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Class Information
Number: 257/E21.586
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture of specific parts of devices (epo) > Interconnections, comprising conductors and dielectrics, for carrying current between separate components within device (epo) > Characterized by formation and post treatment of dielectrics, e.g., planarizing (epo) > Filling of holes, grooves, vias or trenches with conductive material (epo) > By selective deposition of conductive material in vias, e.g., selective chemical vapor deposition on semiconductor material, plating (epo)
Description: This subclass is indented under subclass E21.585. This subclass is substantially the same in scope as ECLA classification H01L21/768C4B.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 5219789 |
Method for forming contact portion of semiconductor device |
Jun. 15, 1993 |
| 5216282 |
Self-aligned contact studs for semiconductor structures |
Jun. 1, 1993 |
| 5212400 |
Method of depositing tungsten on silicon in a non-self-limiting CVD process and semiconductor device manufactured thereby |
May. 18, 1993 |
| 5211796 |
Apparatus for performing in-situ etch of CVD chamber |
May. 18, 1993 |
| 5203956 |
Method for performing in-situ etch of a CVD chamber |
Apr. 20, 1993 |
| 5201995 |
Alternating cyclic pressure modulation process for selective area deposition |
Apr. 13, 1993 |
| 5200360 |
Method for reducing selectivity loss in selective tungsten deposition |
Apr. 6, 1993 |
| 5198389 |
Method of metallizing contact holes in a semiconductor device |
Mar. 30, 1993 |
| 5192714 |
Method of manufacturing a multilayered metallization structure in which the conductive layer and insulating layer are selectively deposited |
Mar. 9, 1993 |
| 5188987 |
Method of manufacturing a semiconductor device using a polishing step prior to a selective vapor growth step |
Feb. 23, 1993 |
| 5187120 |
Selective deposition of metal on metal nitride to form interconnect |
Feb. 16, 1993 |
| 5183795 |
Fully planar metalization process |
Feb. 2, 1993 |
| 5180468 |
Method for growing a high-melting-point metal film |
Jan. 19, 1993 |
| 5180432 |
Apparatus for conducting a refractory metal deposition process |
Jan. 19, 1993 |
| 5169800 |
Method of fabricating semiconductor devices by laser planarization of metal layer |
Dec. 8, 1992 |
| 5169680 |
Electroless deposition for IC fabrication |
Dec. 8, 1992 |
| 5166096 |
Process for fabricating self-aligned contact studs for semiconductor structures |
Nov. 24, 1992 |
| 5164330 |
Etchback process for tungsten utilizing a NF3/AR chemistry |
Nov. 17, 1992 |
| 5156881 |
Method for forming a film on a substrate by activating a reactive gas |
Oct. 20, 1992 |
| 5154949 |
Process for forming metal deposited film containing aluminum as main component by use of alkyl aluminum hydride |
Oct. 13, 1992 |
| 5151305 |
Process for forming metal deposited film containing aluminum as main component by use of alkyl aluminum hydride |
Sep. 29, 1992 |
| 5151168 |
Process for metallizing integrated circuits with electrolytically-deposited copper |
Sep. 29, 1992 |
| 5138432 |
Selective deposition of tungsten on TiSi.sub.2 |
Aug. 11, 1992 |
| 5134092 |
Process for forming deposited film and process for producing semiconductor device |
Jul. 28, 1992 |
| 5130274 |
Copper alloy metallurgies for VLSI interconnection structures |
Jul. 14, 1992 |
| 5128278 |
Method of forming a wiring pattern for a semiconductor device |
Jul. 7, 1992 |
| 5124780 |
Conductive contact plug and a method of forming a conductive contact plug in an integrated circuit using laser planarization |
Jun. 23, 1992 |
| 5123375 |
Structure for filtering CVD chamber process gases |
Jun. 23, 1992 |
| 5112439 |
Method for selectively depositing material on substrates |
May. 12, 1992 |
| 5110759 |
Conductive plug forming method using laser planarization |
May. 5, 1992 |
| 5104694 |
Selective chemical vapor deposition of a metallic film on the silicon surface |
Apr. 14, 1992 |
| 5102830 |
Integrated circuit fabrication process for preventing overprocessing during a laser scan |
Apr. 7, 1992 |
| 5098860 |
Method of fabricating high-density interconnect structures having tantalum/tantalum oxide layers |
Mar. 24, 1992 |
| 5098516 |
Processes for the chemical vapor deposition of copper and etching of copper |
Mar. 24, 1992 |
| 5094979 |
Method of fabricating semiconductor device |
Mar. 10, 1992 |
| 5093279 |
Laser ablation damascene process |
Mar. 3, 1992 |
| 5084413 |
Method for filling contact hole |
Jan. 28, 1992 |
| 5084414 |
Metal interconnection system with a planar surface |
Jan. 28, 1992 |
| 5080763 |
Method of forming conductor lines of a semiconductor device |
Jan. 14, 1992 |
| 5081005 |
Method for reducing chemical interaction between copper features and photosensitive dielectric compositions |
Jan. 14, 1992 |
| 5071789 |
Method for forming a metal electrical connector to a surface of a semiconductor device adjacent a sidewall of insulation material with metal creep-up extending up that sidewall, and related de |
Dec. 10, 1991 |
| 5071788 |
Method for depositing tungsten on silicon in a non-self-limiting CVD process and semiconductor device manufactured thereby |
Dec. 10, 1991 |
| 5069749 |
Method of fabricating interconnect layers on an integrated circuit chip using seed-grown conductors |
Dec. 3, 1991 |
| 5070391 |
Semiconductor contact via structure and method |
Dec. 3, 1991 |
| 5067437 |
Apparatus for coating of silicon semiconductor surface |
Nov. 26, 1991 |
| 5066612 |
Method of forming wiring of a semiconductor device |
Nov. 19, 1991 |
| 5060595 |
Via filling by selective laser chemical vapor deposition |
Oct. 29, 1991 |
| 5059449 |
Method of selectively providing a metal from the liquid phase on a substrate by means of a laser |
Oct. 22, 1991 |
| 5055423 |
Planarized selective tungsten metallization system |
Oct. 8, 1991 |
| 5047367 |
Process for formation of a self aligned titanium nitride/cobalt silicide bilayer |
Sep. 10, 1991 |
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