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Class Information
Number: 257/E21.622
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components or integrated circuits formed in, or on, common substrate (epo) > With subsequent division of substrate into plural individual devices (epo) > To produce devices each consisting of plurality of components, e.g., integrated circuits (epo) > Substrate being semiconductor, using silicon technology (epo) > Field-effect technology (epo) > Mis technology (epo) > With particular manufacturing method of gate conductor, e.g., particular materials, shapes (epo) > Silicided or salicided gate conductors (epo)
Description: This subclass is indented under subclass E21.621. This subclass is substantially the same in scope as ECLA classification H01L21/8234G2.










Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8691703 Method of manufacturing semiconductor device Apr. 8, 2014
8643126 Self aligned silicided contacts Feb. 4, 2014
8563429 Methods of forming a metal silicide layer for semiconductor devices Oct. 22, 2013
8350344 Semiconductor device and method of fabricating the same Jan. 8, 2013
8330234 Semiconductor device and manufacturing process therefor Dec. 11, 2012
8293631 Semiconductor devices having tensile and/or compressive stress and methods of manufacturing Oct. 23, 2012
8294216 Integrating the formation of I/O and core MOS devices with MOS capacitors and resistors Oct. 23, 2012
8159038 Self aligned silicided contacts Apr. 17, 2012
8076239 Semiconductor device and method of manufacturing the same Dec. 13, 2011
8053292 Semiconductor device and method of manufacturing semiconductor device Nov. 8, 2011
8012789 Nonvolatile memory device and method of manufacturing the same Sep. 6, 2011
7977194 Method for fabricating semiconductor device with fully silicided gate electrode Jul. 12, 2011
7960280 Process method to fully salicide (FUSI) both N-poly and P-poly on a CMOS flow Jun. 14, 2011
7939452 Method of manufacturing transistor having metal silicide and method of manufacturing a semiconductor device using the same May. 10, 2011
7906351 Method for metal gate quality characterization Mar. 15, 2011
7888264 MOSFET structure with multiple self-aligned silicide contacts Feb. 15, 2011
7880233 Transistor with raised source and drain formed on SOI substrate Feb. 1, 2011
7867899 Wordline resistance reduction method and structure in an integrated circuit memory device Jan. 11, 2011
7858524 Method of manufacturing semiconductor device with silicide gate electrodes Dec. 28, 2010
7820546 Method for manufacturing semiconductor device preventing loss of junction region Oct. 26, 2010
7759202 Method for forming semiconductor device with gates of different materials Jul. 20, 2010
7714408 Semiconductor device and manufacturing method thereof May. 11, 2010
7642166 Method of forming metal-oxide-semiconductor transistors Jan. 5, 2010
7638427 MOS transistor with fully silicided gate Dec. 29, 2009
7622387 Gate electrode silicidation process Nov. 24, 2009
7605045 Field effect transistors and methods for fabricating the same Oct. 20, 2009
7582535 Method of forming MOS transistor having fully silicided metal gate electrode Sep. 1, 2009
7534709 Semiconductor device and method of manufacturing the same May. 19, 2009
7494878 Metal-oxide-semiconductor transistor and method of forming the same Feb. 24, 2009
7491635 Method for forming a fully silicided gate and devices obtained thereof Feb. 17, 2009
7456095 Method and apparatus for forming nickel silicide with low defect density in FET devices Nov. 25, 2008
7442640 Semiconductor device manufacturing methods Oct. 28, 2008
7419905 Gate electrodes and the formation thereof Sep. 2, 2008
7410852 Opto-thermal annealing methods for forming metal gate and fully silicided gate field effect transistors Aug. 12, 2008
7396724 Dual-hybrid liner formation without exposing silicide layer to photoresist stripping chemicals Jul. 8, 2008
7368353 Trench power MOSFET with reduced gate resistance May. 6, 2008
7332420 Method for manufacturing semiconductor device Feb. 19, 2008
7320914 System and method for gate formation in a semiconductor device Jan. 22, 2008
7306990 Information storage element, manufacturing method thereof, and memory array Dec. 11, 2007
7208409 Integrated circuit metal silicide method Apr. 24, 2007
7202132 Protecting silicon germanium sidewall with silicon for strained silicon/silicon germanium MOSFETs Apr. 10, 2007
7179702 Semiconductor device including metal insulator semiconductor field effect transistor and method of manufacturing the same Feb. 20, 2007
7172967 Methods for forming cobalt layers including introducing vaporized cobalt precursors and methods for manufacturing semiconductor devices using the same Feb. 6, 2007
7118954 High voltage metal-oxide-semiconductor transistor devices and method of making the same Oct. 10, 2006
7064027 Method and structure to use an etch resistant liner on transistor gate structure to achieve high device performance Jun. 20, 2006
7057236 Semiconductor device and manufacturing method thereof Jun. 6, 2006
7008835 Method of manufacturing a semiconductor device having a gate structure with low parasitic capacitance Mar. 7, 2006
6974999 Semiconductor device and method of manufacturing the same Dec. 13, 2005
6958520 Semiconductor apparatus which comprises at least two kinds of semiconductor devices operable by voltages of different values Oct. 25, 2005
6936882 Selective silicidation of gates in semiconductor devices to achieve multiple threshold voltages Aug. 30, 2005

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