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Class Information
Number: 257/E21.585
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture of specific parts of devices (epo) > Interconnections, comprising conductors and dielectrics, for carrying current between separate components within device (epo) > Characterized by formation and post treatment of dielectrics, e.g., planarizing (epo) > Filling of holes, grooves, vias or trenches with conductive material (epo)
Description: This subclass is indented under subclass E21.582. This subclass is substantially the same in scope as ECLA classification H01L21/768C4.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.587 By deposition over sacrificial masking layer, e.g., lift-off (epo) 162
257/E21.586 By selective deposition of conductive material in vias, e.g., selective chemical vapor deposition on semiconductor material, plating (epo) 641
257/E21.588 Reflowing or applying pressure to fill contact hole, e.g., to remove voids (epo) 236


Patents under this class:
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Patent Number Title Of Patent Date Issued
6562710 Semiconductor device and method for fabricating the same May. 13, 2003
6562712 Multi-step planarizing method for forming a patterned thermally extrudable material layer May. 13, 2003
6563222 Method and apparatus for reducing electromigration in semiconductor interconnect lines May. 13, 2003
6559039 Doped silicon deposition process in resistively heated single wafer chamber May. 6, 2003
6559061 Method and apparatus for forming improved metal interconnects May. 6, 2003
6559489 Semiconductor device and method of manufacturing the same May. 6, 2003
6559545 Semiconductor devices and methods for manufacturing semiconductor devices May. 6, 2003
6555158 Method and apparatus for plating, and plating structure Apr. 29, 2003
6555183 Plasma treatment of a titanium nitride film formed by chemical vapor deposition Apr. 29, 2003
6551872 Method for making integrated circuit including interconnects with enhanced electromigration resistance using doped seed layer and integrated circuits produced thereby Apr. 22, 2003
6551876 Processing methods of forming an electrically conductive plug to a node location Apr. 22, 2003
6551932 Method for forming metal line in a semiconductor device Apr. 22, 2003
6548313 Amorphous carbon insulation and carbon nanotube wires Apr. 15, 2003
6548395 Method of promoting void free copper interconnects Apr. 15, 2003
6548398 Production method of semiconductor device and production device therefor Apr. 15, 2003
6548402 Method of depositing a thick titanium nitride film Apr. 15, 2003
6548415 Method for the etchback of a conductive material Apr. 15, 2003
6548683 Methods, complexes and system for forming metal-containing films Apr. 15, 2003
6548847 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE HAVING A FIRST WIRING STRIP EXPOSED THROUGH A CONNECTING HOLE, A TRANSITION-METAL FILM IN THE CONNECTING HOLE AND AN ALUMINUM WIRING STRIP THEREOVER, AN Apr. 15, 2003
6548852 Integrated circuitry and methods of forming circuitry Apr. 15, 2003
6548906 Method for reducing a metal seam in an interconnect structure and a device manufactured thereby Apr. 15, 2003
6541281 Ferroelectric circuit element that can be fabricated at low temperatures and method for making the same Apr. 1, 2003
6541808 Contact structure for semiconductor devices and corresponding manufacturing process Apr. 1, 2003
6541859 Methods and structures for silver interconnections in integrated circuits Apr. 1, 2003
6537913 Method of making a semiconductor device with aluminum capped copper interconnect pads Mar. 25, 2003
6534133 Methodology for in-situ doping of aluminum coatings Mar. 18, 2003
6534361 Method of manufacturing a semiconductor device including metal contact and capacitor Mar. 18, 2003
6534415 Method of removing polymer residues after tungsten etch back Mar. 18, 2003
6534866 Dual damascene interconnect Mar. 18, 2003
6534867 Semiconductor device, semiconductor element and method for producing same Mar. 18, 2003
6531352 Methods of forming conductive interconnects Mar. 11, 2003
6531728 Oxide etching method and structures resulting from same Mar. 11, 2003
6528180 Liner materials Mar. 4, 2003
6528835 Titanium nitride metal interconnection system and method of forming the same Mar. 4, 2003
6524950 Method of fabricating copper damascene Feb. 25, 2003
6524956 Method for controlling the grain size of tungsten films Feb. 25, 2003
6524957 Method of forming in-situ electroplated oxide passivating film for corrosion inhibition Feb. 25, 2003
6525425 Copper interconnects with improved electromigration resistance and low resistivity Feb. 25, 2003
6525426 Subresolution features for a semiconductor device Feb. 25, 2003
6521532 Method for making integrated circuit including interconnects with enhanced electromigration resistance Feb. 18, 2003
6517894 Method for plating a first layer on a substrate and a second layer on the first layer Feb. 11, 2003
6518133 Method for fabricating a small dimensional gate with elevated source/drain structures Feb. 11, 2003
6518184 Enhancement of an interconnect Feb. 11, 2003
6518185 Integration scheme for non-feature-size dependent cu-alloy introduction Feb. 11, 2003
6514844 Sidewall treatment for low dielectric constant (low K) materials by ion implantation Feb. 4, 2003
6511588 Plating method using an additive Jan. 28, 2003
6508920 Apparatus for low-temperature annealing of metallization microstructures in the production of a microelectronic device Jan. 21, 2003
6509257 Semiconductor device and process for making the same Jan. 21, 2003
6509268 Thermal densification in the early stages of copper MOCVD for depositing high quality Cu films with good adhesion and trench filling characteristics Jan. 21, 2003
6509278 Method of forming a semiconductor contact that includes selectively removing a Ti-containing layer from the surface Jan. 21, 2003

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