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Class Information
Number: 257/E21.651
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components or integrated circuits formed in, or on, common substrate (epo) > With subsequent division of substrate into plural individual devices (epo) > To produce devices each consisting of plurality of components, e.g., integrated circuits (epo) > Substrate being semiconductor, using silicon technology (epo) > Field-effect technology (epo) > Mis technology (epo) > Dynamic random access memory structures (dram) (epo) > Characterized by type of capacitor (epo) > Capacitor stacked over transfer transis tor (epo) > Capacitor in u- or v-shaped trench in substrate (epo)
Description: This subclass is indented under subclass E21.647. This subclass is substantially the same in scope as ECLA classification H01L21/8242B6.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.652 In combination with vertical transistor (epo) 299
257/E21.653 Making connection between transistor and capacitor, e.g., buried strap (epo) 193


Patents under this class:
1 2 3 4 5 6 7 8 9 10

Patent Number Title Of Patent Date Issued
8653596 Integrated circuit including DRAM and SRAM/logic Feb. 18, 2014
8587047 Capacitor formation for a pumping circuit Nov. 19, 2013
8530324 Methods of fabricating microelectronic memory devices having flat stopper layers Sep. 10, 2013
8492816 Deep trench decoupling capacitor Jul. 23, 2013
8481398 Method of forming semiconductor device having a capacitor Jul. 9, 2013
8441097 Methods to form memory devices having a capacitor with a recessed electrode May. 14, 2013
8410534 Integrated circuit structures with silicon germanium film incorporated as local interconnect and/or contact Apr. 2, 2013
8405136 Semiconductor devices including capacitor support pads Mar. 26, 2013
8367497 Method to reduce trench capacitor leakage for random access memory device Feb. 5, 2013
8252646 Peripheral gate stacks and recessed array gates Aug. 28, 2012
8232162 Forming implanted plates for high aspect ratio trenches using staged sacrificial layer removal Jul. 31, 2012
8227310 Integrated circuits comprising an active transistor electrically connected to a trench capacitor by an overlying contact and methods of making Jul. 24, 2012
8222103 Semiconductor device with embedded low-K metallization Jul. 17, 2012
8188526 Semiconductor device May. 29, 2012
8164132 Methods of forming integrated circuit devices Apr. 24, 2012
8133781 Method of forming a buried plate by ion implantation Mar. 13, 2012
8129772 Integrated circuit structures with silicon germanium film incorporated as local interconnect and/or contact Mar. 6, 2012
8110475 Method for forming a memory device with C-shaped deep trench capacitors Feb. 7, 2012
8101482 Method of fabricating semiconductor device having transistor Jan. 24, 2012
8008160 Method and structure for forming trench DRAM with asymmetric strap Aug. 30, 2011
8003480 Process using oxide supporter for manufacturing a capacitor lower electrode of a micro stacked DRAM Aug. 23, 2011
7998808 Semiconductor device fabrication using spacers Aug. 16, 2011
7947553 Method for fabricating semiconductor device with recess gate May. 24, 2011
7943474 EDRAM including metal plates May. 17, 2011
7939409 Peripheral gate stacks and recessed array gates May. 10, 2011
7915136 Methods of forming integrated circuit devices Mar. 29, 2011
7897473 Method of manufacturing a dual contact trench capacitor Mar. 1, 2011
7871891 Method of manufacturing semiconductor devices including capacitor support pads Jan. 18, 2011
7871883 Method of manufacturing semiconductor device includes the step of depositing the capacitor insulating film in a form of a hafnium silicate Jan. 18, 2011
7846809 Method for forming capacitor of semiconductor device Dec. 7, 2010
7833872 Uniform recess of a material in a trench independent of incoming topography Nov. 16, 2010
7811881 Methods for forming semiconductor structures with buried isolation collars and semiconductor structures formed by these methods Oct. 12, 2010
7757393 Capacitive microaccelerometers and fabrication methods Jul. 20, 2010
7709342 Capacitor and method of manufacturing the same May. 4, 2010
7700436 Method for forming a microelectronic structure having a conductive material and a fill material with a hardness of 0.04 GPA or higher within an aperture Apr. 20, 2010
7682897 DRAM fabrication method using oxidation spacers on pillar dielectric sidewalls Mar. 23, 2010
7674675 Method of forming an integrated SOI fingered decoupling capacitor Mar. 9, 2010
7608506 Body-contacted semiconductor structures and methods of fabricating such body-contacted semiconductor structures Oct. 27, 2009
7601596 Semiconductor device with trench transistors and method for manufacturing such a device Oct. 13, 2009
7592233 Method for forming a memory device with a recessed gate Sep. 22, 2009
7585741 Methods of forming capacitors Sep. 8, 2009
7585723 Method for fabricating capacitor Sep. 8, 2009
7579235 Container capacitor structure and method of formation thereof Aug. 25, 2009
7575970 Deep trench capacitor through SOI substrate and methods of forming Aug. 18, 2009
7563669 Integrated circuit with a trench capacitor structure and method of manufacture Jul. 21, 2009
7544562 Method for manufacturing a capacitor electrode structure Jun. 9, 2009
7504299 Folded node trench capacitor Mar. 17, 2009
7494891 Trench capacitor with void-free conductor fill Feb. 24, 2009
7488642 Process for forming a buried plate Feb. 10, 2009
7479688 STI stress modification by nitrogen plasma treatment for improving performance in small width devices Jan. 20, 2009

1 2 3 4 5 6 7 8 9 10










 
 
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