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Class Information
Number: 257/E21.64
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components or integrated circuits formed in, or on, common substrate (epo) > With subsequent division of substrate into plural individual devices (epo) > To produce devices each consisting of plurality of components, e.g., integrated circuits (epo) > Substrate being semiconductor, using silicon technology (epo) > Field-effect technology (epo) > Mis technology (epo) > Complementary field-effect transistors, e.g., cmos (epo) > With particular manufacturing method of gate sidewall spacers, e.g., double spacers, particular spacer material or shape (epo)
Description: This subclass is indented under subclass E21.632. This subclass is substantially the same in scope as ECLA classification H01L21/8238S.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8680602 Semiconductor device and method of manufacturing the same Mar. 25, 2014
8673725 Multilayer sidewall spacer for seam protection of a patterned structure Mar. 18, 2014
8664102 Dual sidewall spacer for seam protection of a patterned structure Mar. 4, 2014
8664709 Non-volatile memory and fabricating method thereof Mar. 4, 2014
8658491 Manufacturing method of transistor structure having a recessed channel Feb. 25, 2014
8647952 Encapsulation of closely spaced gate electrode structures Feb. 11, 2014
8633070 Lightly doped source/drain last method for dual-epi integration Jan. 21, 2014
8614469 Semiconductor device and manufacturing method of the same Dec. 24, 2013
8580633 Method for manufacturing a semiconductor device with gate spacer Nov. 12, 2013
8530303 Method of fabricating semiconductor device Sep. 10, 2013
8530315 finFET with fully silicided gate Sep. 10, 2013
8486794 Method for manufacturing semiconductor structure Jul. 16, 2013
8476680 Semiconductor device and method for manufacturing the same Jul. 2, 2013
8461049 Method for fabricating semiconductor device Jun. 11, 2013
8461009 Spacer and process to enhance the strain in the channel with stress liner Jun. 11, 2013
8445345 CMOS structure having multiple threshold voltage devices May. 21, 2013
8426266 Stress memorization with reduced fringing capacitance based on silicon nitride in MOS semiconductor devices Apr. 23, 2013
8421166 Semiconductor device and fabrication thereof Apr. 16, 2013
8415723 Spacer structure wherein carbon-containing oxide film formed within Apr. 9, 2013
8394688 Process for forming repair layer and MOS transistor having repair layer Mar. 12, 2013
8389371 Method of fabricating integrated circuit device, including removing at least a portion of a spacer Mar. 5, 2013
8384165 Application of gate edge liner to maintain gate length CD in a replacement gate transistor flow Feb. 26, 2013
8329526 Cap removal in a high-k metal gate electrode structure by using a sacrificial fill material Dec. 11, 2012
8324110 Field effect transistor (FET) and method of forming the FET without damaging the wafer surface Dec. 4, 2012
8304834 Semiconductor local interconnect and contact Nov. 6, 2012
8304840 Spacer structures of a semiconductor device Nov. 6, 2012
8298924 Method for differential spacer removal by wet chemical etch process and device with differential spacer structure Oct. 30, 2012
8299508 CMOS structure with multiple spacers Oct. 30, 2012
8294186 Semiconductor device and manufacturing method of the same Oct. 23, 2012
8288802 Spacer structure wherein carbon-containing oxynitride film formed within Oct. 16, 2012
8278721 Contact hole, semiconductor device and method for forming the same Oct. 2, 2012
8258588 Sealing layer of a field effect transistor Sep. 4, 2012
8252675 Methods of forming CMOS transistors with high conductivity gate electrodes Aug. 28, 2012
8253204 Semiconductor device with strained channel and method of fabricating the same Aug. 28, 2012
8237205 Semiconductor device and method for fabricating the same Aug. 7, 2012
8227302 Semiconductor device, electronic device, and manufacturing method thereof Jul. 24, 2012
8222701 P-channel MOS transistor and semiconductor integrated circuit device Jul. 17, 2012
8222100 CMOS circuit with low-k spacer and stress liner Jul. 17, 2012
8216908 Extended drain transistor and method of manufacturing the same Jul. 10, 2012
8211777 Method of manufacturing nonvolatile semiconductor device Jul. 3, 2012
8198688 Semiconductor integrated circuit device with MOSFET limiter circuit Jun. 12, 2012
8183103 Integrated circuit structure including schottky diode and method for manufacturing the same May. 22, 2012
8164085 Semiconductor device and production method thereof Apr. 24, 2012
8138045 Method of forming sidewall spacers to reduce formation of recesses in the substrate and increase dopant retention in a semiconductor device Mar. 20, 2012
8119470 Mitigation of gate to contact capacitance in CMOS flow Feb. 21, 2012
8080439 Method of making a vertical phase change memory (PCM) and a PCM device Dec. 20, 2011
8072031 P-channel MOS transistor and semiconductor integrated circuit device Dec. 6, 2011
8072032 Semiconductor integrated circuit device having latchup preventing function Dec. 6, 2011
8039381 Photoresist etch back method for gate last process Oct. 18, 2011
8034669 Drive current adjustment for transistors formed in the same active region by locally providing embedded strain-inducing semiconductor material in the active region Oct. 11, 2011

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