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Class Information
Number: 257/E21.618
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components or integrated circuits formed in, or on, common substrate (epo) > With subsequent division of substrate into plural individual devices (epo) > To produce devices each consisting of plurality of components, e.g., integrated circuits (epo) > Substrate being semiconductor, using silicon technology (epo) > Field-effect technology (epo) > Mis technology (epo) > With particular manufacturing method of channel, e.g., channel implants, halo or pocket implants, or channel materials (epo)
Description: This subclass is indented under subclass E21.616. This subclass is substantially the same in scope as ECLA classification H01L21/8234C.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7622777 |
Semiconductor device and method for fabricating the same |
Nov. 24, 2009 |
| 7595243 |
Fabrication of semiconductor structure having N-channel channel-junction field-effect transistor |
Sep. 29, 2009 |
| 7585734 |
Method of fabricating multi-gate transistor and multi-gate transistor fabricated thereby |
Sep. 8, 2009 |
| 7585739 |
Semiconductor device and method of fabricating the same |
Sep. 8, 2009 |
| 7566601 |
Method of making a one transistor SOI non-volatile random access memory cell |
Jul. 28, 2009 |
| 7560328 |
Strained Si on multiple materials for bulk or SOI substrates |
Jul. 14, 2009 |
| 7550338 |
Method and structure for forming strained SI for CMOS devices |
Jun. 23, 2009 |
| 7547606 |
Semiconductor device and method of manufacturing the same |
Jun. 16, 2009 |
| 7534690 |
Non-volatile memory with asymmetrical doping profile |
May. 19, 2009 |
| 7521735 |
Multiple layer and crystal plane orientation semiconductor substrate |
Apr. 21, 2009 |
| 7521302 |
Semiconductor device and method of manufacturing the same |
Apr. 21, 2009 |
| 7521301 |
Methods for fabricating integrated circuit field effect transistors including channel-containing fin having regions of high and low doping concentrations |
Apr. 21, 2009 |
| 7488653 |
Semiconductor device and method for implantation of doping agents in a channel |
Feb. 10, 2009 |
| 7485923 |
SOI semiconductor device with improved halo region and manufacturing method of the same |
Feb. 3, 2009 |
| 7452758 |
Process for making FinFET device with body contact and buried oxide junction isolation |
Nov. 18, 2008 |
| 7449373 |
Method of ion implanting for tri-gate devices |
Nov. 11, 2008 |
| 7405128 |
Dotted channel MOSFET and method |
Jul. 29, 2008 |
| 7402497 |
Transistor device having an increased threshold stability without drive current degradation |
Jul. 22, 2008 |
| 7393767 |
Method for implanting a cell channel ion of semiconductor device |
Jul. 1, 2008 |
| 7378321 |
Method for patterning a semiconductor component |
May. 27, 2008 |
| 7348243 |
Semiconductor device and method for fabricating the same |
Mar. 25, 2008 |
| 7329618 |
Ion implanting methods |
Feb. 12, 2008 |
| 7326972 |
Interconnect structure in integrated circuits |
Feb. 5, 2008 |
| 7312136 |
Method of fabricating a wafer with strained channel layers for increased electron and hole mobility for improving device performance |
Dec. 25, 2007 |
| 7300845 |
Method of manufacturing recess type MOS transistor having a dual diode impurity layer structure |
Nov. 27, 2007 |
| 7282414 |
Fabrication methods for compressive strained-silicon and transistors using the same |
Oct. 16, 2007 |
| 7279388 |
Method for manufacturing transistor in semiconductor device |
Oct. 9, 2007 |
| 7253060 |
Gate-all-around type of semiconductor device and method of fabricating the same |
Aug. 7, 2007 |
| 7176095 |
Bi-modal halo implantation |
Feb. 13, 2007 |
| 7144782 |
Simplified masking for asymmetric halo |
Dec. 5, 2006 |
| 7074663 |
Method of making semiconductor device including a first set of windows in a mask with larger ratio of surface area than a second set of windows |
Jul. 11, 2006 |
| 7067878 |
Field effect transistor |
Jun. 27, 2006 |
| 7052945 |
Short-channel Schottky-barrier MOSFET device and manufacturing method |
May. 30, 2006 |
| 7045880 |
Method and apparatus on (110) surfaces of silicon structures with conduction in the <110> direction |
May. 16, 2006 |
| 7045405 |
Semiconductor processing methods of forming integrated circuitry |
May. 16, 2006 |
| 7045449 |
Methods of forming semiconductor constructions |
May. 16, 2006 |
| 7045836 |
Semiconductor structure having a strained region and a method of fabricating same |
May. 16, 2006 |
| 7045874 |
Micromechanical strained semiconductor by wafer bonding |
May. 16, 2006 |
| 7026688 |
Field effect transistors having multiple stacked channels |
Apr. 11, 2006 |
| 7018885 |
Method of manufacturing semiconductor devices |
Mar. 28, 2006 |
| 7015554 |
Semiconductor device and method for fabricating the same |
Mar. 21, 2006 |
| 7005334 |
Zero threshold voltage pFET and method of making same |
Feb. 28, 2006 |
| 7002207 |
Field effect transistors having multiple stacked channels |
Feb. 21, 2006 |
| 6969875 |
Buried channel strained silicon FET using a supply layer created through ion implantation |
Nov. 29, 2005 |
| 6967140 |
Quantum wire gate device and method of making same |
Nov. 22, 2005 |
| 6962857 |
Shallow trench isolation process using oxide deposition and anneal |
Nov. 8, 2005 |
| 6960821 |
Method and apparatus on (110) surfaces of silicon structures with conduction in the <110> direction |
Nov. 1, 2005 |
| 6953728 |
Semiconductor device and method of manufacturing thereof |
Oct. 11, 2005 |
| 6949787 |
Transistor having high dielectric constant gate insulating layer and source and drain forming Schottky contact with substrate |
Sep. 27, 2005 |
| 6946337 |
Method of manufacturing semiconductor devices |
Sep. 20, 2005 |
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