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Class Information
Number: 257/E21.633
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components or integrated circuits formed in, or on, common substrate (epo) > With subsequent division of substrate into plural individual devices (epo) > To produce devices each consisting of plurality of components, e.g., integrated circuits (epo) > Substrate being semiconductor, using silicon technology (epo) > Field-effect technology (epo) > Mis technology (epo) > Complementary field-effect transistors, e.g., cmos (epo) > With particular manufacturing method of channel, e.g., channel implants, halo or pocket implants, or channel materials (epo)
Description: This subclass is indented under subclass E21.632. This subclass is substantially the same in scope as ECLA classification H01L21/8238C.


Patents under this class:
1 2 3 4 5 6 7 8 9 10 11

Patent Number Title Of Patent Date Issued
7615433 Double anneal with improved reliability for dual contact etch stop liner scheme Nov. 10, 2009
7611939 Semiconductor device manufactured using a laminated stress layer Nov. 3, 2009
7608515 Diffusion layer for stressed semiconductor devices Oct. 27, 2009
7595243 Fabrication of semiconductor structure having N-channel channel-junction field-effect transistor Sep. 29, 2009
7592270 Modulation of stress in stress film through ion implantation and its application in stress memorization technique Sep. 22, 2009
7592619 Epitaxy layer and method of forming the same Sep. 22, 2009
7585790 Method for forming semiconductor device Sep. 8, 2009
7569449 Processes providing high and low threshold p-type and n-type transistors Aug. 4, 2009
7560312 Void formation for semiconductor junction capacitance reduction Jul. 14, 2009
7554159 Electrostatic discharge protection device and method of manufacturing the same Jun. 30, 2009
7547605 Microelectronic device and a method for its manufacture Jun. 16, 2009
7534674 Method of making a semiconductor device with a stressor May. 19, 2009
7534676 Method of forming enhanced device via transverse stress May. 19, 2009
7531392 Multi-orientation semiconductor-on-insulator (SOI) substrate, and method of fabricating same May. 12, 2009
7525162 Orientation-optimized PFETS in CMOS devices employing dual stress liners Apr. 28, 2009
7521735 Multiple layer and crystal plane orientation semiconductor substrate Apr. 21, 2009
7521307 CMOS structures and methods using self-aligned dual stressed layers Apr. 21, 2009
7514313 Process of forming an electronic device including a seed layer and a semiconductor layer selectively formed over the seed layer Apr. 7, 2009
7510943 Semiconductor devices and methods of manufacture thereof Mar. 31, 2009
7494841 Solution-based deposition process for metal chalcogenides Feb. 24, 2009
7491615 Method of fabricating strained-silicon transistors and strained-silicon CMOS transistors Feb. 17, 2009
7485923 SOI semiconductor device with improved halo region and manufacturing method of the same Feb. 3, 2009
7482216 Substrate engineering for optimum CMOS device performance Jan. 27, 2009
7479422 Semiconductor device with stressors and method therefor Jan. 20, 2009
7479688 STI stress modification by nitrogen plasma treatment for improving performance in small width devices Jan. 20, 2009
7452825 Method of forming a mask structure and method of forming a minute pattern using the same Nov. 18, 2008
7449373 Method of ion implanting for tri-gate devices Nov. 11, 2008
7439140 Formation of standard voltage threshold and low voltage threshold MOSFET devices Oct. 21, 2008
7432160 Semiconductor devices including transistors having three dimensional channels and methods of fabricating the same Oct. 7, 2008
7432167 Method of fabricating a strained silicon channel metal oxide semiconductor transistor Oct. 7, 2008
7416931 Methods for fabricating a stress enhanced MOS circuit Aug. 26, 2008
7413946 Formation of standard voltage threshold and low voltage threshold MOSFET devices Aug. 19, 2008
7410876 Methodology to reduce SOI floating-body effect Aug. 12, 2008
7411245 Spacer barrier structure to prevent spacer voids and method for forming the same Aug. 12, 2008
7402496 Complementary metal-oxide-semiconductor device and fabricating method thereof Jul. 22, 2008
7402497 Transistor device having an increased threshold stability without drive current degradation Jul. 22, 2008
7371630 Patterned backside stress engineering for transistor performance optimization May. 13, 2008
7371648 Method for manufacturing a transistor device having an improved breakdown voltage and a method for manufacturing an integrated circuit using the same May. 13, 2008
7335948 Integrated circuit incorporating higher voltage devices and low voltage devices therein Feb. 26, 2008
7314789 Structure and method to generate local mechanical gate stress for MOSFET channel mobility modification Jan. 1, 2008
7288451 Method and structure for forming self-aligned, dual stress liner for CMOS devices Oct. 30, 2007
7282402 Method of making a dual strained channel semiconductor device Oct. 16, 2007
7279406 Tailoring channel strain profile by recessed material composition control Oct. 9, 2007
7265002 Method for making a semiconductor device including a MOSFET having a band-engineered superlattice with a semiconductor cap layer providing a channel Sep. 4, 2007
7265012 Formation of standard voltage threshold and low voltage threshold MOSFET devices Sep. 4, 2007
7250332 Method for fabricating a semiconductor device having improved hot carrier immunity ability Jul. 31, 2007
7247532 High voltage transistor and method for fabricating the same Jul. 24, 2007
7232744 Method for implanting dopants within a substrate by tilting the substrate relative to the implant source Jun. 19, 2007
7220626 Structure and method for manufacturing planar strained Si/SiGe substrate with multiple orientations and different stress levels May. 22, 2007
7211869 Increasing carrier mobility in NFET and PFET transistors on a common wafer May. 1, 2007

1 2 3 4 5 6 7 8 9 10 11


 
 
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