |
Polysilicon-via structure for four transistor, triple polysilicon layer SRAM cell including two polysilicon layer load resistor |
May. 29, 2001 |
| 6238962 |
Method of fabricating static random access memory cell with vertically arranged drive transistors |
May. 29, 2001 |
| 6235562 |
Method of making field effect transistors |
May. 22, 2001 |
| 6235570 |
Method for fabricating a semiconductor device |
May. 22, 2001 |
| 6236117 |
Semiconductor memory device including shunt interconnection |
May. 22, 2001 |
| 6232195 |
Structure of semiconductor device |
May. 15, 2001 |
| 6232194 |
Silicon nitride capped poly resistor with SAC process |
May. 15, 2001 |
| 6229212 |
Integrated circuitry and thin film transistors |
May. 8, 2001 |
| 6229186 |
Semiconductor memory device using inverter configuration |
May. 8, 2001 |
| 6229161 |
Semiconductor capacitively-coupled NDR device and its applications in high-density high-speed memories and in power switches |
May. 8, 2001 |
| 6228731 |
Re-etched spacer process for a self-aligned structure |
May. 8, 2001 |
| 6222753 |
SRAM cell arrangement and method for manufacturing same |
Apr. 24, 2001 |
| 6215141 |
Semiconductor device including a transistor having portions of source and drain regions removed by the same amount |
Apr. 10, 2001 |
| 6215161 |
Insulator structure for polysilicon resistors |
Apr. 10, 2001 |
| 6214676 |
Embedded memory logic device using self-aligned silicide and manufacturing method therefor |
Apr. 10, 2001 |
| 6211556 |
Eliminating buried contact trench in MOSFET devices having self-aligned silicide |
Apr. 3, 2001 |
| 6211004 |
Semiconductor integrated circuit device and process for manufacturing the same |
Apr. 3, 2001 |
| 6207539 |
Semiconductor device having field isolating film of which upper surface is flat and method thereof |
Mar. 27, 2001 |
| 6204518 |
SRAM cell and its fabrication process |
Mar. 20, 2001 |
| 6204538 |
SRAM cell |
Mar. 20, 2001 |
| 6201267 |
Compact low power complement FETs |
Mar. 13, 2001 |
| 6198173 |
SRAM with improved Beta ratio |
Mar. 6, 2001 |
| 6197629 |
Method of fabricating a polysilicon-based load circuit for static random-access memory |
Mar. 6, 2001 |
| 6194775 |
Semiconductor element with thermally nitrided film on high resistance film and method of manufacturing the same |
Feb. 27, 2001 |
| 6194765 |
Integrated electrical circuit having at least one memory cell and method for fabricating it |
Feb. 27, 2001 |
| 6191460 |
Identical gate conductivity type static random access memory cell |
Feb. 20, 2001 |
| 6191990 |
Semiconductor integrated circuit device having stabilizing capacitors connected between power lines of main amplifiers |
Feb. 20, 2001 |
| 6188112 |
High impedance load for integrated circuit devices |
Feb. 13, 2001 |
| 6184588 |
SRAM cell having bit line shorter than word line |
Feb. 6, 2001 |
| 6184103 |
High resistance polysilicon SRAM load elements and methods of fabricating therefor |
Feb. 6, 2001 |
| 6184073 |
Process for forming a semiconductor device having an interconnect or conductive film electrically insulated from a conductive member or region |
Feb. 6, 2001 |
| 6180986 |
Semiconductor device and method of manufacturing the same |
Jan. 30, 2001 |
| 6180530 |
Self-aligned contact structure |
Jan. 30, 2001 |
| 6178110 |
Static semiconductor memory device capable of enhancing access speed |
Jan. 23, 2001 |
| 6177300 |
Memory with storage cells having SOI drive and access transistors with tied floating body connections |
Jan. 23, 2001 |
| 6174764 |
Process for manufacturing integrated circuit SRAM |
Jan. 16, 2001 |
| 6175138 |
Semiconductor memory device and method of manufacturing the same |
Jan. 16, 2001 |
| 6174763 |
Three-dimensional SRAM trench structure and fabrication method therefor |
Jan. 16, 2001 |
| 6171892 |
Method of manufacturing a semiconductor integrated circuit device |
Jan. 9, 2001 |
| 6169313 |
Static semiconductor memory device |
Jan. 2, 2001 |
| 6165900 |
Method for manufacturing semiconductor device |
Dec. 26, 2000 |
| 6166447 |
Semiconductor memory device having first and second voltage level shifters |
Dec. 26, 2000 |
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