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Class Information
Number: 257/E21.59
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture of specific parts of devices (epo) > Interconnections, comprising conductors and dielectrics, for carrying current between separate components within device (epo) > Characterized by formation and post treatment of dielectrics, e.g., planarizing (epo) > Local interconnects; local pads (epo)
Description: This subclass is indented under subclass E21.582. This subclass is substantially the same in scope as ECLA classification H01L21/768C10.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 5682052 |
Method for forming isolated intra-polycrystalline silicon structure |
Oct. 28, 1997 |
| 5672901 |
Structure for interconnecting different polysilicon zones on semiconductor substrates for integrated circuits |
Sep. 30, 1997 |
| 5670424 |
Method for making local interconnect structure |
Sep. 23, 1997 |
| 5668065 |
Process for simultaneous formation of silicide-based self-aligned contacts and local interconnects |
Sep. 16, 1997 |
| 5654575 |
TiSi.sub.2 /TiN clad interconnect technology |
Aug. 5, 1997 |
| 5648287 |
Method of salicidation for deep quarter micron LDD MOSFET devices |
Jul. 15, 1997 |
| 5633196 |
Method of forming a barrier and landing pad structure in an integrated circuit |
May. 27, 1997 |
| 5629235 |
Method for forming damage-free buried contact |
May. 13, 1997 |
| 5627094 |
Stacked container capacitor using chemical mechanical polishing |
May. 6, 1997 |
| 5621232 |
Semiconductor device including a local interconnection between an interconnection layer and an adjoining impurity region |
Apr. 15, 1997 |
| 5612558 |
Hemispherical grained silicon on refractory metal nitride |
Mar. 18, 1997 |
| 5605864 |
Method for forming a semiconductor buried contact with a removable spacer |
Feb. 25, 1997 |
| 5604371 |
Semiconductor device with an insulation film having an end covered by a conductive film |
Feb. 18, 1997 |
| 5602055 |
Method of manufacturing a semiconductor device incorporating a selectively deposited contact |
Feb. 11, 1997 |
| 5600170 |
Interconnection structure of semiconductor device |
Feb. 4, 1997 |
| 5596215 |
Method to improve buried contact resistance |
Jan. 21, 1997 |
| 5589417 |
TiSi.sub.2 /TiN clad interconnect technology |
Dec. 31, 1996 |
| 5581124 |
Semiconductor device having wiring and contact structure |
Dec. 3, 1996 |
| 5573969 |
Method for fabrication of CMOS devices having minimized drain contact area |
Nov. 12, 1996 |
| 5567644 |
Method of making a resistor |
Oct. 22, 1996 |
| 5563098 |
Buried contact oxide etch with poly mask procedure |
Oct. 8, 1996 |
| 5563762 |
Capacitor for an integrated circuit and method of formation thereof, and a method of adding on-chip capacitors to an integrated circuit |
Oct. 8, 1996 |
| 5558762 |
Portable water filter and valve assembly |
Sep. 24, 1996 |
| 5556507 |
Multifunctional contactless interconnect technology |
Sep. 17, 1996 |
| 5554549 |
Salicide process for FETs |
Sep. 10, 1996 |
| 5550085 |
Method for making a buried contact |
Aug. 27, 1996 |
| 5547890 |
DRAM cell with a cradle-type capacitor |
Aug. 20, 1996 |
| 5545584 |
Unified contact plug process for static random access memory (SRAM) having thin film transistors |
Aug. 13, 1996 |
| 5543361 |
Process for forming titanium silicide local interconnect |
Aug. 6, 1996 |
| 5541434 |
Semiconductor device incorporating a contact for electrically connecting adjacent portions within the semiconductor device |
Jul. 30, 1996 |
| 5536682 |
Method for manufacturing a semiconductor device |
Jul. 16, 1996 |
| 5536683 |
Method for interconnecting semiconductor devices |
Jul. 16, 1996 |
| 5530294 |
Semiconductor contact that partially overlaps a conductive line pattern and a method of manufacturing same |
Jun. 25, 1996 |
| 5525544 |
Semiconductor device with a MOS structure and a manufacturing method thereof |
Jun. 11, 1996 |
| 5525552 |
Method for fabricating a MOSFET device with a buried contact |
Jun. 11, 1996 |
| 5516726 |
Method of manufacturing local interconnection for semiconductors |
May. 14, 1996 |
| 5498569 |
Layered local interconnect compatible with integrated circuit ferroelectric capacitors |
Mar. 12, 1996 |
| 5493132 |
Integrated circuit contact barrier formation with ion implant |
Feb. 20, 1996 |
| 5491355 |
Self-aligned contact formation |
Feb. 13, 1996 |
| 5489797 |
Local interconnect structure |
Feb. 6, 1996 |
| 5487833 |
Water filter with adjustable inlet hose assembly |
Jan. 30, 1996 |
| 5483104 |
Self-aligning contact and interconnect structure |
Jan. 9, 1996 |
| 5478771 |
Method of forming local interconnect structure without P-N junction between active elements |
Dec. 26, 1995 |
| 5478779 |
Electrically conductive projections and semiconductor processing method of forming same |
Dec. 26, 1995 |
| 5477074 |
Semiconductor structure using local planarization with self-aligned transistors |
Dec. 19, 1995 |
| RE35111 |
Local interconnect process for integrated circuits |
Dec. 5, 1995 |
| 5460983 |
Method for forming isolated intra-polycrystalline silicon structures |
Oct. 24, 1995 |
| 5459688 |
Semiconductor memory cell and fabrication process |
Oct. 17, 1995 |
| 5453400 |
Method and structure for interconnecting different polysilicon zones on semiconductor substrates for integrated circuits |
Sep. 26, 1995 |
| 5443996 |
Process for forming titanium silicide local interconnect |
Aug. 22, 1995 |
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