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Class Information
Number: 257/E21.59
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture of specific parts of devices (epo) > Interconnections, comprising conductors and dielectrics, for carrying current between separate components within device (epo) > Characterized by formation and post treatment of dielectrics, e.g., planarizing (epo) > Local interconnects; local pads (epo)
Description: This subclass is indented under subclass E21.582. This subclass is substantially the same in scope as ECLA classification H01L21/768C10.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7572650 |
Suppression of localized metal precipitate formation and corresponding metallization depletion in semiconductor processing |
Aug. 11, 2009 |
| 7550838 |
Semiconductor device |
Jun. 23, 2009 |
| 7547969 |
Semiconductor chip with passivation layer comprising metal interconnect and contact pads |
Jun. 16, 2009 |
| 7517785 |
Electronic interconnects and methods of making same |
Apr. 14, 2009 |
| 7498253 |
Local interconnection method and structure for use in semiconductor device |
Mar. 3, 2009 |
| 7488678 |
Method of manufacturing interconnect substrate |
Feb. 10, 2009 |
| 7479688 |
STI stress modification by nitrogen plasma treatment for improving performance in small width devices |
Jan. 20, 2009 |
| 7479415 |
Fabrication method of polycrystalline silicon liquid crystal display device |
Jan. 20, 2009 |
| 7459388 |
Methods of forming dual-damascene interconnect structures using adhesion layers having high internal compressive stresses |
Dec. 2, 2008 |
| 7394028 |
Flexible circuit substrate for flip-chip-on-flex applications |
Jul. 1, 2008 |
| 7378338 |
Method of forming an interconnect structure diffusion barrier with high nitrogen content |
May. 27, 2008 |
| 7358188 |
Method of forming conductive metal silicides by reaction of metal with silicon |
Apr. 15, 2008 |
| 7348270 |
Techniques for forming interconnects |
Mar. 25, 2008 |
| 7329602 |
Wiring structure for integrated circuit with reduced intralevel capacitance |
Feb. 12, 2008 |
| 7329563 |
Method for fabrication of wafer level package incorporating dual compliant layers |
Feb. 12, 2008 |
| 7326610 |
Process options of forming silicided metal gates for advanced CMOS devices |
Feb. 5, 2008 |
| 7316958 |
Masks for fabricating semiconductor devices and methods of forming mask patterns |
Jan. 8, 2008 |
| 7271086 |
Microfeature workpieces and methods of forming a redistribution layer on microfeature workpieces |
Sep. 18, 2007 |
| 7265405 |
Method for fabricating contacts for integrated circuits, and semiconductor component having such contacts |
Sep. 4, 2007 |
| 7262125 |
Method of forming low-resistivity tungsten interconnects |
Aug. 28, 2007 |
| 7259083 |
Local interconnect manufacturing process |
Aug. 21, 2007 |
| 7247562 |
Semiconductor element, semiconductor device and methods for manufacturing thereof |
Jul. 24, 2007 |
| 7217653 |
Interconnects forming method and interconnects forming apparatus |
May. 15, 2007 |
| 7208404 |
Method to reduce Rs pattern dependence effect |
Apr. 24, 2007 |
| 7183188 |
Method for fabricating contact-making connections |
Feb. 27, 2007 |
| 7176554 |
Methods for producing a semiconductor entity |
Feb. 13, 2007 |
| 7173338 |
Suppression of localized metal precipitate formation and corresponding metallization depletion in semiconductor processing |
Feb. 6, 2007 |
| 7160737 |
Method for fabricating semiconductor device |
Jan. 9, 2007 |
| 7138716 |
Addition of metal layers with signal reallocation to a microprocessor for increased frequency and lower power |
Nov. 21, 2006 |
| 7119005 |
Semiconductor local interconnect and contact |
Oct. 10, 2006 |
| 7109068 |
Through-substrate interconnect fabrication methods |
Sep. 19, 2006 |
| 7094687 |
Reduced dry etching lag |
Aug. 22, 2006 |
| 7064026 |
Semiconductor device having shared contact and fabrication method thereof |
Jun. 20, 2006 |
| 7064029 |
Semiconductor memory device and method of producing the same |
Jun. 20, 2006 |
| 7064395 |
Semiconductor device and method for fabricating the same |
Jun. 20, 2006 |
| 7061056 |
High f.sub.MAX deep submicron MOSFET |
Jun. 13, 2006 |
| 7052955 |
Semiconductor memory device and manufacturing method thereof |
May. 30, 2006 |
| 7052983 |
Method of manufacturing a semiconductor device having selective epitaxial silicon layer on contact pads |
May. 30, 2006 |
| 7049648 |
Semiconductor memory device for reducing damage to interlevel dielectric layer and fabrication method thereof |
May. 23, 2006 |
| 7049218 |
Method of fabricating local interconnection using selective epitaxial growth |
May. 23, 2006 |
| 7037778 |
Method for fabricating capacitor in semiconductor memory device |
May. 2, 2006 |
| 7037791 |
Application of single exposure alternating aperture phase shift mask to form sub 0.18 micron polysilicon gates |
May. 2, 2006 |
| 7038281 |
Semiconductor device and method of manufacturing the same |
May. 2, 2006 |
| 7029963 |
Semiconductor damascene trench and methods thereof |
Apr. 18, 2006 |
| 7029966 |
Process options of forming silicided metal gates for advanced CMOS devices |
Apr. 18, 2006 |
| 7026243 |
Methods of forming conductive material silicides by reaction of metal with silicon |
Apr. 11, 2006 |
| 7015087 |
Gate-contact structure and method for forming the same |
Mar. 21, 2006 |
| 7015528 |
Reduced aspect ratio digit line contact process flow used during the formation of a semiconductor device |
Mar. 21, 2006 |
| 7015531 |
FeRAM having bottom electrode connected to storage node and method for forming the same |
Mar. 21, 2006 |
| 7009257 |
Methods of manufacturing integrated circuit devices having reduced contact resistance between a substrate and a contact pad while maintaining separation of the substrate and the contact pad an |
Mar. 7, 2006 |
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