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Class Information
Number: 257/E21.586
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture of specific parts of devices (epo) > Interconnections, comprising conductors and dielectrics, for carrying current between separate components within device (epo) > Characterized by formation and post treatment of dielectrics, e.g., planarizing (epo) > Filling of holes, grooves, vias or trenches with conductive material (epo) > By selective deposition of conductive material in vias, e.g., selective chemical vapor deposition on semiconductor material, plating (epo)
Description: This subclass is indented under subclass E21.585. This subclass is substantially the same in scope as ECLA classification H01L21/768C4B.

Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13

Patent Number Title Of Patent Date Issued
5219789 Method for forming contact portion of semiconductor device Jun. 15, 1993
5216282 Self-aligned contact studs for semiconductor structures Jun. 1, 1993
5212400 Method of depositing tungsten on silicon in a non-self-limiting CVD process and semiconductor device manufactured thereby May. 18, 1993
5211796 Apparatus for performing in-situ etch of CVD chamber May. 18, 1993
5203956 Method for performing in-situ etch of a CVD chamber Apr. 20, 1993
5201995 Alternating cyclic pressure modulation process for selective area deposition Apr. 13, 1993
5200360 Method for reducing selectivity loss in selective tungsten deposition Apr. 6, 1993
5198389 Method of metallizing contact holes in a semiconductor device Mar. 30, 1993
5192714 Method of manufacturing a multilayered metallization structure in which the conductive layer and insulating layer are selectively deposited Mar. 9, 1993
5188987 Method of manufacturing a semiconductor device using a polishing step prior to a selective vapor growth step Feb. 23, 1993
5187120 Selective deposition of metal on metal nitride to form interconnect Feb. 16, 1993
5183795 Fully planar metalization process Feb. 2, 1993
5180468 Method for growing a high-melting-point metal film Jan. 19, 1993
5180432 Apparatus for conducting a refractory metal deposition process Jan. 19, 1993
5169800 Method of fabricating semiconductor devices by laser planarization of metal layer Dec. 8, 1992
5169680 Electroless deposition for IC fabrication Dec. 8, 1992
5166096 Process for fabricating self-aligned contact studs for semiconductor structures Nov. 24, 1992
5164330 Etchback process for tungsten utilizing a NF3/AR chemistry Nov. 17, 1992
5156881 Method for forming a film on a substrate by activating a reactive gas Oct. 20, 1992
5154949 Process for forming metal deposited film containing aluminum as main component by use of alkyl aluminum hydride Oct. 13, 1992
5151305 Process for forming metal deposited film containing aluminum as main component by use of alkyl aluminum hydride Sep. 29, 1992
5151168 Process for metallizing integrated circuits with electrolytically-deposited copper Sep. 29, 1992
5138432 Selective deposition of tungsten on TiSi.sub.2 Aug. 11, 1992
5134092 Process for forming deposited film and process for producing semiconductor device Jul. 28, 1992
5130274 Copper alloy metallurgies for VLSI interconnection structures Jul. 14, 1992
5128278 Method of forming a wiring pattern for a semiconductor device Jul. 7, 1992
5124780 Conductive contact plug and a method of forming a conductive contact plug in an integrated circuit using laser planarization Jun. 23, 1992
5123375 Structure for filtering CVD chamber process gases Jun. 23, 1992
5112439 Method for selectively depositing material on substrates May. 12, 1992
5110759 Conductive plug forming method using laser planarization May. 5, 1992
5104694 Selective chemical vapor deposition of a metallic film on the silicon surface Apr. 14, 1992
5102830 Integrated circuit fabrication process for preventing overprocessing during a laser scan Apr. 7, 1992
5098860 Method of fabricating high-density interconnect structures having tantalum/tantalum oxide layers Mar. 24, 1992
5098516 Processes for the chemical vapor deposition of copper and etching of copper Mar. 24, 1992
5094979 Method of fabricating semiconductor device Mar. 10, 1992
5093279 Laser ablation damascene process Mar. 3, 1992
5084413 Method for filling contact hole Jan. 28, 1992
5084414 Metal interconnection system with a planar surface Jan. 28, 1992
5080763 Method of forming conductor lines of a semiconductor device Jan. 14, 1992
5081005 Method for reducing chemical interaction between copper features and photosensitive dielectric compositions Jan. 14, 1992
5071789 Method for forming a metal electrical connector to a surface of a semiconductor device adjacent a sidewall of insulation material with metal creep-up extending up that sidewall, and related de Dec. 10, 1991
5071788 Method for depositing tungsten on silicon in a non-self-limiting CVD process and semiconductor device manufactured thereby Dec. 10, 1991
5069749 Method of fabricating interconnect layers on an integrated circuit chip using seed-grown conductors Dec. 3, 1991
5070391 Semiconductor contact via structure and method Dec. 3, 1991
5067437 Apparatus for coating of silicon semiconductor surface Nov. 26, 1991
5066612 Method of forming wiring of a semiconductor device Nov. 19, 1991
5060595 Via filling by selective laser chemical vapor deposition Oct. 29, 1991
5059449 Method of selectively providing a metal from the liquid phase on a substrate by means of a laser Oct. 22, 1991
5055423 Planarized selective tungsten metallization system Oct. 8, 1991
5047367 Process for formation of a self aligned titanium nitride/cobalt silicide bilayer Sep. 10, 1991

1 2 3 4 5 6 7 8 9 10 11 12 13

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