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Class Information
Number: 257/E21.59
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture of specific parts of devices (epo) > Interconnections, comprising conductors and dielectrics, for carrying current between separate components within device (epo) > Characterized by formation and post treatment of dielectrics, e.g., planarizing (epo) > Local interconnects; local pads (epo)
Description: This subclass is indented under subclass E21.582. This subclass is substantially the same in scope as ECLA classification H01L21/768C10.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 6174822 |
Semiconductor device and method for fabricating the same |
Jan. 16, 2001 |
| 6168959 |
Method of forming a ferroelectric memory device |
Jan. 2, 2001 |
| 6168990 |
Method for fabricating Dram cell capacitor |
Jan. 2, 2001 |
| 6168991 |
DRAM capacitor including Cu plug and Ta barrier and method of forming |
Jan. 2, 2001 |
| 6169005 |
Formation of junctions by diffusion from a doped amorphous silicon film during silicidation |
Jan. 2, 2001 |
| 6169020 |
Methods of fabricating integrated circuits including metal silicide contacts extending between a gate electrode and a source/drain region |
Jan. 2, 2001 |
| 6165840 |
Method for fabricating a DRAM cell capacitor including forming first multilayer insulator, forming conductive plug, forming second insulator, and etching second and first insulators to form th |
Dec. 26, 2000 |
| 6165865 |
Method of fabricating dual cylindrical capacitor |
Dec. 26, 2000 |
| 6165900 |
Method for manufacturing semiconductor device |
Dec. 26, 2000 |
| 6166428 |
Formation of a barrier layer for tungsten damascene interconnects by nitrogen implantation of amorphous silicon or polysilicon |
Dec. 26, 2000 |
| 6162649 |
Method of manufacturing ferroelectric memory device |
Dec. 19, 2000 |
| 6162690 |
Methods of forming field effect transistors having self-aligned intermediate source and drain contacts |
Dec. 19, 2000 |
| 6159839 |
Method for fabricating borderless and self-aligned polysilicon and metal contact landing plugs for multilevel interconnections |
Dec. 12, 2000 |
| 6159843 |
Method of fabricating landing pad |
Dec. 12, 2000 |
| 6160296 |
Titanium nitride interconnects |
Dec. 12, 2000 |
| 6157068 |
Semiconductor device with local interconnect of metal silicide |
Dec. 5, 2000 |
| 6156630 |
Titanium boride gate electrode and interconnect and methods regarding same |
Dec. 5, 2000 |
| 6156632 |
Method of forming polycide structures |
Dec. 5, 2000 |
| 6156634 |
Method of fabricating local interconnect |
Dec. 5, 2000 |
| 6153498 |
Method of fabricating a buried contact |
Nov. 28, 2000 |
| 6150216 |
Method for forming an electrode of semiconductor device capacitor |
Nov. 21, 2000 |
| 6150228 |
Method of manufacturing an SRAM with increased resistance length |
Nov. 21, 2000 |
| 6150266 |
Local interconnect formed using silicon spacer |
Nov. 21, 2000 |
| 6150267 |
Method of manufacturing buried contact in SRAM |
Nov. 21, 2000 |
| 6146940 |
Method of fabricating a dynamic random access memory device |
Nov. 14, 2000 |
| 6146954 |
Minimizing transistor size in integrated circuits |
Nov. 14, 2000 |
| 6146981 |
Method of manufacturing buried contact in SRAM |
Nov. 14, 2000 |
| 6147406 |
Electrical connection between an electrically conductive line and a node location, and integrated circuitry |
Nov. 14, 2000 |
| 6143593 |
Elevated channel MOSFET |
Nov. 7, 2000 |
| 6143595 |
Method for forming buried contact |
Nov. 7, 2000 |
| 6143602 |
Methods of forming memory device storage capacitors using protruding contact plugs |
Nov. 7, 2000 |
| RE36938 |
Method of forming a landing pad structure in an integrated circuit |
Oct. 31, 2000 |
| 6140171 |
FET device containing a conducting sidewall spacer for local interconnect and method for its fabrication |
Oct. 31, 2000 |
| 6140216 |
Post etch silicide formation using dielectric etchback after global planarization |
Oct. 31, 2000 |
| 6140672 |
Ferroelectric field effect transistor having a gate electrode being electrically connected to the bottom electrode of a ferroelectric capacitor |
Oct. 31, 2000 |
| 6136701 |
Contact structure for semiconductor device and the manufacturing method thereof |
Oct. 24, 2000 |
| 6137126 |
Method to reduce gate-to-local interconnect capacitance using a low dielectric constant material for LDD spacer |
Oct. 24, 2000 |
| 6137175 |
Semiconductor device with multi-layer wiring |
Oct. 24, 2000 |
| 6133104 |
Method of eliminating buried contact trench in MOSFET devices with self-aligned silicide including a silicon connection to the buried contact region which comprises a doped silicon sidewall |
Oct. 17, 2000 |
| 6133620 |
Semiconductor device and process for fabricating the same |
Oct. 17, 2000 |
| 6130102 |
Method for forming semiconductor device including a dual inlaid structure |
Oct. 10, 2000 |
| 6130121 |
Method for fabricating a transistor |
Oct. 10, 2000 |
| 6127214 |
Contact gate structure and method |
Oct. 3, 2000 |
| 6127260 |
Method of forming a tee shaped tungsten plug structure to avoid high aspect ratio contact holes in embedded DRAM devices |
Oct. 3, 2000 |
| 6127270 |
Methods of forming refractory metal silicide components and methods of restricting silicon surface migration of a silicon structure |
Oct. 3, 2000 |
| 6127706 |
Trench-free buried contact for SRAM devices |
Oct. 3, 2000 |
| 6127712 |
Mosfet with buried contact and air-gap gate structure |
Oct. 3, 2000 |
| 6124182 |
Method of forming stacked capacitor |
Sep. 26, 2000 |
| 6120915 |
Methods of forming refractory metal silicide components and methods of restricting silicon surface migration of a silicon structure |
Sep. 19, 2000 |
| 6121082 |
Method of fabricating DRAM with novel landing pad process |
Sep. 19, 2000 |
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