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Class Information
Number: 257/E21.633
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components or integrated circuits formed in, or on, common substrate (epo) > With subsequent division of substrate into plural individual devices (epo) > To produce devices each consisting of plurality of components, e.g., integrated circuits (epo) > Substrate being semiconductor, using silicon technology (epo) > Field-effect technology (epo) > Mis technology (epo) > Complementary field-effect transistors, e.g., cmos (epo) > With particular manufacturing method of channel, e.g., channel implants, halo or pocket implants, or channel materials (epo)
Description: This subclass is indented under subclass E21.632. This subclass is substantially the same in scope as ECLA classification H01L21/8238C.

Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13

Patent Number Title Of Patent Date Issued
8703620 Methods for PFET fabrication using APM solutions Apr. 22, 2014
8664073 Method for fabricating field-effect transistor Mar. 4, 2014
8658506 Method and apparatus for selectively improving integrated device performance Feb. 25, 2014
8658543 Methods for pFET fabrication using APM solutions Feb. 25, 2014
8653604 Multiple transistor types formed in a common epitaxial layer by differential out-diffusion from a doped underlayer Feb. 18, 2014
8647939 Non-relaxed embedded stressors with solid source extension regions in CMOS devices Feb. 11, 2014
8647951 Implantation of hydrogen to improve gate insulation layer-substrate interface Feb. 11, 2014
8637938 Semiconductor device with pocket regions and method of manufacturing the same Jan. 28, 2014
8629016 Multiple transistor types formed in a common epitaxial layer by differential out-diffusion from a doped underlayer Jan. 14, 2014
8592270 Non-relaxed embedded stressors with solid source extension regions in CMOS devices Nov. 26, 2013
8580637 Method of patterning a semiconductor device having improved spacing and shape control and a semiconductor device Nov. 12, 2013
8569858 Semiconductor device including an active region and two layers having different stress characteristics Oct. 29, 2013
8557648 Recessed source and drain regions for FinFETs Oct. 15, 2013
8531010 Semiconductor device including a pillar MOS transistor Sep. 10, 2013
8530303 Method of fabricating semiconductor device Sep. 10, 2013
8519403 Angled implantation for deep submicron device optimization Aug. 27, 2013
8513074 Reduced threshold voltage-width dependency and reduced surface topography in transistors comprising high-k metal gate electrode structures by a late carbon incorporation Aug. 20, 2013
8513765 Formation method and structure for a well-controlled metallic source/drain semiconductor device Aug. 20, 2013
8486783 Semiconductor device and method of manufacturing the same Jul. 16, 2013
8481341 Epitaxial film growth in retrograde wells for semiconductor devices Jul. 9, 2013
8445969 High pressure deuterium treatment for semiconductor/high-K insulator interface May. 21, 2013
8440530 Methods of forming highly scaled semiconductor devices using a disposable spacer technique May. 14, 2013
8431496 Semiconductor device and manufacturing method thereof Apr. 30, 2013
8409975 Method for decreasing polysilicon gate resistance in a carbon co-implantation process Apr. 2, 2013
8405148 Method of fabricating a lateral double-diffused MOSFET (LDMOS) transistor and a conventional CMOS transistor Mar. 26, 2013
8377772 CMOS integration method for optimal IO transistor V.sub.T Feb. 19, 2013
8324034 Method of manufacturing display device Dec. 4, 2012
8318559 Method of fabricating CMOS transistor Nov. 27, 2012
8304305 Semiconductor component Nov. 6, 2012
8299471 Organic electroluminescent device and fabrication method thereof Oct. 30, 2012
8299538 Differential nitride pullback to create differential NFET to PFET divots for improved performance versus leakage Oct. 30, 2012
8268689 Multiple threshold voltages in field effect transistor devices Sep. 18, 2012
8232186 Methods of integrating reverse eSiGe on NFET and SiGe channel on PFET, and related structure Jul. 31, 2012
8227316 Method for manufacturing double gate finFET with asymmetric halo Jul. 24, 2012
8216903 SRAM cell with asymmetrical pass gate Jul. 10, 2012
8211773 SRAM cell with asymmetrical pass gate Jul. 3, 2012
8173497 Semiconductor device preventing floating body effect in a peripheral region thereof and method for manufacturing the same May. 8, 2012
8148221 Double anneal with improved reliability for dual contact etch stop liner scheme Apr. 3, 2012
8138544 Castellated gate MOSFET tetrode capable of fully-depleted operation Mar. 20, 2012
8125032 Modified hybrid orientation technology Feb. 28, 2012
8119487 Semiconductor device and method for fabricating the same Feb. 21, 2012
8084826 Semiconductor device and manufacturing method thereof Dec. 27, 2011
8084308 Single gate inverter nanowire mesh Dec. 27, 2011
8071436 Method of fabricating a semiconductor device having a lateral double diffused MOSFET transistor with a lightly doped source and CMOS transistor Dec. 6, 2011
8053321 Formation of standard voltage threshold and low voltage threshold MOSFET devices Nov. 8, 2011
8008136 Fully silicided gate structure for FinFET devices Aug. 30, 2011
8003458 Methods of manufacturing a semiconductor device with active regions of different heights Aug. 23, 2011
8003456 Method for producing a semiconductor component Aug. 23, 2011
7998821 Method of manufacturing complementary metal oxide semiconductor transistor Aug. 16, 2011
7994008 Transistor device with two planar gates and fabrication process Aug. 9, 2011

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