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Class Information
Number: 257/E21.586
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture of specific parts of devices (epo) > Interconnections, comprising conductors and dielectrics, for carrying current between separate components within device (epo) > Characterized by formation and post treatment of dielectrics, e.g., planarizing (epo) > Filling of holes, grooves, vias or trenches with conductive material (epo) > By selective deposition of conductive material in vias, e.g., selective chemical vapor deposition on semiconductor material, plating (epo)
Description: This subclass is indented under subclass E21.585. This subclass is substantially the same in scope as ECLA classification H01L21/768C4B.










Patents under this class:
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Patent Number Title Of Patent Date Issued
5930671 CVD titanium silicide for contract hole plugs Jul. 27, 1999
5914001 In-situ etch of CVD chamber Jun. 22, 1999
5909059 Semiconductor device having contact plug and method for manufacturing the same Jun. 1, 1999
5909637 Copper adhesion to a diffusion barrier surface and method for same Jun. 1, 1999
5895261 Process for making integrated circuit structure comprising local area interconnects formed over semiconductor substrate by selective deposition on seed layer in patterned trench Apr. 20, 1999
5877087 Low temperature integrated metallization process and apparatus Mar. 2, 1999
5874364 Thin film deposition method, capacitor device and method for fabricating the same, and semiconductor device and method for fabricating the same Feb. 23, 1999
5853804 Gas control technique for limiting surging of gas into a CVD chamber Dec. 29, 1998
5834367 Method of manufacturing semiconductor device having a multilayer wiring Nov. 10, 1998
5783485 Process for fabricating a metallized interconnect Jul. 21, 1998
5761802 Multi-layer electrical interconnection method Jun. 9, 1998
5763321 Method of manufacturing semiconductor device utilizing selective CVD method Jun. 9, 1998
5760475 Refractory metal-titanium nitride conductive structures Jun. 2, 1998
5733709 Semiconductor processing method of forming a field effect transistor Mar. 31, 1998
5723028 Electrodeposition apparatus with virtual anode Mar. 3, 1998
5714804 Semiconductor contact structure in integrated semiconductor devices Feb. 3, 1998
5689140 Method for forming studs and interconnects in a multi-layered semiconductor device Nov. 18, 1997
5686358 Method for forming a plug in a semiconductor device Nov. 11, 1997
5683938 Method for filling contact holes with metal by two-step deposition Nov. 4, 1997
5683547 Processing method and apparatus using focused energy beam Nov. 4, 1997
5681613 Filtering technique for CVD chamber process gases Oct. 28, 1997
5677237 Process for removing seams in tungsten plugs Oct. 14, 1997
5674787 Selective electroless copper deposited interconnect plugs for ULSI applications Oct. 7, 1997
5670016 Method for cleaning substrate prior to tungsten deposition Sep. 23, 1997
5670425 Process for making integrated circuit structure comprising local area interconnects formed over semiconductor substrate by selective deposition on seed layer in patterned trench Sep. 23, 1997
5662788 Method for forming a metallization layer Sep. 2, 1997
5660706 Electric field initiated electroless metal deposition Aug. 26, 1997
5654237 Method of manufacturing semiconductor device Aug. 5, 1997
5654245 Implantation of nucleating species for selective metallization and products thereof Aug. 5, 1997
5652180 Method of manufacturing semiconductor device with contact structure Jul. 29, 1997
5637534 Method of manufacturing semiconductor device having multilevel interconnection structure Jun. 10, 1997
5633201 Method for forming tungsten plugs in contact holes of a semiconductor device May. 27, 1997
5620925 Method of manufacturing semiconductor device using a hagolen plasma treatment step Apr. 15, 1997
5618756 Selective WSix deposition Apr. 8, 1997
5614439 Method of making a planar wiring in an insulated groove using alkylaluminum hydride Mar. 25, 1997
5607878 Contact plug forming method Mar. 4, 1997
5599741 Method for making semiconductor device with metal deposited on electron donating surface of gate electrode Feb. 4, 1997
5597746 Method of forming field effect transistors relative to a semiconductor substrate and field effect transistors produced according to the method Jan. 28, 1997
5591486 Method for forming a film on a substrate by activating a reactive gas Jan. 7, 1997
5589425 Process of selective area chemical vapor deposition of metal films Dec. 31, 1996
5580615 Method of forming a conductive film on an insulating region of a substrate Dec. 3, 1996
5539247 Selective metal via plug growth technology for deep sub-micrometer ULSI Jul. 23, 1996
5529953 Method of forming studs and interconnects in a multi-layered semiconductor device Jun. 25, 1996
5504038 Method for selective tungsten sidewall and bottom contact formation Apr. 2, 1996
5492734 Method of forming deposition film Feb. 20, 1996
5486492 Method of forming multilayered wiring structure in semiconductor device Jan. 23, 1996
5476814 Method of manufacturing semiconductor device utilizing selective CVD method Dec. 19, 1995
5474651 Method for filling via holes in a semiconductor layer structure Dec. 12, 1995
5472507 IC wiring connecting method and apparatus Dec. 5, 1995
5470792 Method of manufacturing semiconductor device Nov. 28, 1995

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