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Class Information
Number: 257/E21.59
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture of specific parts of devices (epo) > Interconnections, comprising conductors and dielectrics, for carrying current between separate components within device (epo) > Characterized by formation and post treatment of dielectrics, e.g., planarizing (epo) > Local interconnects; local pads (epo)
Description: This subclass is indented under subclass E21.582. This subclass is substantially the same in scope as ECLA classification H01L21/768C10.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 6352890 |
Method of forming a memory cell with self-aligned contacts |
Mar. 5, 2002 |
| 6352899 |
Raised silicide source/drain MOS transistors having enlarged source/drain contact regions and method |
Mar. 5, 2002 |
| 6350665 |
Semiconductor structure and method of making contacts and source and/or drain junctions in a semiconductor device |
Feb. 26, 2002 |
| 6351016 |
Technology for high performance buried contact and tungsten polycide gate integration |
Feb. 26, 2002 |
| 6351038 |
Integrated circuitry |
Feb. 26, 2002 |
| 6348377 |
Method of manufacturing storage electrode in semiconductor device |
Feb. 19, 2002 |
| 6340834 |
Method of making a resistor, method of making a diode, and SRAM circuitry and other integrated circuitry |
Jan. 22, 2002 |
| 6340835 |
Method of making a resistor, method of making a diode, and SRAM circuitry and other integrated circuitry |
Jan. 22, 2002 |
| 6337267 |
Method for fabricating a semiconductor memory device and the structure thereof |
Jan. 8, 2002 |
| 6337278 |
Technique for forming a borderless overlapping gate and diffusion contact structure in integrated circuit device processing |
Jan. 8, 2002 |
| 6335250 |
Semiconductor device and method for the manufacture thereof |
Jan. 1, 2002 |
| 6335270 |
Semiconductor processing methods of forming contact openings, methods of forming memory circuitry, methods of forming electrical connections, and methods of forming dynamic random access memor |
Jan. 1, 2002 |
| 6333254 |
Methods of forming a local interconnect method of fabricating integrated circuitry comprising an SRAM cell having a local interconnect and having circuitry peripheral to the SRAM cell and meth |
Dec. 25, 2001 |
| 6333535 |
Semiconductor device |
Dec. 25, 2001 |
| 6333536 |
Depletion compensated polysilicon electrodes |
Dec. 25, 2001 |
| 6329241 |
Methods for producing capacitor-node contact plugs of dynamic random-access memory |
Dec. 11, 2001 |
| 6329680 |
Semiconductor integrated circuit device and process for manufacturing the same |
Dec. 11, 2001 |
| 6329686 |
Method of fabricating conductive straps to interconnect contacts to corresponding digit lines by employing an angled sidewall implant and semiconductor devices fabricated thereby |
Dec. 11, 2001 |
| 6329703 |
Contact between a monocrystalline silicon region and a polycrystalline silicon structure and method for producing such a contact |
Dec. 11, 2001 |
| 6329720 |
Tungsten local interconnect for silicon integrated circuit structures, and method of making same |
Dec. 11, 2001 |
| 6326671 |
Semiconductor memory device and method for manufacturing the same |
Dec. 4, 2001 |
| 6322954 |
Wet inorganic ammonia etch of organically masked silicon-containing material |
Nov. 27, 2001 |
| 6323084 |
Semiconductor device capacitor and method of manufacturing the same |
Nov. 27, 2001 |
| 6323087 |
Semiconductor processing methods of forming contact openings, methods of forming electrical connections and interconnections, and integrated circuitry |
Nov. 27, 2001 |
| 6319803 |
Method of fabricating semiconductor device |
Nov. 20, 2001 |
| 6320235 |
Apparatus having low resistance angled implant regions |
Nov. 20, 2001 |
| 6320241 |
Circuitry and method of forming the same |
Nov. 20, 2001 |
| 6316312 |
Capacitor structures, DRAM cell structures, methods of forming capacitors, methods of forming DRAM cells, and integrated circuits incorporating capacitor structures and DRAM cell structures |
Nov. 13, 2001 |
| 6316352 |
Method of fabricating a bottom electrode |
Nov. 13, 2001 |
| 6313005 |
Method of manufacturing semiconductor device |
Nov. 6, 2001 |
| 6313510 |
Integrated circuits including metal silicide contacts extending between a gate electrode and a source/drain region |
Nov. 6, 2001 |
| 6309928 |
Split-gate flash cell |
Oct. 30, 2001 |
| 6306713 |
Method for forming self-aligned contacts and local interconnects for salicided gates using a secondary spacer |
Oct. 23, 2001 |
| 6306737 |
Method to reduce source-line resistance in flash memory with sti |
Oct. 23, 2001 |
| 6303433 |
Method of fabricating node contact |
Oct. 16, 2001 |
| 6303435 |
Method of fabricating a wide-based box-structured capacitor containing hemi-spherical grains |
Oct. 16, 2001 |
| 6303949 |
Method and system for providing electrical insulation for local interconnect in a logic circuit |
Oct. 16, 2001 |
| 6303952 |
Contact structure with an oxide silicidation barrier |
Oct. 16, 2001 |
| 6299314 |
Semiconductor device with electrical isolation means |
Oct. 9, 2001 |
| 6300189 |
Method for forming a metal capacitor |
Oct. 9, 2001 |
| 6300229 |
Semiconductor device and method of manufacturing the same |
Oct. 9, 2001 |
| 6300666 |
Method for forming a frontside contact to the silicon substrate of a SOI wafer in the presence of planarized contact dielectrics |
Oct. 9, 2001 |
| 6297144 |
Damascene local interconnect process |
Oct. 2, 2001 |
| 6297167 |
In-situ etch of multiple layers during formation of local interconnects |
Oct. 2, 2001 |
| 6297525 |
Capacitor structures, DRAM cell structures, and integrated circuitry |
Oct. 2, 2001 |
| 6294464 |
Low resistance metal silicide local interconnects and a method of making |
Sep. 25, 2001 |
| 6295195 |
Capacitor having first and second protective films |
Sep. 25, 2001 |
| 6291289 |
Method of forming DRAM trench capacitor with metal layer over hemispherical grain polysilicon |
Sep. 18, 2001 |
| 6291295 |
Method of forming a storage electrode of a capacitor on an ion-implanted isolation layer |
Sep. 18, 2001 |
| 6291848 |
Integrated circuit capacitor including anchored plugs |
Sep. 18, 2001 |
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