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Class Information
Number: 257/E21.581
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture of specific parts of devices (epo) > Interconnections, comprising conductors and dielectrics, for carrying current between separate components within device (epo) > Characterized by formation and post treatment of dielectrics, e.g., planarizing (epo) > Dielectric comprising air gaps (epo)
Description: This subclass is indented under subclass E21.576. This subclass is substantially the same in scope as ECLA classification H01L21/768B6.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7617598 |
Method of making a thermally isolated via structure |
Nov. 17, 2009 |
| 7608905 |
Independently addressable interdigitated nanowires |
Oct. 27, 2009 |
| 7598166 |
Dielectric layers for metal lines in semiconductor chips |
Oct. 6, 2009 |
| 7595554 |
Interconnect structure with dielectric air gaps |
Sep. 29, 2009 |
| 7585744 |
Method of forming a seal for a semiconductor device |
Sep. 8, 2009 |
| 7585785 |
Sacrificial benzocyclobutene copolymers for making air gap semiconductor devices |
Sep. 8, 2009 |
| 7572723 |
Micropad for bonding and a method therefor |
Aug. 11, 2009 |
| 7566653 |
Interconnect structure with grain growth promotion layer and method for forming the same |
Jul. 28, 2009 |
| 7544602 |
Method and structure for ultra narrow crack stop for multilevel semiconductor device |
Jun. 9, 2009 |
| 7544896 |
Forming a porous dielectric layer and structures formed thereby |
Jun. 9, 2009 |
| 7534696 |
Multilayer interconnect structure containing air gaps and method for making |
May. 19, 2009 |
| 7510960 |
Bridge for semiconductor internal node |
Mar. 31, 2009 |
| 7507656 |
Method and structure for low k interlayer dielectric layer |
Mar. 24, 2009 |
| 7501354 |
Formation of low K material utilizing process having readily cleaned by-products |
Mar. 10, 2009 |
| 7488686 |
Electrochemical fabrication methods including use of surface treatments to reduce overplating and/or planarization during formation of multi-layer three-dimensional structures |
Feb. 10, 2009 |
| 7485567 |
Microelectronic circuit structure with layered low dielectric constant regions and method of forming same |
Feb. 3, 2009 |
| 7485963 |
Use of supercritical fluid for low effective dielectric constant metallization |
Feb. 3, 2009 |
| 7482261 |
Interconnect structure for BEOL applications |
Jan. 27, 2009 |
| 7482265 |
UV curing of low-k porous dielectrics |
Jan. 27, 2009 |
| 7470630 |
Approach to reduce parasitic capacitance from dummy fill |
Dec. 30, 2008 |
| 7462547 |
Method of fabricating a bipolar transistor having reduced collector-base capacitance |
Dec. 9, 2008 |
| 7459389 |
Method of forming a semiconductor device having air gaps and the structure so formed |
Dec. 2, 2008 |
| 7449407 |
Air gap for dual damascene applications |
Nov. 11, 2008 |
| 7439172 |
Circuit structure with low dielectric constant regions and method of forming same |
Oct. 21, 2008 |
| 7425501 |
Semiconductor structure implementing sacrificial material and methods for making and implementing the same |
Sep. 16, 2008 |
| 7422940 |
Layer arrangement |
Sep. 9, 2008 |
| 7422975 |
Composite inter-level dielectric structure for an integrated circuit |
Sep. 9, 2008 |
| 7385276 |
Semiconductor device, and method for manufacturing the same |
Jun. 10, 2008 |
| 7371677 |
Laterally grown nanotubes and method of formation |
May. 13, 2008 |
| 7361991 |
Closed air gap interconnect structure |
Apr. 22, 2008 |
| 7352019 |
Capacitance reduction by tunnel formation for use with a semiconductor device |
Apr. 1, 2008 |
| 7348281 |
Method of filling structures for forming via-first dual damascene interconnects |
Mar. 25, 2008 |
| 7332406 |
Air gap interconnect structure and method |
Feb. 19, 2008 |
| 7319274 |
Methods for selective integration of airgaps and devices made by such methods |
Jan. 15, 2008 |
| 7316957 |
Semiconductor device and method for manufacturing the same |
Jan. 8, 2008 |
| 7316934 |
Personalized hardware |
Jan. 8, 2008 |
| 7309649 |
Method of forming closed air gap interconnects and structures formed thereby |
Dec. 18, 2007 |
| 7211496 |
Freestanding multiplayer IC wiring structure |
May. 1, 2007 |
| 7190046 |
Bipolar transistor having reduced collector-base capacitance |
Mar. 13, 2007 |
| 7157387 |
Techniques to create low K ILD for BEOL |
Jan. 2, 2007 |
| 7132374 |
Method for depositing porous films |
Nov. 7, 2006 |
| 7105420 |
Method to fabricate horizontal air columns underneath metal inductor |
Sep. 12, 2006 |
| 7084479 |
Line level air gaps |
Aug. 1, 2006 |
| 7075170 |
Semiconductor device and production method therefor |
Jul. 11, 2006 |
| 7071126 |
Densifying a relatively porous material |
Jul. 4, 2006 |
| 7071532 |
Adjustable self-aligned air gap dielectric for low capacitance wiring |
Jul. 4, 2006 |
| 7067925 |
Barrier film integrity on porous low k dielectrics by application of a hydrocarbon plasma treatment |
Jun. 27, 2006 |
| 7060638 |
Method of forming low dielectric constant porous films |
Jun. 13, 2006 |
| 7056822 |
Method of fabricating an interconnect structure employing air gaps between metal lines and between metal layers |
Jun. 6, 2006 |
| 7049220 |
Method of forming cavity between multilayered wirings |
May. 23, 2006 |
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