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Class Information
Number: 257/E21.59
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture of specific parts of devices (epo) > Interconnections, comprising conductors and dielectrics, for carrying current between separate components within device (epo) > Characterized by formation and post treatment of dielectrics, e.g., planarizing (epo) > Local interconnects; local pads (epo)
Description: This subclass is indented under subclass E21.582. This subclass is substantially the same in scope as ECLA classification H01L21/768C10.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 6046490 |
Semiconductor device having a capacitor dielectric element and wiring layers |
Apr. 4, 2000 |
| 6043129 |
High density MOSFET with raised source and drain regions |
Mar. 28, 2000 |
| 6043154 |
Method for manufacturing charge storage electrode |
Mar. 28, 2000 |
| 6040223 |
Method for making improved polysilicon FET gate electrodes having composite sidewall spacers using a trapezoidal-shaped insulating layer for more reliable integrated circuits |
Mar. 21, 2000 |
| 6040619 |
Semiconductor device including antireflective etch stop layer |
Mar. 21, 2000 |
| 6037244 |
Method of manufacturing a semiconductor device using advanced contact formation |
Mar. 14, 2000 |
| 6037246 |
Method of making a contact structure |
Mar. 14, 2000 |
| 6034392 |
Semiconductor device having capacitor |
Mar. 7, 2000 |
| 6034396 |
Ultra-short channel recessed gate MOSFET with a buried contact |
Mar. 7, 2000 |
| 6034401 |
Local interconnection process for preventing dopant cross diffusion in shared gate electrodes |
Mar. 7, 2000 |
| 6034419 |
Semiconductor device with a tungsten contact |
Mar. 7, 2000 |
| 6030860 |
Elevated substrate formation and local interconnect integrated fabrication |
Feb. 29, 2000 |
| 6030867 |
Method of fabricating a Fin/HSG DRAM cell capacitor |
Feb. 29, 2000 |
| 6025235 |
Short channel transistor having resistive gate extensions |
Feb. 15, 2000 |
| 6025246 |
Methods for fabricating microelectronic capacitor structures |
Feb. 15, 2000 |
| 6025635 |
Short channel transistor having resistive gate extensions |
Feb. 15, 2000 |
| 6022774 |
Method for production of semiconductor device |
Feb. 8, 2000 |
| 6022782 |
Method for forming integrated circuit transistors using sacrificial spacer |
Feb. 8, 2000 |
| 6022794 |
Method of manufacturing a buried contact in a static random access memory |
Feb. 8, 2000 |
| 6022799 |
Methods for making a semiconductor device with improved hot carrier lifetime |
Feb. 8, 2000 |
| 6020267 |
Method for forming local interconnect metal structures via the addition of a titanium nitride anti-reflective coating |
Feb. 1, 2000 |
| 6018180 |
Transistor formation with LI overetch immunity |
Jan. 25, 2000 |
| 6018185 |
Semiconductor device with element isolation film |
Jan. 25, 2000 |
| 6018195 |
MOS gate structure semiconductor device |
Jan. 25, 2000 |
| 6015727 |
Damascene formation of borderless contact MOS transistors |
Jan. 18, 2000 |
| 6015730 |
Integration of SAC and salicide processes by combining hard mask and poly definition |
Jan. 18, 2000 |
| 6013547 |
Process for creating a butt contact opening for a self-aligned contact structure |
Jan. 11, 2000 |
| 6013931 |
Semiconductor device and method for producing the same |
Jan. 11, 2000 |
| 6010953 |
Method for forming a semiconductor buried contact with a removable spacer |
Jan. 4, 2000 |
| 6008082 |
Method of making a resistor, method of making a diode, and SRAM circuitry and other integrated circuitry |
Dec. 28, 1999 |
| 6008083 |
Precision analog metal-metal capacitor |
Dec. 28, 1999 |
| 6008097 |
MOS transistor of semiconductor device and method of manufacturing the same |
Dec. 28, 1999 |
| 6008125 |
Method of eliminating buried contact resistance in integrated circuits |
Dec. 28, 1999 |
| 6008141 |
Semiconductor device and fabrication method thereof |
Dec. 28, 1999 |
| 6004840 |
Method of fabricating a semiconductor device comprising a MOS portion and a bipolar portion |
Dec. 21, 1999 |
| 6004869 |
Method for making a low resistivity electrode having a near noble metal |
Dec. 21, 1999 |
| 6001674 |
Method of eliminating buried contact trench in SRAM devices |
Dec. 14, 1999 |
| 6001697 |
Process for manufacturing semiconductor devices having raised doped regions |
Dec. 14, 1999 |
| 6001717 |
Method of making local interconnections for dynamic random access memory (DRAM) circuits with reduced contact resistance and reduced mask set |
Dec. 14, 1999 |
| 5998254 |
Method for creating a conductive connection between at least two zones of a first conductivity type |
Dec. 7, 1999 |
| 5998269 |
Technology for high performance buried contact and tungsten polycide gate integration |
Dec. 7, 1999 |
| 5989957 |
Process for fabricating semiconductor memory device with high data retention including silicon oxynitride etch stop layer formed at high temperature with low hydrogen ion concentration |
Nov. 23, 1999 |
| 5990507 |
Semiconductor device having ferroelectric capacitor structures |
Nov. 23, 1999 |
| 5990508 |
Ferroelectric memory |
Nov. 23, 1999 |
| 5990524 |
Silicon oxime spacer for preventing over-etching during local interconnect formation |
Nov. 23, 1999 |
| 5985711 |
Method of fabricating semiconductor device |
Nov. 16, 1999 |
| 5985713 |
Method of forming iridium oxide local interconnect |
Nov. 16, 1999 |
| 5986312 |
Field effect semiconductor device having improved connections |
Nov. 16, 1999 |
| 5986328 |
Buried contact architecture |
Nov. 16, 1999 |
| 5981372 |
Method for manufacturing a semiconductor device |
Nov. 9, 1999 |
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