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Class Information
Number: 257/E21.618
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components or integrated circuits formed in, or on, common substrate (epo) > With subsequent division of substrate into plural individual devices (epo) > To produce devices each consisting of plurality of components, e.g., integrated circuits (epo) > Substrate being semiconductor, using silicon technology (epo) > Field-effect technology (epo) > Mis technology (epo) > With particular manufacturing method of channel, e.g., channel implants, halo or pocket implants, or channel materials (epo)
Description: This subclass is indented under subclass E21.616. This subclass is substantially the same in scope as ECLA classification H01L21/8234C.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 6953728 |
Semiconductor device and method of manufacturing thereof |
Oct. 11, 2005 |
| 6949787 |
Transistor having high dielectric constant gate insulating layer and source and drain forming Schottky contact with substrate |
Sep. 27, 2005 |
| 6946337 |
Method of manufacturing semiconductor devices |
Sep. 20, 2005 |
| 6930361 |
Semiconductor device realizing characteristics like a SOI MOSFET |
Aug. 16, 2005 |
| 6930374 |
Semiconductor device of transistor structure having strained semiconductor layer |
Aug. 16, 2005 |
| 6924543 |
Method for making a semiconductor device having increased carrier mobility |
Aug. 2, 2005 |
| 6921944 |
Semiconductor device formed on a single semiconductor substrate having semiconductor elements operated at a predetermined voltage and a voltage lower than that |
Jul. 26, 2005 |
| 6916716 |
Asymmetric halo implants |
Jul. 12, 2005 |
| 6908859 |
Low leakage power transistor and method of forming |
Jun. 21, 2005 |
| 6900103 |
Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits |
May. 31, 2005 |
| 6891761 |
Semiconductor device and manufacturing method |
May. 10, 2005 |
| 6891210 |
Semiconductor device having a protection circuit |
May. 10, 2005 |
| 6882009 |
Electrostatic discharge protection device and method of manufacturing the same |
Apr. 19, 2005 |
| 6875680 |
Methods of manufacturing transistors using dummy gate patterns |
Apr. 5, 2005 |
| 6875666 |
Methods of manufacturing transistors and transistors having an anti-punchthrough region |
Apr. 5, 2005 |
| 6875646 |
Semiconductor processing methods of forming integrated circuitry |
Apr. 5, 2005 |
| 6855984 |
Process to reduce gate edge drain leakage in semiconductor devices |
Feb. 15, 2005 |
| 6852576 |
Method for forming structures in finfet devices |
Feb. 8, 2005 |
| 6849883 |
Strained SOI MOSFET device and method of fabricating same |
Feb. 1, 2005 |
| 6846751 |
Nitrogen implementation to minimize device variation |
Jan. 25, 2005 |
| 6833594 |
Semiconductor integrated circuit device and manufacture method therefore |
Dec. 21, 2004 |
| 6830976 |
Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits |
Dec. 14, 2004 |
| 6825530 |
Zero Threshold Voltage pFET and method of making same |
Nov. 30, 2004 |
| 6815761 |
Semiconductor integrated circuit device |
Nov. 9, 2004 |
| 6803288 |
Method of manufacturing field effect transistor |
Oct. 12, 2004 |
| 6800909 |
Semiconductor device and method of manufacturing the same |
Oct. 5, 2004 |
| 6790754 |
Methods for manufacturing a semiconductor device |
Sep. 14, 2004 |
| 6784035 |
Field effect transistor having source and/or drain forming Schottky or Schottky-like contact with strained semiconductor substrate |
Aug. 31, 2004 |
| 6770941 |
Semiconductor device and method of manufacturing a semiconductor device |
Aug. 3, 2004 |
| 6768171 |
High-voltage transistor with JFET conduction channels |
Jul. 27, 2004 |
| 6764910 |
Structure of semiconductor device and method for manufacturing the same |
Jul. 20, 2004 |
| 6762448 |
FinFET device with multiple fin structures |
Jul. 13, 2004 |
| 6762104 |
Method for fabricating semiconductor device with improved refresh characteristics |
Jul. 13, 2004 |
| 6759289 |
Method of fabricating a high-voltage transistor |
Jul. 6, 2004 |
| 6756619 |
Semiconductor constructions |
Jun. 29, 2004 |
| 6744103 |
Short-channel schottky-barrier MOSFET device and manufacturing method |
Jun. 1, 2004 |
| 6727146 |
Semiconductor device and method of manufacturing thereof |
Apr. 27, 2004 |
| 6727558 |
Channel isolation using dielectric isolation structures |
Apr. 27, 2004 |
| 6724008 |
Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits |
Apr. 20, 2004 |
| 6723661 |
Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits |
Apr. 20, 2004 |
| 6710415 |
Semiconductor integrated circuit having anti-fuse, method of fabricating, and method of writing data in the same |
Mar. 23, 2004 |
| 6703688 |
Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits |
Mar. 9, 2004 |
| 6683345 |
Semiconductor device and method for making the device having an electrically modulated conduction channel |
Jan. 27, 2004 |
| 6680226 |
Methods and devices for optimized digital and analog CMOS transistor performance in deep submicron technology |
Jan. 20, 2004 |
| 6677192 |
Method of fabricating a relaxed silicon germanium platform having planarizing for high speed CMOS electronics and high speed analog circuits |
Jan. 13, 2004 |
| 6653686 |
Structure and method of controlling short-channel effect of very short channel MOSFET |
Nov. 25, 2003 |
| 6646322 |
Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits |
Nov. 11, 2003 |
| 6642589 |
Semiconductor device having pocket and manufacture thereof |
Nov. 4, 2003 |
| 6638832 |
Elimination of narrow device width effects in complementary metal oxide semiconductor (CMOS) devices |
Oct. 28, 2003 |
| 6627963 |
Method for fabricating a merged integrated circuit device |
Sep. 30, 2003 |
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