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Class Information
Number: 257/E21.653
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components or integrated circuits formed in, or on, common substrate (epo) > With subsequent division of substrate into plural individual devices (epo) > To produce devices each consisting of plurality of components, e.g., integrated circuits (epo) > Substrate being semiconductor, using silicon technology (epo) > Field-effect technology (epo) > Mis technology (epo) > Dynamic random access memory structures (dram) (epo) > Characterized by type of capacitor (epo) > Capacitor stacked over transfer transis tor (epo) > Capacitor in u- or v-shaped trench in substrate (epo) > Making connection between transistor and capacitor, e.g., buried strap (epo)
Description: This subclass is indented under subclass E21.651. This subclass is substantially the same in scope as ECLA classification H01L21/8242B6C.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7608510 |
Alignment of trench for MOS |
Oct. 27, 2009 |
| 7563669 |
Integrated circuit with a trench capacitor structure and method of manufacture |
Jul. 21, 2009 |
| 7553737 |
Method for fabricating recessed-gate MOS transistor device |
Jun. 30, 2009 |
| 7553723 |
Manufacturing method of a memory device |
Jun. 30, 2009 |
| 7518175 |
Semiconductor memory device and method for fabricating the same |
Apr. 14, 2009 |
| 7491603 |
Transistors of semiconductor device having channel region in a channel-portion hole and methods of forming the same |
Feb. 17, 2009 |
| 7439135 |
Self-aligned body contact for a semiconductor-on-insulator trench device and method of fabricating same |
Oct. 21, 2008 |
| 7276752 |
Methods of forming integrated circuits, and DRAM circuitry memory cells |
Oct. 2, 2007 |
| 7262092 |
High-voltage CMOS-compatible capacitors |
Aug. 28, 2007 |
| 7223651 |
Dram memory cell with a trench capacitor and method for production thereof |
May. 29, 2007 |
| 7208373 |
Method of forming a memory cell array and a memory cell array |
Apr. 24, 2007 |
| 7195973 |
Method for fabricating a trench capacitor with an insulation collar and corresponding trench capacitor |
Mar. 27, 2007 |
| 7192825 |
Semiconductor memory device and method for fabricating the same |
Mar. 20, 2007 |
| 7074689 |
Method for fabricating a trench capacitor having an insulation collar, which is electrically connected to a substrate on one side via a buried contact, in particular for a semiconductor memory |
Jul. 11, 2006 |
| 7067372 |
Method for fabricating a memory cell having a trench |
Jun. 27, 2006 |
| 7041568 |
Method for the production of a self-adjusted structure on a semiconductor wafer |
May. 9, 2006 |
| 7015145 |
Self-aligned collar and strap formation for semiconductor devices |
Mar. 21, 2006 |
| 6989311 |
Method for fabricating a trench contact to a deep trench capacitor having a polysilicon filling |
Jan. 24, 2006 |
| 6977405 |
Semiconductor memory with memory cells comprising a vertical selection transistor and method for fabricating it |
Dec. 20, 2005 |
| 6974988 |
DRAM cell structure capable of high integration and fabrication method thereof |
Dec. 13, 2005 |
| 6953722 |
Method for patterning ceramic layers |
Oct. 11, 2005 |
| 6946700 |
Trench DRAM cell with vertical device and buried word lines |
Sep. 20, 2005 |
| 6946345 |
Self-aligned buried strap process using doped HDP oxide |
Sep. 20, 2005 |
| 6916721 |
Method for fabricating a trench capacitor with an insulation collar |
Jul. 12, 2005 |
| 6906372 |
Semiconductor device with vertical transistor formed in a silicon-on-insulator substrate |
Jun. 14, 2005 |
| 6897107 |
Method for forming TTO nitride liner for improved collar protection and TTO reliability |
May. 24, 2005 |
| 6872620 |
Trench capacitors with reduced polysilicon stress |
Mar. 29, 2005 |
| 6873000 |
Storage cell field and method of producing the same |
Mar. 29, 2005 |
| 6849496 |
DRAM with vertical transistor and trench capacitor memory cells and method of fabrication |
Feb. 1, 2005 |
| 6849890 |
Semiconductor device and manufacturing method thereof |
Feb. 1, 2005 |
| 6838335 |
Method for fabricating a vertical transistor, and semiconductor memory cell having a trench capacitor and an associated vertical selection transistor |
Jan. 4, 2005 |
| 6833302 |
Method for fabricating a memory cell |
Dec. 21, 2004 |
| 6828615 |
Vertical internally-connected trench cell (V-ICTC) and formation method for semiconductor memory devices |
Dec. 7, 2004 |
| 6828192 |
Semiconductor memory cell and method for fabricating the memory cell |
Dec. 7, 2004 |
| 6821861 |
Method for fabricating an electrode arrangement for charge storage |
Nov. 23, 2004 |
| 6818501 |
Method of making a self-aligned recessed container cell capacitor |
Nov. 16, 2004 |
| 6815749 |
Backside buried strap for SOI DRAM trench capacitor |
Nov. 9, 2004 |
| 6812093 |
Method for fabricating memory cell structure employing contiguous gate and capacitor dielectric layer |
Nov. 2, 2004 |
| 6809368 |
TTO nitride liner for improved collar protection and TTO reliability |
Oct. 26, 2004 |
| 6797562 |
Method for manufacturing a buried strap contact in a memory cell |
Sep. 28, 2004 |
| 6797590 |
DRAM cell structure capable of high integration and fabrication method thereof |
Sep. 28, 2004 |
| 6794259 |
Method for fabricating self-aligning mask layers |
Sep. 21, 2004 |
| 6787837 |
Semiconductor memory with trench capacitor and method of manufacturing the same |
Sep. 7, 2004 |
| 6784477 |
Structure of a deep trench-type DRAM |
Aug. 31, 2004 |
| 6781180 |
Trench capacitor and method for fabricating the same |
Aug. 24, 2004 |
| 6773983 |
Memory cell arrangement and method for its fabrication |
Aug. 10, 2004 |
| 6768155 |
Circuit with buried strap including liner |
Jul. 27, 2004 |
| 6759291 |
Self-aligned near surface strap for high density trench DRAMS |
Jul. 6, 2004 |
| 6759702 |
Memory cell with vertical transistor and trench capacitor with reduced burried strap |
Jul. 6, 2004 |
| 6759335 |
Buried strap formation method for sub-150 nm best DRAM devices |
Jul. 6, 2004 |
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