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Class Information
Number: 257/E21.59
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture of specific parts of devices (epo) > Interconnections, comprising conductors and dielectrics, for carrying current between separate components within device (epo) > Characterized by formation and post treatment of dielectrics, e.g., planarizing (epo) > Local interconnects; local pads (epo)
Description: This subclass is indented under subclass E21.582. This subclass is substantially the same in scope as ECLA classification H01L21/768C10.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 6291858 |
Multistack 3-dimensional high density semiconductor device and method for fabrication |
Sep. 18, 2001 |
| 6291888 |
Contact structure and process for formation |
Sep. 18, 2001 |
| 6292352 |
Thin film capacitor |
Sep. 18, 2001 |
| 6287923 |
Method of forming a MOS transistor |
Sep. 11, 2001 |
| 6287939 |
Method for fabricating a shallow trench isolation which is not susceptible to buried contact trench formation |
Sep. 11, 2001 |
| 6287953 |
Minimizing transistor size in integrated circuits |
Sep. 11, 2001 |
| 6287973 |
Method for forming interconnection structure |
Sep. 11, 2001 |
| 6284614 |
Method of manufacturing semiconductor device in which damage to gate insulating film can be reduced |
Sep. 4, 2001 |
| 6277685 |
Method of forming a node contact hole on a semiconductor wafer |
Aug. 21, 2001 |
| 6277717 |
Fabrication method for a buried bit line |
Aug. 21, 2001 |
| 6277727 |
Method of forming a landing pad on a semiconductor wafer |
Aug. 21, 2001 |
| 6274409 |
Method for making a semiconductor device |
Aug. 14, 2001 |
| 6274421 |
Method of making metal gate sub-micron MOS transistor |
Aug. 14, 2001 |
| 6274424 |
Method for forming a capacitor electrode |
Aug. 14, 2001 |
| 6274427 |
Method of manufacturing a DRAM capacitor |
Aug. 14, 2001 |
| 6274471 |
Method for making high-aspect-ratio contacts on integrated circuits using a borderless pre-opened hard-mask technique |
Aug. 14, 2001 |
| 6271082 |
Method of fabricating a mixed circuit capacitor |
Aug. 7, 2001 |
| 6271083 |
Method of forming a dram crown capacitor |
Aug. 7, 2001 |
| 6271084 |
Method of fabricating a metal-insulator-metal (MIM), capacitor structure using a damascene process |
Aug. 7, 2001 |
| 6271087 |
Method for forming self-aligned contacts and local interconnects using self-aligned local interconnects |
Aug. 7, 2001 |
| 6271117 |
Process for a nail shaped landing pad plug |
Aug. 7, 2001 |
| 6271570 |
Trench-free buried contact |
Aug. 7, 2001 |
| 6271596 |
Damascene capacitors for integrated circuits |
Aug. 7, 2001 |
| 6268252 |
Method of forming self-aligned contact pads on electrically conductive lines |
Jul. 31, 2001 |
| 6268292 |
Methods for use in formation of titanium nitride interconnects |
Jul. 31, 2001 |
| 6265261 |
Semiconductor device and fabricating method therefor in which a netride layer in a capacitor is formed in a shortened time period |
Jul. 24, 2001 |
| 6265262 |
Semiconductor device and method of fabricating the same |
Jul. 24, 2001 |
| 6261908 |
Buried local interconnect |
Jul. 17, 2001 |
| 6261935 |
Method of forming contact to polysilicon gate for MOS devices |
Jul. 17, 2001 |
| 6261940 |
Semiconductor method of making electrical connection between an electrically conductive line and a node location, and integrated circuitry |
Jul. 17, 2001 |
| 6258683 |
Local interconnection arrangement with reduced junction leakage and method of forming same |
Jul. 10, 2001 |
| 6258708 |
Method of fabricating gate contact pods, load lines and wiring structures using a minimum number of etching steps |
Jul. 10, 2001 |
| 6255701 |
Semiconductor device containing local interconnection and method of manufacturing the same |
Jul. 3, 2001 |
| 6255161 |
Method of forming a capacitor and a contact plug |
Jul. 3, 2001 |
| 6255213 |
Method of forming a structure upon a semiconductive substrate |
Jul. 3, 2001 |
| 6255224 |
Method of forming contact for semiconductor device |
Jul. 3, 2001 |
| 6251769 |
Method of manufacturing contact pad |
Jun. 26, 2001 |
| 6248622 |
Fabrication method for ultra short channel device comprising self-aligned landing pad |
Jun. 19, 2001 |
| 6248962 |
Electrically conductive projections of the same material as their substrate |
Jun. 19, 2001 |
| 6245633 |
Fabrication method for a double-side double-crown stacked capacitor |
Jun. 12, 2001 |
| 6245664 |
Method and system of interconnecting conductive elements in an integrated circuit |
Jun. 12, 2001 |
| 6246116 |
Buried wiring line |
Jun. 12, 2001 |
| 6242299 |
Barrier layer to protect a ferroelectric capacitor after contact has been made to the capacitor electrode |
Jun. 5, 2001 |
| 6242302 |
Semiconductor processing methods of forming contact openings, methods of forming electrical connections and interconnections, and integrated circuitry |
Jun. 5, 2001 |
| 6242316 |
Semiconductor device having capacitor and method of fabricating the same |
Jun. 5, 2001 |
| 6238971 |
Capacitor structures, DRAM cell structures, and integrated circuitry, and methods of forming capacitor structures, integrated circuitry and DRAM cell structures |
May. 29, 2001 |
| 6238974 |
Method of forming DRAM capacitors with a native oxide etch-stop |
May. 29, 2001 |
| 6235542 |
Ferroelectric memory device and method for fabricating the same |
May. 22, 2001 |
| 6235571 |
Uniform dielectric layer and method to form same |
May. 22, 2001 |
| 6235575 |
Semiconductor device and method for manufacturing same |
May. 22, 2001 |
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