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Class Information
Number: 257/E21.585
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture of specific parts of devices (epo) > Interconnections, comprising conductors and dielectrics, for carrying current between separate components within device (epo) > Characterized by formation and post treatment of dielectrics, e.g., planarizing (epo) > Filling of holes, grooves, vias or trenches with conductive material (epo)
Description: This subclass is indented under subclass E21.582. This subclass is substantially the same in scope as ECLA classification H01L21/768C4.

Sub-classes under this class:

Class Number Class Name Patents
257/E21.587 By deposition over sacrificial masking layer, e.g., lift-off (epo) 162
257/E21.586 By selective deposition of conductive material in vias, e.g., selective chemical vapor deposition on semiconductor material, plating (epo) 641
257/E21.588 Reflowing or applying pressure to fill contact hole, e.g., to remove voids (epo) 236

Patents under this class:

Patent Number Title Of Patent Date Issued
6506668 Utilization of annealing enhanced or repaired seed layer to improve copper interconnect reliability Jan. 14, 2003
6503824 Forming conductive layers on insulators by physical vapor deposition Jan. 7, 2003
6504224 Methods and structures for metal interconnections in integrated circuits Jan. 7, 2003
6504247 Integrated having a self-aligned Cu diffusion barrier Jan. 7, 2003
6500749 Method to improve copper via electromigration (EM) resistance Dec. 31, 2002
6500750 Semiconductor device and method of formation Dec. 31, 2002
6500762 Method of depositing a copper seed layer which promotes improved feature surface coverage Dec. 31, 2002
6498090 Semiconductor devices and methods for manufacturing the same Dec. 24, 2002
6498098 Method of forming embedded wiring in a groove in an insulating layer Dec. 24, 2002
6498385 Post-fuse blow corrosion prevention structure for copper fuses Dec. 24, 2002
6495443 Method of re-working copper damascene wafers Dec. 17, 2002
6495453 Method for improving the quality of a metal layer deposited from a plating bath Dec. 17, 2002
6495921 High aspect ratio metallization structures Dec. 17, 2002
6492262 Process and structure for an interlock and high performance multilevel structures for chip interconnects and packaging technologies Dec. 10, 2002
6492266 Method of forming reliable capped copper interconnects Dec. 10, 2002
6492269 Methods for edge alignment mark protection during damascene electrochemical plating of copper Dec. 10, 2002
6492735 Semiconductor device with alloy film between barrier metal and interconnect Dec. 10, 2002
6488984 Film deposition method and apparatus Dec. 3, 2002
6489199 Multiple step methods for forming conformal layers Dec. 3, 2002
6489231 Method for forming barrier and seed layer Dec. 3, 2002
6489239 Method of tungsten chemical vapor deposition and tungsten plug formation Dec. 3, 2002
6489240 Method for forming copper interconnects Dec. 3, 2002
6489683 Variable grain size in conductors for semiconductor vias and trenches Dec. 3, 2002
6486533 Metallization structures for microelectronic applications and process for forming the structures Nov. 26, 2002
6486555 Semiconductor device having a contact structure using aluminum Nov. 26, 2002
6482262 Deposition of transition metal carbides Nov. 19, 2002
6482656 Method of electrochemical formation of high Tc superconducting damascene interconnect for integrated circuit Nov. 19, 2002
6478935 Semiconductor device plating apparatus Nov. 12, 2002
6479378 Process for forming electrical interconnects in integrated circuits Nov. 12, 2002
6479384 Process for fabricating a semiconductor device Nov. 12, 2002
6479853 Semiconductor device and manufacturing method thereof Nov. 12, 2002
6475276 Production of elemental thin films using a boron-containing reducing agent Nov. 5, 2002
6475356 Method and apparatus for improving sidewall coverage during sputtering in a chamber having an inductively coupled plasma Nov. 5, 2002
6475900 Method for manufacturing a metal interconnection having enhanced filling capability Nov. 5, 2002
6475913 Method for forming damascene type of metal wires in semiconductor devices Nov. 5, 2002
6472321 Chemical vapor deposition process Oct. 29, 2002
6472322 Method of forming a metal to polysilicon contact in oxygen environment Oct. 29, 2002
6472323 Method of depositing tungsten nitride using a source gas comprising silicon Oct. 29, 2002
6468873 MIM formation method on CU damscene Oct. 22, 2002
6465354 Method of improving the planarization of wiring by CMP Oct. 15, 2002
6465887 Electronic devices with diffusion barrier and process for making same Oct. 15, 2002
6461485 Sputtering method for forming an aluminum or aluminum alloy fine wiring pattern Oct. 8, 2002
6461675 Method for forming a copper film on a substrate Oct. 8, 2002
6461957 Method of manufacturing semiconductor device Oct. 8, 2002
6458251 Pressure modulation method to obtain improved step coverage of seed layer Oct. 1, 2002
6458684 Single step process for blanket-selective CVD aluminum deposition Oct. 1, 2002
6458694 High energy sputtering method for forming interconnects Oct. 1, 2002
6458703 Method for manufacturing semiconductor devices with allevration of thermal stress generation in conductive coating Oct. 1, 2002
6458716 Method of manufacturing a semiconductor device Oct. 1, 2002

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