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Class Information
Number: 257/E21.652
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components or integrated circuits formed in, or on, common substrate (epo) > With subsequent division of substrate into plural individual devices (epo) > To produce devices each consisting of plurality of components, e.g., integrated circuits (epo) > Substrate being semiconductor, using silicon technology (epo) > Field-effect technology (epo) > Mis technology (epo) > Dynamic random access memory structures (dram) (epo) > Characterized by type of capacitor (epo) > Capacitor stacked over transfer transis tor (epo) > Capacitor in u- or v-shaped trench in substrate (epo) > In combination with vertical transistor (epo)
Description: This subclass is indented under subclass E21.651. This subclass is substantially the same in scope as ECLA classification H01L21/8242B6B.










Patents under this class:
1 2 3 4 5 6

Patent Number Title Of Patent Date Issued
8461002 Vertical transistor, memory cell, device, system and method of forming same Jun. 11, 2013
8372710 Vertical transistors Feb. 12, 2013
8324056 Vertical type semiconductor device and method of manufacturing a vertical type semiconductor device Dec. 4, 2012
8247860 Nonvolatile semiconductor memory device and method for manufacturing same Aug. 21, 2012
8063441 Vertical type semiconductor device Nov. 22, 2011
7948024 Multi-layered, vertically stacked non-volatile memory device and method of fabrication May. 24, 2011
7863174 Vertical pillar transistor Jan. 4, 2011
7821058 Nonvolatile semiconductor memory and method for manufacturing the same Oct. 26, 2010
7785959 Method of multi-port memory fabrication with parallel connected trench capacitors in a cell Aug. 31, 2010
7759190 Memory device and fabrication method thereof Jul. 20, 2010
7759191 Vertical SOI transistor memory cell and method of forming the same Jul. 20, 2010
7749846 Method of forming contact structure and method of fabricating semiconductor device using the same Jul. 6, 2010
7611931 Semiconductor structures with body contacts and fabrication methods thereof Nov. 3, 2009
7608510 Alignment of trench for MOS Oct. 27, 2009
7563686 Method for forming a memory device with a recessed gate Jul. 21, 2009
7563670 Method for etching single-crystal semiconductor selective to amorphous/polycrystalline semiconductor and structure formed by same Jul. 21, 2009
7547604 Method of forming a recessed gate structure on a substrate having insulating columns and removing said insulating columns after forming a conductive region of the gate structure Jun. 16, 2009
7485525 Method of manufacturing a multiple port memory having a plurality of parallel connected trench capacitors in a cell Feb. 3, 2009
7482229 DRAM cells with vertical transistors Jan. 27, 2009
7445986 Memory cells with vertical transistor and capacitor and fabrication methods thereof Nov. 4, 2008
7439135 Self-aligned body contact for a semiconductor-on-insulator trench device and method of fabricating same Oct. 21, 2008
7429509 Method for forming a semiconductor device Sep. 30, 2008
7394124 Dynamic random access memory device Jul. 1, 2008
7364997 Methods of forming integrated circuitry and methods of forming local interconnects Apr. 29, 2008
7358133 Semiconductor device and method for making the same Apr. 15, 2008
7354822 Method of forming a MOSFET with dual work function materials Apr. 8, 2008
7316952 Method for forming a memory device with a recessed gate Jan. 8, 2008
7316953 Method for forming a recessed gate with word lines Jan. 8, 2008
7276754 Annular gate and technique for fabricating an annular gate Oct. 2, 2007
7229872 Low voltage power MOSFET device and process for its manufacture Jun. 12, 2007
7115934 Method and structure for enhancing trench capacitance Oct. 3, 2006
7067372 Method for fabricating a memory cell having a trench Jun. 27, 2006
7057224 Semiconductor memory having an arrangement of memory cells Jun. 6, 2006
7057223 Circuit and method for a folded bit line memory cell with vertical transistor and trench capacitor Jun. 6, 2006
7049196 Vertical gain cell and array for a dynamic random access memory and method for forming the same May. 23, 2006
7015526 Dynamic memory cell and method of manufacturing same Mar. 21, 2006
7015145 Self-aligned collar and strap formation for semiconductor devices Mar. 21, 2006
7009869 Dynamic memory cell Mar. 7, 2006
7005346 Method for producing a memory cell of a memory cell field in a semiconductor memory Feb. 28, 2006
6987043 Method of manufacturing semiconductor device having a plurality of trench-type data storage capacitors Jan. 17, 2006
6977405 Semiconductor memory with memory cells comprising a vertical selection transistor and method for fabricating it Dec. 20, 2005
6974988 DRAM cell structure capable of high integration and fabrication method thereof Dec. 13, 2005
6946700 Trench DRAM cell with vertical device and buried word lines Sep. 20, 2005
6946345 Self-aligned buried strap process using doped HDP oxide Sep. 20, 2005
6936484 Method of manufacturing semiconductor device and semiconductor device Aug. 30, 2005
6909136 Trench-capacitor DRAM cell having a folded gate conductor Jun. 21, 2005
6906372 Semiconductor device with vertical transistor formed in a silicon-on-insulator substrate Jun. 14, 2005
6897107 Method for forming TTO nitride liner for improved collar protection and TTO reliability May. 24, 2005
6887749 Multiple oxide thicknesses for merged memory and logic applications May. 3, 2005
6873010 High performance logic and high density embedded dram with borderless contact and antispacer Mar. 29, 2005

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