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Class Information
Number: 257/E21.595
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture of specific parts of devices (epo) > Interconnections, comprising conductors and dielectrics, for carrying current between separate components within device (epo) > Characterized by formation and post treatment of dielectrics, e.g., planarizing (epo) > Modifying pattern or conductivity of conductive members, e.g., formation of alloys, reduction of contact resistances (epo) > Modifying pattern (epo)
Description: This subclass is indented under subclass E21.591. This subclass is substantially the same in scope as ECLA classification H01L21/768C8L.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.596 Using laser, e.g., laser cutting, laser direct writing, laser repair (epo) 271


Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8492278 Method of forming a plurality of spaced features Jul. 23, 2013
8399970 Semiconductor device attached to island having protrusion Mar. 19, 2013
8310055 Semiconductor devices having narrow conductive line patterns and related methods of forming such semiconductor devices Nov. 13, 2012
8288871 Reduced-stress bump-on-trace (BOT) structures Oct. 16, 2012
8043964 Method for providing electrical connections to spaced conductive lines Oct. 25, 2011
7745237 Pattern forming method and pattern forming system Jun. 29, 2010
7432198 Semiconductor devices and methods of forming interconnection lines therein Oct. 7, 2008
7422972 On chip heating for electrical trimming of polysilicon and polysilicon-silicon-germanium resistors and electrically programmable fuses for integrated circuits Sep. 9, 2008
7393721 Semiconductor chip with metallization levels, and a method for formation in interconnect structures Jul. 1, 2008
7205566 Transistor-level signal cutting method and structure Apr. 17, 2007
7026198 Focused ion beam treatment method and semiconductor device suitable for its implementation Apr. 11, 2006
6991970 Method and apparatus for circuit completion through the use of ball bonds or other connections during the formation of semiconductor device Jan. 31, 2006
6982227 Single and multilevel rework Jan. 3, 2006
6958289 Method of forming metal line in semiconductor device Oct. 25, 2005
6952014 End-point detection for FIB circuit modification Oct. 4, 2005
6903390 Single metal programmability in a customizable integrated circuit device Jun. 7, 2005
6809332 Electronic device and defect repair method thereof Oct. 26, 2004
6794701 Non-volatile memory Sep. 21, 2004
6759894 Method and circuit for controlling fuse blow Jul. 6, 2004
6753253 Method of making wiring and logic corrections on a semiconductor device by use of focused ion beams Jun. 22, 2004
6734511 Auto sensor function chip May. 11, 2004
6692995 Physically deposited layer to electrically connect circuit edit connection targets Feb. 17, 2004
6674168 Single and multilevel rework Jan. 6, 2004
6653240 FIB/RIE method for in-line circuit modification of microelectronic chips containing organic dielectric Nov. 25, 2003
6620694 Method of making non volatile memory with a protective metal line Sep. 16, 2003
6589860 System and method for calibrating electron beam defect inspection tool Jul. 8, 2003
6582579 Methods for repairing defects on a semiconductor substrate Jun. 24, 2003
6580072 Method for performing failure analysis on copper metallization Jun. 17, 2003
6559544 Programmable interconnect for semiconductor devices May. 6, 2003
6555204 Method of preventing bridging between polycrystalline micro-scale features Apr. 29, 2003
6528416 Semiconductor device and method of making utilizing hemispherical grain silicon technology Mar. 4, 2003
6495443 Method of re-working copper damascene wafers Dec. 17, 2002
6468917 Method for modifying a C4 semiconductor device Oct. 22, 2002
6459136 Single metal programmability in a customizable integrated circuit device Oct. 1, 2002
6455423 Direct writing of low carbon conductive material Sep. 24, 2002
6433403 Integrated circuit having temporary conductive path structure and method for forming the same Aug. 13, 2002
6434063 Method of repairing semiconductor memory, electron-beam memory repairing apparatus and redundancy memory circuit to which the method of repairing semiconductor memory is applicable Aug. 13, 2002
6420785 Bus line wiring structure in a semiconductor device and method of manufacturing the same Jul. 16, 2002
6388334 System and method for circuit rebuilding via backside access May. 14, 2002
6359325 Method of forming nano-scale structures from polycrystalline materials and nano-scale structures formed thereby Mar. 19, 2002
6346748 Electronic circuit structure with photoresist layer that has non-precision openings formed by a laser Feb. 12, 2002
6340601 Method for reworking copper metallurgy in semiconductor devices Jan. 22, 2002
6323076 Integrated circuit having temporary conductive path structure and method for forming the same Nov. 27, 2001
6309798 Lithographical process for production of nanostructures on surfaces Oct. 30, 2001
6309897 Method and apparatus providing a circuit edit structure through the back side of an integrated circuit die Oct. 30, 2001
6291281 Method of fabricating protection structure Sep. 18, 2001
6274934 Semiconductor device and method of manufacturing thereof Aug. 14, 2001
6268608 Method and apparatus for selective in-situ etching of inter dielectric layers Jul. 31, 2001
6261850 Direct writing of low carbon conductive material Jul. 17, 2001
6245610 Method of protecting a well at a floating stage Jun. 12, 2001

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