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Class Information
Number: 257/E21.585
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture of specific parts of devices (epo) > Interconnections, comprising conductors and dielectrics, for carrying current between separate components within device (epo) > Characterized by formation and post treatment of dielectrics, e.g., planarizing (epo) > Filling of holes, grooves, vias or trenches with conductive material (epo)
Description: This subclass is indented under subclass E21.582. This subclass is substantially the same in scope as ECLA classification H01L21/768C4.

Sub-classes under this class:

Class Number Class Name Patents
257/E21.587 By deposition over sacrificial masking layer, e.g., lift-off (epo) 162
257/E21.586 By selective deposition of conductive material in vias, e.g., selective chemical vapor deposition on semiconductor material, plating (epo) 641
257/E21.588 Reflowing or applying pressure to fill contact hole, e.g., to remove voids (epo) 236

Patents under this class:
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Patent Number Title Of Patent Date Issued
6838376 Method of forming semiconductor wiring structures Jan. 4, 2005
6835646 Forming conductive layers on insulators by physical vapor deposition Dec. 28, 2004
6835649 Tungsten plug with conductor capping layer Dec. 28, 2004
6836019 Semiconductor device having multilayer interconnection structure and manufacturing method thereof Dec. 28, 2004
6833625 Self-aligned barrier formed with an alloy having at least two dopant elements for minimized resistance of interconnect Dec. 21, 2004
6831330 Method and apparatus for forming an integrated circuit electrode having a reduced contact area Dec. 14, 2004
6827978 Deposition of tungsten films Dec. 7, 2004
6828225 Substrate processing method Dec. 7, 2004
6828256 Methods for forming metal-containing films using metal complexes with chelating O- and/or N-donor ligands Dec. 7, 2004
6828613 Dopant interface formation Dec. 7, 2004
6828616 Integrated circuit devices that utilize doped Poly-Si1-xGex conductive plugs as interconnects Dec. 7, 2004
6824666 Electroless deposition method over sub-micron apertures Nov. 30, 2004
6821882 Semiconductor device manufacturing method for improving adhesivity of copper metal layer to barrier layer Nov. 23, 2004
6821889 Production of elemental thin films using a boron-containing reducing agent Nov. 23, 2004
6821891 Atomic layer deposition of copper using a reducing gas and non-fluorinated copper precursors Nov. 23, 2004
6821909 Post rinse to improve selective deposition of electroless cobalt on copper for ULSI application Nov. 23, 2004
6822299 Boron-doped titanium nitride layer for high aspect ratio semiconductor devices Nov. 23, 2004
6818497 Method for fabricating capacitor using electrochemical deposition Nov. 16, 2004
6818546 Semiconductor integrated circuit device and a method of manufacturing the same Nov. 16, 2004
6818548 Fast ramp anneal for hillock suppression in copper-containing structures Nov. 16, 2004
6815368 Semiconductor substrate cleaning Nov. 9, 2004
6812126 Method for fabricating a semiconductor chip interconnect Nov. 2, 2004
6812144 Method for forming metal wiring in a semiconductor device Nov. 2, 2004
6811669 Methods and apparatus for improved current density and feature fill control in ECD reactors Nov. 2, 2004
6811670 Method for forming cathode contact areas for an electroplating process Nov. 2, 2004
6809032 Method and apparatus for detecting the endpoint of a chemical-mechanical polishing operation using optical techniques Oct. 26, 2004
6806186 Submicron metallization using electrochemical deposition Oct. 19, 2004
6806192 Method of barrier-less integration with copper alloy Oct. 19, 2004
6806573 Low angle, low energy physical vapor deposition of alloys Oct. 19, 2004
6806575 Subresolution features for a semiconductor device Oct. 19, 2004
6806579 Robust via structure and method Oct. 19, 2004
6802946 Apparatus for controlling thickness uniformity of electroplated and electroetched layers Oct. 12, 2004
6800180 Resputtering to achieve better step coverage Oct. 5, 2004
6800517 Methods of forming conductive interconnects Oct. 5, 2004
6800549 Method of fabricating semiconductor device including forming contact hole with anisotropic and isotropic etching and forming discontinuous barrier layer Oct. 5, 2004
6800552 Deposition of transition metal carbides Oct. 5, 2004
6800554 Copper alloys for interconnections having improved electromigration characteristics and methods of making same Oct. 5, 2004
6800898 Integrated circuit configuration and method of fabricating a dram structure with buried bit lines or trench capacitors Oct. 5, 2004
6793779 Sputtering method for filling holes with copper Sep. 21, 2004
6793795 Method for galvanically forming conductor structures of high-purity copper in the production of integrated circuits Sep. 21, 2004
6793797 Method for integrating an electrodeposition and electro-mechanical polishing process Sep. 21, 2004
6794238 Process for forming metallized contacts to periphery transistors Sep. 21, 2004
6794286 Process for fabricating a metal wiring and metal contact in a semicondutor device Sep. 21, 2004
6790763 Substrate processing method Sep. 14, 2004
6790776 Barrier layer for electroplating processes Sep. 14, 2004
6790780 Fabrication of 3-D capacitor with dual damascene process Sep. 14, 2004
6786936 Methods, complexes, and systems for forming metal-containing films on semiconductor structures Sep. 7, 2004
6787460 Methods of forming metal layers in integrated circuit devices using selective deposition on edges of recesses and conductive contacts so formed Sep. 7, 2004
6787465 Method of forming a metal to polysilicon contact in oxygen environment Sep. 7, 2004
6787833 Integrated circuit having a barrier structure Sep. 7, 2004

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