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Class Information
Number: 257/E21.584
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture of specific parts of devices (epo) > Interconnections, comprising conductors and dielectrics, for carrying current between separate components within device (epo) > Characterized by formation and post treatment of dielectrics, e.g., planarizing (epo) > Barrier, adhesion or liner layer (epo)
Description: This subclass is indented under subclass E21.582. This subclass is substantially the same in scope as ECLA classification H01L21/768C3.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7611984 |
Manufacture method for semiconductor device having improved copper diffusion preventive function of plugs and wirings made of copper or copper alloy |
Nov. 3, 2009 |
| 7598170 |
Plasma-enhanced ALD of tantalum nitride films |
Oct. 6, 2009 |
| 7592259 |
Methods and systems for barrier layer surface passivation |
Sep. 22, 2009 |
| 7592257 |
Semiconductor contact structure containing an oxidation-resistant diffusion barrier and method of forming |
Sep. 22, 2009 |
| 7589020 |
Method for depositing titanium nitride films for semiconductor manufacturing |
Sep. 15, 2009 |
| 7585766 |
Methods of manufacturing copper interconnect systems |
Sep. 8, 2009 |
| 7585762 |
Vapor deposition processes for tantalum carbide nitride materials |
Sep. 8, 2009 |
| 7572729 |
Method of manufacturing semiconductor device |
Aug. 11, 2009 |
| 7572723 |
Micropad for bonding and a method therefor |
Aug. 11, 2009 |
| 7566661 |
Electroless treatment of noble metal barrier and adhesion layer |
Jul. 28, 2009 |
| 7557030 |
Method for fabricating a recess gate in a semiconductor device |
Jul. 7, 2009 |
| 7553743 |
Wafer bonding method of system in package |
Jun. 30, 2009 |
| 7550340 |
Silicon rich barrier layers for integrated circuit devices |
Jun. 23, 2009 |
| 7545042 |
Structure combining an IC integrated substrate and a carrier, and method of manufacturing such structure |
Jun. 9, 2009 |
| 7544609 |
Method for integrating liner formation in back end of line processing |
Jun. 9, 2009 |
| 7531902 |
Multi-layered metal line of semiconductor device having excellent diffusion barrier and method for forming the same |
May. 12, 2009 |
| 7531896 |
Semiconductor device having a minimal via resistance created by applying a nitrogen plasma to a titanium via liner |
May. 12, 2009 |
| 7528493 |
Interconnect structure and method of fabrication of same |
May. 5, 2009 |
| 7524766 |
Method for manufacturing semiconductor device and substrate processing apparatus |
Apr. 28, 2009 |
| 7524755 |
Entire encapsulation of Cu interconnects using self-aligned CuSiN film |
Apr. 28, 2009 |
| 7524749 |
Metallization method of semiconductor device |
Apr. 28, 2009 |
| 7524724 |
Method of forming titanium nitride layer and method of fabricating capacitor using the same |
Apr. 28, 2009 |
| 7521356 |
Atomic layer deposition systems and methods including silicon-containing tantalum precursor compounds |
Apr. 21, 2009 |
| 7514353 |
Contact metallization scheme using a barrier layer over a silicide layer |
Apr. 7, 2009 |
| 7510961 |
Utilization of energy absorbing layer to improve metal flow and fill in a novel interconnect structure |
Mar. 31, 2009 |
| 7491643 |
Method and structure for reducing contact resistance between silicide contact and overlying metallization |
Feb. 17, 2009 |
| 7485516 |
Method of ion implantation of nitrogen into semiconductor substrate prior to oxidation for offset spacer formation |
Feb. 3, 2009 |
| 7482684 |
Semiconductor device with a dopant region in a lower wire |
Jan. 27, 2009 |
| 7473636 |
Method to improve time dependent dielectric breakdown |
Jan. 6, 2009 |
| 7465658 |
Oxygen bridge structures and methods to form oxygen bridge structures |
Dec. 16, 2008 |
| 7462561 |
Contact structure formed using supercritical cleaning fluid and ALCVD |
Dec. 9, 2008 |
| 7459392 |
Noble metal barrier and seed layer for semiconductors |
Dec. 2, 2008 |
| 7452811 |
Method for forming a wiring of a semiconductor device, method for forming a metal layer of a semiconductor device and apparatus for performing the same |
Nov. 18, 2008 |
| 7443032 |
Memory device with chemical vapor deposition of titanium for titanium silicide contacts |
Oct. 28, 2008 |
| 7435679 |
Alloyed underlayer for microelectronic interconnects |
Oct. 14, 2008 |
| 7435678 |
Method of depositing noble metal electrode using oxidation-reduction reaction |
Oct. 14, 2008 |
| 7435676 |
Dual damascene process flow enabling minimal ULK film modification and enhanced stack integrity |
Oct. 14, 2008 |
| 7432192 |
Post ECP multi-step anneal/H.sub.2 treatment to reduce film impurity |
Oct. 7, 2008 |
| 7432184 |
Integrated PVD system using designated PVD chambers |
Oct. 7, 2008 |
| 7420275 |
Boron-doped SIC copper diffusion barrier films |
Sep. 2, 2008 |
| 7419904 |
Method for forming barrier film and method for forming electrode film |
Sep. 2, 2008 |
| 7402516 |
Method for making integrated circuits |
Jul. 22, 2008 |
| 7396766 |
Low-temperature chemical vapor deposition of low-resistivity ruthenium layers |
Jul. 8, 2008 |
| 7394157 |
Integrated circuit and seed layers |
Jul. 1, 2008 |
| 7381638 |
Fabrication technique using sputter etch and vacuum transfer |
Jun. 3, 2008 |
| 7378339 |
Barrier for use in 3-D integration of circuits |
May. 27, 2008 |
| 7375017 |
Method for fabricating semiconductor device having stacked-gate structure |
May. 20, 2008 |
| 7368378 |
Methods for making integrated-circuit wiring from copper, silver, gold, and other metals |
May. 6, 2008 |
| 7368377 |
Method for selective deposition of a thin self-assembled monolayer |
May. 6, 2008 |
| 7365007 |
Interconnects with direct metalization and conductive polymer |
Apr. 29, 2008 |
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