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Class Information
Number: 257/E21.661
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components or integrated circuits formed in, or on, common substrate (epo) > With subsequent division of substrate into plural individual devices (epo) > To produce devices each consisting of plurality of components, e.g., integrated circuits (epo) > Substrate being semiconductor, using silicon technology (epo) > Field-effect technology (epo) > Mis technology (epo) > Dynamic random access memory structures (dram) (epo) > Static random access memory structures (sram) (epo)
Description: This subclass is indented under subclass E21.645. This subclass is substantially the same in scope as ECLA classification H01L21/8244.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 5757053 |
Effective load length increase by topography |
May. 26, 1998 |
| 5757083 |
Drain off-set for pull down transistor for low leakage SRAM's |
May. 26, 1998 |
| 5754467 |
Semiconductor integrated circuit device and process for manufacturing the same |
May. 19, 1998 |
| 5751044 |
Manufacture device of four transistor sram cell layout and device |
May. 12, 1998 |
| 5751046 |
Semiconductor device with V.sub.T implant |
May. 12, 1998 |
| 5751035 |
Semiconductor device provided with LDD transistors |
May. 12, 1998 |
| 5751640 |
Semiconductor memory device and method thereof |
May. 12, 1998 |
| 5744846 |
SRAM cell employing substantially vertically elongated pull-up resistors and methods of making, and resistor constructions and methods of making |
Apr. 28, 1998 |
| 5744866 |
Low resistance ground wiring in a semiconductor device |
Apr. 28, 1998 |
| 5741735 |
Local ground and V.sub.CC connection in an SRAM cell |
Apr. 21, 1998 |
| 5739056 |
Semiconductor processing method of forming a static random access memory cell and static random access memory cell |
Apr. 14, 1998 |
| 5739564 |
Semiconductor device having a static-random-access memory cell |
Apr. 14, 1998 |
| 5736437 |
Method of fabricating a bottom and top gated thin film transistor having an electrical sidewall connection |
Apr. 7, 1998 |
| 5736438 |
Field effect thin-film transistor and method of manufacturing the same as well as semiconductor device provided with the same |
Apr. 7, 1998 |
| 5731618 |
Semiconductor device and method of manufacturing thereof |
Mar. 24, 1998 |
| 5728598 |
Method of manufacturing a SRAM cell having a low stand-by current |
Mar. 17, 1998 |
| 5728615 |
Method of manufacturing a polysilicon resistor having uniform resistance |
Mar. 17, 1998 |
| 5729055 |
Integrated circuitry having a thin film polysilicon layer in ohmic contact with a conductive layer |
Mar. 17, 1998 |
| 5721166 |
Method to increase the resistance of a polysilicon load resistor, in an SRAM cell |
Feb. 24, 1998 |
| 5721167 |
Process for forming a semiconductor device and a static-random-access memory cell |
Feb. 24, 1998 |
| 5721163 |
Method of manufacture of thin film transistor SRAM device with a titanium nitride or silicide gate |
Feb. 24, 1998 |
| 5721146 |
Method of forming buried contact architecture within a trench |
Feb. 24, 1998 |
| 5719079 |
Method of making a semiconductor device having high density 4T SRAM in logic with salicide process |
Feb. 17, 1998 |
| 5716881 |
Process to fabricate stacked capacitor DRAM and low power thin film transistor SRAM devices on a single semiconductor chip |
Feb. 10, 1998 |
| 5712183 |
Method of fabricating a via for an SRAM device |
Jan. 27, 1998 |
| 5710461 |
SRAM cell fabrication with interlevel dielectric planarization |
Jan. 20, 1998 |
| 5705843 |
Integrated circuits and SRAM memory cells |
Jan. 6, 1998 |
| 5705418 |
Process for fabricating reduced-thickness high-resistance load resistors in four-transistor SRAM devices |
Jan. 6, 1998 |
| 5705436 |
Method for forming a poly load resistor |
Jan. 6, 1998 |
| 5705437 |
Trench free process for SRAM |
Jan. 6, 1998 |
| 5700711 |
Method of manufacturing an SRAM load shield |
Dec. 23, 1997 |
| 5700707 |
Method of manufacturing SRAM cell structure having a tunnel oxide capacitor |
Dec. 23, 1997 |
| 5700705 |
Semiconductor integrated circuit device |
Dec. 23, 1997 |
| 5694354 |
Static random access memory device having a single bit line configuration |
Dec. 2, 1997 |
| 5691561 |
Semiconductor device and method for manufacturing semiconductor device |
Nov. 25, 1997 |
| 5691547 |
Planar thin film transistor structures |
Nov. 25, 1997 |
| 5691217 |
Semiconductor processing method of forming a pair of field effect transistors having different thickness gate dielectric layers |
Nov. 25, 1997 |
| 5688712 |
Process for producing a semiconductor device |
Nov. 18, 1997 |
| 5686334 |
Method of making SRAM cell with thin film transistor using two polysilicon layers |
Nov. 11, 1997 |
| 5686335 |
Method of making high-performance and reliable thin film transistor (TFT) using plasma hydrogenation with a metal shield on the TFT channel |
Nov. 11, 1997 |
| 5686336 |
Method of manufacture of four transistor SRAM cell layout |
Nov. 11, 1997 |
| 5686338 |
Process for fabricating high-resistance load resistors using dummy polysilicon in four-transistor SRAM devices |
Nov. 11, 1997 |
| 5683930 |
SRAM cell employing substantially vertically elongated pull-up resistors and methods of making, and resistor constructions and methods of making |
Nov. 4, 1997 |
| 5681778 |
Semiconductor processing method of forming a buried contact and conductive line |
Oct. 28, 1997 |
| 5681769 |
Method of fabricating a high capacitance insulated-gate field effect transistor |
Oct. 28, 1997 |
| 5677866 |
Semiconductor memory device |
Oct. 14, 1997 |
| 5675165 |
Stable SRAM cell using low backgate biased threshold voltage select transistors |
Oct. 7, 1997 |
| 5674770 |
Method of fabricating an SRAM device with a self-aligned thin film transistor structure |
Oct. 7, 1997 |
| 5672536 |
Method of manufacturing a novel static memory cell having a tunnel diode |
Sep. 30, 1997 |
| 5670803 |
Three-dimensional SRAM trench structure and fabrication method therefor |
Sep. 23, 1997 |
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