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Class Information
Number: 257/E21.603
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components or integrated circuits formed in, or on, common substrate (epo) > With subsequent division of substrate into plural individual devices (epo) > To produce devices each consisting of plurality of components, e.g., integrated circuits (epo) > Substrate is semiconductor, using combination of semiconductor substrates, e.g., diamond, sic, si, group iii-v compound, and/or group ii-vi compound semiconductor substrates (epo)
Description: This subclass is indented under subclass E21.602. This subclass is substantially the same in scope as ECLA classification H01L21/8258.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8704380 Methods for wafer-level packaging of microfeature devices and microfeature devices formed using such methods Apr. 22, 2014
8685848 Manufacturing method of silicon carbide semiconductor device Apr. 1, 2014
8343838 Method of reducing dislocation-induced leakage in a strained-layer field-effect transistor by implanting blocking impurity into the strained-layer Jan. 1, 2013
8232137 Heat conduction for chip stacks and 3-D circuits Jul. 31, 2012
8143147 Methods and systems for forming thin films Mar. 27, 2012
8119513 Method for making cadmium sulfide layer Feb. 21, 2012
8101523 Method of processing of nitride semiconductor wafer, nitride semiconductor wafer, method of producing nitride semiconductor device and nitride semiconductor device Jan. 24, 2012
8097530 Method for manufacturing SIC semiconductor device Jan. 17, 2012
8058174 Method for treating semiconductor processing components and components formed thereby Nov. 15, 2011
8039301 Gate after diamond transistor Oct. 18, 2011
7981817 Method for manufacturing semiconductor device using multiple ion implantation masks Jul. 19, 2011
7875952 Method of transistor level heterogeneous integration and system Jan. 25, 2011
7868335 Modulation doped super-lattice sub-collector for high-performance HBTs and BJTs Jan. 11, 2011
7808003 Silicon carbide semiconductor device Oct. 5, 2010
7807505 Methods for wafer-level packaging of microfeature devices and microfeature devices formed using such methods Oct. 5, 2010
7741678 Semiconductor substrates having useful and transfer layers Jun. 22, 2010
7727340 Inclusion of nitrogen at the silicon dioxide-silicon carbide interface for passivation of interface defects Jun. 1, 2010
7700420 Integrated circuit with different channel materials for P and N channel transistors and method therefor Apr. 20, 2010
7655537 Semiconductor substrates having useful and transfer layers Feb. 2, 2010
7602070 Room temperature metal direct bonding Oct. 13, 2009
7598107 Semi-sacrificial mold for diamond structures Oct. 6, 2009
7534685 Method for fabrication of a capacitor, and a monolithically integrated circuit comprising such a capacitor May. 19, 2009
7498191 Semiconductor-on-diamond devices and associated methods Mar. 3, 2009
7465991 Semiconductor substrates having useful and transfer layers Dec. 16, 2008
7381992 Silicon carbide power devices with self-aligned source and well regions Jun. 3, 2008
7361538 Transistors and methods of manufacture thereof Apr. 22, 2008
7259409 Thin film device and its fabrication method Aug. 21, 2007
7125786 Method of forming vias in silicon carbide and resulting devices and circuits Oct. 24, 2006
7067856 Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same Jun. 27, 2006
7019332 Fabrication of a wavelength locker within a semiconductor structure Mar. 28, 2006
7009209 Silicon carbide and related wide-bandgap transistors on semi-insulating epitaxy for high-speed, high-power applications Mar. 7, 2006
6965128 Structure and method for fabricating semiconductor microresonator devices Nov. 15, 2005
6903373 SiC MOSFET for use as a power switch and a method of manufacturing the same Jun. 7, 2005
6855992 Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same Feb. 15, 2005
6714768 Structure and method for fabricating semiconductor structures and polarization modulator devices utilizing the formation of a compliant substrate Mar. 30, 2004
6693033 Method of removing an amorphous oxide from a monocrystalline surface Feb. 17, 2004
6689677 CMOS circuit of GaAs/Ge on Si substrate Feb. 10, 2004
6673667 Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials Jan. 6, 2004
6667519 Mixed technology microcircuits Dec. 23, 2003
6667196 Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method Dec. 23, 2003
6638872 Integration of monocrystalline oxide devices with fully depleted CMOS on non-silicon substrates Oct. 28, 2003
6563143 CMOS circuit of GaAs/Ge on Si substrate May. 13, 2003
6531351 Method for forming a CMOS circuit of GaAS/Ge on Si substrate Mar. 11, 2003
6472694 Microprocessor structure having a compound semiconductor layer Oct. 29, 2002
6462360 Integrated gallium arsenide communications systems Oct. 8, 2002
6392257 Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same May. 21, 2002
6307232 Semiconductor device having lateral high breakdown voltage element Oct. 23, 2001
6274889 Method for forming ohmic electrode, and semiconductor device Aug. 14, 2001
6171936 Method of producing co-planar Si and Ge composite substrate Jan. 9, 2001
6110813 Method for forming an ohmic electrode Aug. 29, 2000

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