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Class Information
Number: 257/E21.584
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture of specific parts of devices (epo) > Interconnections, comprising conductors and dielectrics, for carrying current between separate components within device (epo) > Characterized by formation and post treatment of dielectrics, e.g., planarizing (epo) > Barrier, adhesion or liner layer (epo)
Description: This subclass is indented under subclass E21.582. This subclass is substantially the same in scope as ECLA classification H01L21/768C3.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7402516 |
Method for making integrated circuits |
Jul. 22, 2008 |
| 7396766 |
Low-temperature chemical vapor deposition of low-resistivity ruthenium layers |
Jul. 8, 2008 |
| 7394157 |
Integrated circuit and seed layers |
Jul. 1, 2008 |
| 7381638 |
Fabrication technique using sputter etch and vacuum transfer |
Jun. 3, 2008 |
| 7378339 |
Barrier for use in 3-D integration of circuits |
May. 27, 2008 |
| 7375017 |
Method for fabricating semiconductor device having stacked-gate structure |
May. 20, 2008 |
| 7368378 |
Methods for making integrated-circuit wiring from copper, silver, gold, and other metals |
May. 6, 2008 |
| 7368377 |
Method for selective deposition of a thin self-assembled monolayer |
May. 6, 2008 |
| 7365007 |
Interconnects with direct metalization and conductive polymer |
Apr. 29, 2008 |
| 7361613 |
Semiconductor device, manufacture and evaluation methods for semiconductor device, and process condition evaluation method |
Apr. 22, 2008 |
| 7361612 |
Barrier coating compositions containing silicon and methods of forming photoresist patterns using the same |
Apr. 22, 2008 |
| 7358188 |
Method of forming conductive metal silicides by reaction of metal with silicon |
Apr. 15, 2008 |
| 7351656 |
Semiconductor device having oxidized metal film and manufacture method of the same |
Apr. 1, 2008 |
| 7351655 |
Copper interconnect systems which use conductive, metal-based cap layers |
Apr. 1, 2008 |
| 7348676 |
Semiconductor device having a metal wiring structure |
Mar. 25, 2008 |
| 7335590 |
Method of fabricating semiconductor device by forming diffusion barrier layer selectively and semiconductor device fabricated thereby |
Feb. 26, 2008 |
| 7320935 |
Semiconductor device using an interconnect |
Jan. 22, 2008 |
| 7312163 |
Atomic layer deposition methods, and methods of forming materials over semiconductor substrates |
Dec. 25, 2007 |
| 7312162 |
Low temperature plasma deposition process for carbon layer deposition |
Dec. 25, 2007 |
| 7301236 |
Increasing electromigration lifetime and current density in IC using vertically upwardly extending dummy via |
Nov. 27, 2007 |
| 7294570 |
Contact integration method |
Nov. 13, 2007 |
| 7294547 |
SONOS memory cell having a graded high-K dielectric |
Nov. 13, 2007 |
| 7288479 |
Method for forming a barrier/seed layer for copper metallization |
Oct. 30, 2007 |
| 7279408 |
Semiconductor device, method for manufacturing the same, and plating solution |
Oct. 9, 2007 |
| 7279380 |
Method of forming a chalcogenide memory cell having an ultrasmall cross-sectional area and a chalcogenide memory cell produced by the method |
Oct. 9, 2007 |
| 7276434 |
Method for filling a contact hole having a small diameter and a large aspect ratio |
Oct. 2, 2007 |
| 7274104 |
Semiconductor device having an interconnect that increases in impurity concentration as width increases |
Sep. 25, 2007 |
| 7271092 |
Boron incorporated diffusion barrier material |
Sep. 18, 2007 |
| 7262505 |
Selective electroless-plated copper metallization |
Aug. 28, 2007 |
| 7259090 |
Copper damascene integration scheme for improved barrier layers |
Aug. 21, 2007 |
| 7253110 |
Method and apparatus for forming a barrier metal layer in semiconductor devices |
Aug. 7, 2007 |
| 7253103 |
Method for producing semiconductor devices that includes forming a copper film in contact with a ruthenium film |
Aug. 7, 2007 |
| 7253085 |
Deposition methods |
Aug. 7, 2007 |
| 7247939 |
Metal filled semiconductor features with improved structural stability |
Jul. 24, 2007 |
| 7235489 |
Device and method to eliminate shorting induced by via to metal misalignment |
Jun. 26, 2007 |
| 7227265 |
Electroplated copper interconnection structure, process for making and electroplating bath |
Jun. 5, 2007 |
| 7220675 |
Method of forming metal wiring of semiconductor device |
May. 22, 2007 |
| 7220668 |
Method of patterning a porous dielectric material |
May. 22, 2007 |
| 7217652 |
Method of forming highly conductive semiconductor structures via plasma etch |
May. 15, 2007 |
| 7215028 |
Semiconductor device and method for fabricating the same |
May. 8, 2007 |
| 7211512 |
Selective electroless-plated copper metallization |
May. 1, 2007 |
| 7211507 |
PE-ALD of TaN diffusion barrier region on low-k materials |
May. 1, 2007 |
| 7211479 |
Silicon rich barrier layers for integrated circuit devices |
May. 1, 2007 |
| 7202568 |
Semiconductor passivation deposition process for interfacial adhesion |
Apr. 10, 2007 |
| 7199040 |
Barrier layer structure |
Apr. 3, 2007 |
| 7192866 |
Source alternating MOCVD processes to deposit tungsten nitride thin films as barrier layers for MOCVD copper interconnects |
Mar. 20, 2007 |
| 7186646 |
Semiconductor devices and methods of forming a barrier metal in semiconductor devices |
Mar. 6, 2007 |
| 7180197 |
Semiconductor device containing stacked semiconductor chips and manufacturing method thereof |
Feb. 20, 2007 |
| 7179759 |
Barrier layer and fabrication method thereof |
Feb. 20, 2007 |
| 7170189 |
Semiconductor wafer and testing method therefor |
Jan. 30, 2007 |
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