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Class Information
Number: 257/E21.605
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components or integrated circuits formed in, or on, common substrate (epo) > With subsequent division of substrate into plural individual devices (epo) > To produce devices each consisting of plurality of components, e.g., integrated circuits (epo) > Substrate is semiconductor, using sic technology (epo)
Description: This subclass is indented under subclass E21.602. This subclass is substantially the same in scope as ECLA classification H01L21/82H.










Patents under this class:

Patent Number Title Of Patent Date Issued
8450750 Silicon carbide semiconductor device and method of manufacturing thereof May. 28, 2013
8390134 Semiconductor device having surface protective films on bond pad Mar. 5, 2013
8058174 Method for treating semiconductor processing components and components formed thereby Nov. 15, 2011
7851382 Method for manufacturing SiC semiconductor device Dec. 14, 2010
7811943 Process for producing silicon carbide crystals having increased minority carrier lifetimes Oct. 12, 2010
7808003 Silicon carbide semiconductor device Oct. 5, 2010
7682991 Method of manufacturing silicon carbide semiconductor device Mar. 23, 2010
7655514 Method of fabricating a MESFET with a sloped MESA structure Feb. 2, 2010
7608908 Robust deep trench isolation Oct. 27, 2009
7508041 Magnetic memory device having uniform switching characteristics and capable of switching with low current and associated methods Mar. 24, 2009
7488982 Thin film transistor and manufacturing method thereof, and active matrix display device and manufacturing method thereof Feb. 10, 2009
7488692 Etching of substrates of light emitting devices Feb. 10, 2009
7384802 ESD protection device for high voltage Jun. 10, 2008
7381992 Silicon carbide power devices with self-aligned source and well regions Jun. 3, 2008
7029956 Memory system capable of operating at high temperatures and method for fabricating the same Apr. 18, 2006
6940127 Equipment for communication system and semiconductor integrated circuit device Sep. 6, 2005
6844227 Semiconductor devices and method for manufacturing the same Jan. 18, 2005
6737677 Wide bandgap semiconductor device and method for manufacturing the same May. 18, 2004
6709907 Method of fabricating a thin film transistor Mar. 23, 2004
6696702 Silicon carbide semiconductor switching device Feb. 24, 2004
6654604 Equipment for communication system Nov. 25, 2003
6627924 Memory system capable of operating at high temperatures and method for fabricating the same Sep. 30, 2003
6504184 Superior silicon carbide integrated circuits and method of fabricating Jan. 7, 2003
6388271 Semiconductor component May. 14, 2002
6303508 Superior silicon carbide integrated circuits and method of fabricating Oct. 16, 2001
6191458 Silicon carbide integrated circuits Feb. 20, 2001
6096607 Method for manufacturing silicon carbide semiconductor device Aug. 1, 2000
6025609 Laser synthesized ceramic electronic devices and circuits and method for making Feb. 15, 2000
5894151 Semiconductor device having reduced leakage current Apr. 13, 1999
5854494 Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors Dec. 29, 1998
5510630 Non-volatile random access memory cell constructed of silicon carbide Apr. 23, 1996
5385855 Fabrication of silicon carbide integrated circuits Jan. 31, 1995
5208167 Method for producing SOI substrate May. 4, 1993
4997787 Method for fabricating a semiconductor film which is electrically isolated from a substrate Mar. 5, 1991
4994413 Method of manufacturing a semiconductor device having a silicon carbide layer Feb. 19, 1991











 
 
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