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Class Information
Number: 257/E21.651
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components or integrated circuits formed in, or on, common substrate (epo) > With subsequent division of substrate into plural individual devices (epo) > To produce devices each consisting of plurality of components, e.g., integrated circuits (epo) > Substrate being semiconductor, using silicon technology (epo) > Field-effect technology (epo) > Mis technology (epo) > Dynamic random access memory structures (dram) (epo) > Characterized by type of capacitor (epo) > Capacitor stacked over transfer transis tor (epo) > Capacitor in u- or v-shaped trench in substrate (epo)
Description: This subclass is indented under subclass E21.647. This subclass is substantially the same in scope as ECLA classification H01L21/8242B6.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7608506 |
Body-contacted semiconductor structures and methods of fabricating such body-contacted semiconductor structures |
Oct. 27, 2009 |
| 7601596 |
Semiconductor device with trench transistors and method for manufacturing such a device |
Oct. 13, 2009 |
| 7592233 |
Method for forming a memory device with a recessed gate |
Sep. 22, 2009 |
| 7585723 |
Method for fabricating capacitor |
Sep. 8, 2009 |
| 7585741 |
Methods of forming capacitors |
Sep. 8, 2009 |
| 7579235 |
Container capacitor structure and method of formation thereof |
Aug. 25, 2009 |
| 7575970 |
Deep trench capacitor through SOI substrate and methods of forming |
Aug. 18, 2009 |
| 7563669 |
Integrated circuit with a trench capacitor structure and method of manufacture |
Jul. 21, 2009 |
| 7544562 |
Method for manufacturing a capacitor electrode structure |
Jun. 9, 2009 |
| 7504299 |
Folded node trench capacitor |
Mar. 17, 2009 |
| 7494891 |
Trench capacitor with void-free conductor fill |
Feb. 24, 2009 |
| 7488642 |
Process for forming a buried plate |
Feb. 10, 2009 |
| 7479688 |
STI stress modification by nitrogen plasma treatment for improving performance in small width devices |
Jan. 20, 2009 |
| 7470585 |
Integrated circuit and fabrication process |
Dec. 30, 2008 |
| 7445988 |
Trench memory |
Nov. 4, 2008 |
| 7446366 |
Process sequence for doped silicon fill of deep trenches |
Nov. 4, 2008 |
| 7432165 |
Semiconductor memory device, semiconductor device, and method for production thereof |
Oct. 7, 2008 |
| 7416943 |
Peripheral gate stacks and recessed array gates |
Aug. 26, 2008 |
| 7402488 |
Method of manufacturing a semiconductor memory device |
Jul. 22, 2008 |
| 7387939 |
Methods of forming semiconductor structures and capacitor devices |
Jun. 17, 2008 |
| 7354822 |
Method of forming a MOSFET with dual work function materials |
Apr. 8, 2008 |
| 7355234 |
Semiconductor device including a stacked capacitor |
Apr. 8, 2008 |
| 7339224 |
Trench capacitor and corresponding method of production |
Mar. 4, 2008 |
| 7335554 |
Method for fabricating semiconductor |
Feb. 26, 2008 |
| 7332390 |
Semiconductor memory device and fabrication thereof |
Feb. 19, 2008 |
| 7316951 |
Fabrication method for a trench capacitor having an insulation collar |
Jan. 8, 2008 |
| 7312114 |
Manufacturing method for a trench capacitor having an isolation collar electrically connected with a substrate on a single side via a buried contact for use in a semiconductor memory cell |
Dec. 25, 2007 |
| 7291533 |
Method for production of trench DRAM cells and a trench DRAM cell array with fin field-effect transistors with a curved channel (CFET--curved fets) |
Nov. 6, 2007 |
| 7271052 |
Long retention time single transistor vertical memory gain cell |
Sep. 18, 2007 |
| 7271083 |
One-transistor random access memory technology compatible with metal gate process |
Sep. 18, 2007 |
| 7250336 |
Method for fabricating a shadow mask in a trench of a microelectronic or micromechanical structure |
Jul. 31, 2007 |
| 7229877 |
Trench capacitor with hybrid surface orientation substrate |
Jun. 12, 2007 |
| 7157329 |
Trench capacitor with buried strap |
Jan. 2, 2007 |
| 7144770 |
Memory cell and method for fabricating it |
Dec. 5, 2006 |
| 7109543 |
Semiconductor device having trench capacitor and method for fabricating the same |
Sep. 19, 2006 |
| 7078289 |
Method for fabricating a deep trench capacitor of DRAM device |
Jul. 18, 2006 |
| 7074317 |
Method for fabricating trench capacitors for large scale integrated semiconductor memories |
Jul. 11, 2006 |
| 7071054 |
Methods of fabricating MIM capacitors in semiconductor devices |
Jul. 4, 2006 |
| 7049647 |
Semiconductor memory cell with trench capacitor and selection transistor and method for fabricating it |
May. 23, 2006 |
| 7018904 |
Semiconductor chip having multiple functional blocks integrated in a single chip and method for fabricating the same |
Mar. 28, 2006 |
| 6998667 |
Scalable gate and storage dielectric |
Feb. 14, 2006 |
| 6998307 |
Method for fabricating a storage capacitor |
Feb. 14, 2006 |
| 6995418 |
Integrated semiconductor storage with at least a storage cell and procedure |
Feb. 7, 2006 |
| 6987295 |
Trench capacitor and method for fabricating the trench capacitor |
Jan. 17, 2006 |
| 6984556 |
Method of forming an isolation layer and method of manufacturing a trench capacitor |
Jan. 10, 2006 |
| 6977228 |
Semiconductor device using damascene technique and manufacturing method therefor |
Dec. 20, 2005 |
| 6960818 |
Recessed shallow trench isolation structure nitride liner and method for making same |
Nov. 1, 2005 |
| 6932916 |
Semiconductor substrate with trenches of varying depth |
Aug. 23, 2005 |
| 6919246 |
Semiconductor device and fabricating method thereof |
Jul. 19, 2005 |
| 6906384 |
Semiconductor device having one of patterned SOI and SON structure |
Jun. 14, 2005 |
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