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Class Information
Number: 257/E21.585
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture of specific parts of devices (epo) > Interconnections, comprising conductors and dielectrics, for carrying current between separate components within device (epo) > Characterized by formation and post treatment of dielectrics, e.g., planarizing (epo) > Filling of holes, grooves, vias or trenches with conductive material (epo)
Description: This subclass is indented under subclass E21.582. This subclass is substantially the same in scope as ECLA classification H01L21/768C4.

Sub-classes under this class:

Class Number Class Name Patents
257/E21.587 By deposition over sacrificial masking layer, e.g., lift-off (epo) 162
257/E21.586 By selective deposition of conductive material in vias, e.g., selective chemical vapor deposition on semiconductor material, plating (epo) 641
257/E21.588 Reflowing or applying pressure to fill contact hole, e.g., to remove voids (epo) 236

Patents under this class:
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Patent Number Title Of Patent Date Issued
6737284 Contact structure for semiconductor devices and corresponding manufacturing process May. 18, 2004
6737314 Semiconductor device manufacturing method and semiconductor device May. 18, 2004
6737356 Method of fabricating a semiconductor work object May. 18, 2004
6734060 Semiconductor integrated circuit device and process for manufacturing May. 11, 2004
6734102 Plasma treatment for copper oxide reduction May. 11, 2004
6734511 Auto sensor function chip May. 11, 2004
6734559 Self-aligned semiconductor interconnect barrier and manufacturing method therefor May. 11, 2004
6734565 Contact structure for an integrated semiconductor device May. 11, 2004
6730196 Auxiliary electromagnets in a magnetron sputter reactor May. 4, 2004
6730596 Method of and apparatus for forming interconnection May. 4, 2004
6730597 Pre-ECD wet surface modification to improve wettability and reduced void defect May. 4, 2004
6730605 Redistribution of copper deposited films May. 4, 2004
6730954 Method of depositing tungsten nitride using a source gas comprising silicon May. 4, 2004
6730972 Amorphous carbon insulation and carbon nanotube wires May. 4, 2004
6731006 Doped copper interconnects using laser thermal annealing May. 4, 2004
6731007 Semiconductor integrated circuit device with vertically stacked conductor interconnections May. 4, 2004
6731189 Multilayer stripline radio frequency circuits and interconnection methods May. 4, 2004
6726776 Low temperature integrated metallization process and apparatus Apr. 27, 2004
6727174 Method for fabricating a dual-diameter electrical conductor Apr. 27, 2004
6723219 Method of direct electroplating on a low conductivity material, and electroplated metal deposited therewith Apr. 20, 2004
6724087 Laminated conductive lines and methods of forming the same Apr. 20, 2004
6724089 Dual damascene interconnect Apr. 20, 2004
6720245 Method of fabrication and device for electromagnetic-shielding structures in a damascene-based interconnect scheme Apr. 13, 2004
6720248 Method of forming metal interconnection layer in semiconductor device Apr. 13, 2004
6720262 Method of forming copper interconnections and thin films using chemical vapor deposition with catalyst Apr. 13, 2004
6720660 Semiconductor device and method for manufacturing the same Apr. 13, 2004
6716650 Interface void monitoring in a damascene process Apr. 6, 2004
6716733 CVD-PVD deposition process Apr. 6, 2004
6717236 Method of reducing electromigration by forming an electroplated copper-zinc interconnect and a semiconductor device thereby formed Apr. 6, 2004
6713373 Method for obtaining adhesion for device manufacture Mar. 30, 2004
6713384 Contact integration method Mar. 30, 2004
6708405 Method for producing an electrically conducting connection Mar. 23, 2004
6709555 Plating method, interconnection forming method, and apparatus for carrying out those methods Mar. 23, 2004
6709562 Method of making electroplated interconnection structures on integrated circuit chips Mar. 23, 2004
6709564 Integrated circuit plating using highly-complexed copper plating baths Mar. 23, 2004
6709966 Semiconductor device, its manufacturing process, position matching mark, pattern forming method and pattern forming device Mar. 23, 2004
6709970 Method for creating a damascene interconnect using a two-step electroplating process Mar. 23, 2004
6709987 Method and apparatus for forming improved metal interconnects Mar. 23, 2004
6710422 Semiconductor device and method of manufacturing the same Mar. 23, 2004
6710460 Semiconductor devices and methods for manufacturing the same Mar. 23, 2004
6706645 Method of manufacturing a semiconductor device Mar. 16, 2004
6703712 Microelectronic device layer deposited with multiple electrolytes Mar. 9, 2004
6700202 Semiconductor device having reduced oxidation interface Mar. 2, 2004
6696368 Titanium boronitride layer for high aspect ratio semiconductor devices Feb. 24, 2004
6689700 Chemical fluid deposition method for the formation of metal and metal alloy films on patterned and unpatterned substrates Feb. 10, 2004
6690094 High aspect ratio metallization structures Feb. 10, 2004
6690580 Integrated circuit structure with dielectric islands in metallized regions Feb. 10, 2004
6686274 Semiconductor device having cobalt silicide film in which diffusion of cobalt atoms is inhibited and its production process Feb. 3, 2004
6682602 Chemical vapor deposition systems including metal complexes with chelating O- and/or N-donor ligands Jan. 27, 2004
6680538 Semiconductor device for suppressing detachment of conductive layer Jan. 20, 2004

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