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Class Information
Number: 257/E21.586
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture of specific parts of devices (epo) > Interconnections, comprising conductors and dielectrics, for carrying current between separate components within device (epo) > Characterized by formation and post treatment of dielectrics, e.g., planarizing (epo) > Filling of holes, grooves, vias or trenches with conductive material (epo) > By selective deposition of conductive material in vias, e.g., selective chemical vapor deposition on semiconductor material, plating (epo)
Description: This subclass is indented under subclass E21.585. This subclass is substantially the same in scope as ECLA classification H01L21/768C4B.










Patents under this class:
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Patent Number Title Of Patent Date Issued
6905588 Packaging deposition methods Jun. 14, 2005
6905950 Growing copper vias or lines within a patterned resist using a copper seed layer Jun. 14, 2005
6903011 Displacement method to grow cu overburden Jun. 7, 2005
6893957 Method of forming a dual damascene interconnect by selective metal deposition May. 17, 2005
6879044 Structure for contact formation using a silicon-germanium alloy Apr. 12, 2005
6878617 Method of forming copper wire on semiconductor device Apr. 12, 2005
6867473 Plating a conductive material on a dielectric material Mar. 15, 2005
6864175 Method for fabricating integrated circuit arrangements, and associated circuit arrangements, in particular tunnel contact elements Mar. 8, 2005
6858121 Method and apparatus for filling low aspect ratio cavities with conductive material at high rate Feb. 22, 2005
6849927 Forming submicron integrated-circuit wiring from gold, silver, copper, and other metals Feb. 1, 2005
6844259 Method for forming contact plug in semiconductor device Jan. 18, 2005
6841466 Method of selectively making copper using plating technology Jan. 11, 2005
6821890 Method for improving adhesion to copper Nov. 23, 2004
6818537 Method of manufacturing a contact plug for a semiconductor device Nov. 16, 2004
6806572 Structure for contact formation using a silicon-germanium alloy Oct. 19, 2004
6803312 Semiconductor device and method for fabricating the same Oct. 12, 2004
6800898 Integrated circuit configuration and method of fabricating a dram structure with buried bit lines or trench capacitors Oct. 5, 2004
6797558 Methods of forming a capacitor with substantially selective deposite of polysilicon on a substantially crystalline capacitor dielectric layer Sep. 28, 2004
6797620 Method and apparatus for improved electroplating fill of an aperture Sep. 28, 2004
6790723 Semiconductor device and method of manufacturing the same Sep. 14, 2004
6787450 High aspect ratio fill method and resulting structure Sep. 7, 2004
6787460 Methods of forming metal layers in integrated circuit devices using selective deposition on edges of recesses and conductive contacts so formed Sep. 7, 2004
6770558 Selective filling of electrically conductive vias for three dimensional device structures Aug. 3, 2004
6759330 Method of providing a structure using self-aligned features Jul. 6, 2004
6756682 High aspect ratio fill method and resulting structure Jun. 29, 2004
6753254 Method for forming a metallization layer Jun. 22, 2004
6753253 Method of making wiring and logic corrections on a semiconductor device by use of focused ion beams Jun. 22, 2004
6746819 Use of polyimide for adhesive layers, lithographic method for producing microcomponents and method for producing composite material Jun. 8, 2004
6743716 Structures and methods to enhance copper metallization Jun. 1, 2004
6727175 Method of controlling metal formation processes using ion implantation, and system for performing same Apr. 27, 2004
6723645 Method of forming a metal wiring in a semiconductor device Apr. 20, 2004
6724089 Dual damascene interconnect Apr. 20, 2004
6713875 Barrier layer associated with a conductor layer in damascene structures Mar. 30, 2004
6703708 Graded thin films Mar. 9, 2004
6699790 Semiconductor device fabrication method for filling high aspect ratio openings in insulators with aluminum Mar. 2, 2004
6699396 Methods for electroplating large copper interconnects Mar. 2, 2004
6696761 Method to encapsulate copper plug for interconnect metallization Feb. 24, 2004
6683357 Semiconductor constructions Jan. 27, 2004
6682989 Plating a conductive material on a dielectric material Jan. 27, 2004
6673718 Methods for forming aluminum metal wirings Jan. 6, 2004
6673704 Semiconductor device and method of manufacturing the same Jan. 6, 2004
6667220 Method for forming junction electrode of semiconductor device Dec. 23, 2003
6660650 Selective aluminum plug formation and etchback process Dec. 9, 2003
6632335 Plating apparatus Oct. 14, 2003
6610596 Method of forming metal interconnection using plating and semiconductor device manufactured by the method Aug. 26, 2003
6605535 Method of filling trenches using vapor-liquid-solid mechanism Aug. 12, 2003
6605534 Selective deposition of a conductive material Aug. 12, 2003
6593234 Methods of utilizing metal rich silicide in forming semiconductor constructions Jul. 15, 2003
6593656 Multilevel copper interconnects for ultra large scale integration Jul. 15, 2003
6579798 Processes for chemical-mechanical polishing of a semiconductor wafer Jun. 17, 2003

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