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Class Information
Number: 257/E21.655
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components or integrated circuits formed in, or on, common substrate (epo) > With subsequent division of substrate into plural individual devices (epo) > To produce devices each consisting of plurality of components, e.g., integrated circuits (epo) > Substrate being semiconductor, using silicon technology (epo) > Field-effect technology (epo) > Mis technology (epo) > Dynamic random access memory structures (dram) (epo) > Characterized by type of capacitor (epo) > Characterized by type of transistor; manufacturing of transistor (epo) > Transistor in u- or v-shaped trench in substrate (epo)
Description: This subclass is indented under subclass E21.654. This subclass is substantially the same in scope as ECLA classification H01L21/8242C2.


Patents under this class:
1 2 3 4 5 6

Patent Number Title Of Patent Date Issued
7615493 Method for forming alignment mark Nov. 10, 2009
7608511 Fabrication method of trenched power MOSFET with low gate impedance Oct. 27, 2009
7605092 Passive elements, articles, packages, semiconductor composites, and methods of manufacturing same Oct. 20, 2009
7592218 Methods of forming vertical transistors Sep. 22, 2009
7592233 Method for forming a memory device with a recessed gate Sep. 22, 2009
7589369 Semiconductor constructions Sep. 15, 2009
7579273 Method of manufacturing a photodiode array with through-wafer vias Aug. 25, 2009
7563677 Recessed gate electrode and method of forming the same and semiconductor device having the recessed gate electrode and method of manufacturing the same Jul. 21, 2009
7563683 Transistor and method of fabricating the same Jul. 21, 2009
7547604 Method of forming a recessed gate structure on a substrate having insulating columns and removing said insulating columns after forming a conductive region of the gate structure Jun. 16, 2009
7541300 Silicon carbide semiconductor device and method for manufacturing the same Jun. 2, 2009
7524774 Manufacturing method of semiconductor device, semiconductor manufacturing apparatus, plasma nitridation method, computer recording medium, and program Apr. 28, 2009
7504303 Trench-gate field effect transistors and methods of forming the same Mar. 17, 2009
7494865 Fabrication method of metal oxide semiconductor transistor Feb. 24, 2009
7482229 DRAM cells with vertical transistors Jan. 27, 2009
7473603 Method for forming a shielded gate trench FET with the shield and gate electrodes being connected together Jan. 6, 2009
7470552 Method for production of MRAM elements Dec. 30, 2008
7462544 Methods for fabricating transistors having trench gates Dec. 9, 2008
7439579 Power semiconductor with functional element guide structure Oct. 21, 2008
7419871 Methods of forming semiconductor constructions Sep. 2, 2008
7419878 Planarized and silicided trench contact Sep. 2, 2008
7416948 Trench FET with improved body to gate alignment Aug. 26, 2008
7414279 Semiconductor device with improved overlay margin and method of manufacturing the same Aug. 19, 2008
7402487 Process for fabricating a semiconductor device having deep trench structures Jul. 22, 2008
7399673 Method of forming a charge-trapping memory device Jul. 15, 2008
7387931 Semiconductor memory device with vertical channel transistor and method of fabricating the same Jun. 17, 2008
7368776 Semiconductor device comprising a highly-reliable, constant capacitance capacitor May. 6, 2008
7361537 Method of fabricating recess channel array transistor Apr. 22, 2008
7344954 Method of manufacturing a capacitor deep trench and of etching a deep trench opening Mar. 18, 2008
7320919 Method for fabricating semiconductor device with metal-polycide gate and recessed channel Jan. 22, 2008
7309634 Non-volatile semiconductor memory devices using prominences and trenches Dec. 18, 2007
7306993 Method for fabricating semiconductor device with recessed channel Dec. 11, 2007
7297596 Method of manufacturing a semiconductor device having a switching function Nov. 20, 2007
7294879 Vertical MOSFET with dual work function materials Nov. 13, 2007
7276410 Semiconductor device with omega gate and method for fabricating a semiconductor device Oct. 2, 2007
7276753 Dynamic random access memory cell and fabricating method thereof Oct. 2, 2007
7276752 Methods of forming integrated circuits, and DRAM circuitry memory cells Oct. 2, 2007
7241658 Vertical gain cell Jul. 10, 2007
7238573 Method for fabricating a trench transistor of semiconductor device Jul. 3, 2007
7220640 Method of fabricating recess transistor in integrated circuit device and recess transistor in integrated circuit device fabricated by the same May. 22, 2007
7157378 Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode Jan. 2, 2007
7087950 Flash memory cell, flash memory device and manufacturing method thereof Aug. 8, 2006
7067372 Method for fabricating a memory cell having a trench Jun. 27, 2006
7042040 Semiconductor device and method for manufacturing the same May. 9, 2006
7034358 Vertical transistor, and a method for producing a vertical transistor Apr. 25, 2006
7034336 Capacitorless 1-transistor DRAM cell and fabrication method Apr. 25, 2006
7026647 Device and method for detecting alignment of active areas and memory cell structures in DRAM devices Apr. 11, 2006
7015525 Folded bit line DRAM with vertical ultra thin body transistors Mar. 21, 2006
7015543 Trench-gate semiconductor device and fabrication method thereof Mar. 21, 2006
7009869 Dynamic memory cell Mar. 7, 2006

1 2 3 4 5 6


 
 
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