| |
 |
|
Class Information
Number: 257/E21.579
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture of specific parts of devices (epo) > Interconnections, comprising conductors and dielectrics, for carrying current between separate components within device (epo) > Characterized by formation and post treatment of dielectrics, e.g., planarizing (epo) > By forming via holes (epo) > For "dual damascene" type structures (epo)
Description: This subclass is indented under subclass E21.577. This subclass is substantially the same in scope as ECLA classification H01L21/768B2D.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 6670267 |
Formation of tungstein-based interconnect using thin physically vapor deposited titanium nitride layer |
Dec. 30, 2003 |
| 6670271 |
Growing a dual damascene structure using a copper seed layer and a damascene resist structure |
Dec. 30, 2003 |
| 6670278 |
Method of plasma etching of silicon carbide |
Dec. 30, 2003 |
| 6670709 |
Semiconductor device and method of manufacturing the same |
Dec. 30, 2003 |
| 6667231 |
Method of forming barrier films for copper metallization over low dielectric constant insulators in an integrated circuit |
Dec. 23, 2003 |
| 6667530 |
Semiconductor device and manufacturing method thereof |
Dec. 23, 2003 |
| 6663787 |
Use of ta/tan for preventing copper contamination of low-k dielectric layers |
Dec. 16, 2003 |
| 6664177 |
Dielectric ARC scheme to improve photo window in dual damascene process |
Dec. 16, 2003 |
| 6664179 |
Semiconductor device production method and semiconductor device production apparatus |
Dec. 16, 2003 |
| 6664181 |
Method for fabricating semiconductor device |
Dec. 16, 2003 |
| 6664182 |
Method of improving the interlayer adhesion property of low-k layers in a dual damascene process |
Dec. 16, 2003 |
| 6664192 |
Method for bottomless deposition of barrier layers in integrated circuit metallization schemes |
Dec. 16, 2003 |
| 6660546 |
Method of etching an object, method of repairing pattern, nitride pattern and semiconductor device |
Dec. 9, 2003 |
| 6660619 |
Dual damascene metal interconnect structure with dielectric studs |
Dec. 9, 2003 |
| 6660630 |
Method for forming a tapered dual damascene via portion with improved performance |
Dec. 9, 2003 |
| 6660636 |
Highly selective and complete interconnect metal line and via/contact hole filling by electroless plating |
Dec. 9, 2003 |
| 6660656 |
Plasma processes for depositing low dielectric constant films |
Dec. 9, 2003 |
| 6660663 |
Computer readable medium for holding a program for performing plasma-assisted CVD of low dielectric constant films formed from organosilane compounds |
Dec. 9, 2003 |
| 6661094 |
Semiconductor device having a dual damascene interconnect spaced from a support structure |
Dec. 9, 2003 |
| 6656532 |
Layered hard mask and dielectric materials and methods therefor |
Dec. 2, 2003 |
| 6656830 |
Dual damascene with silicon carbide middle etch stop layer/ARC |
Dec. 2, 2003 |
| 6656837 |
Method of eliminating photoresist poisoning in damascene applications |
Dec. 2, 2003 |
| 6656840 |
Method for forming silicon containing layers on a substrate |
Dec. 2, 2003 |
| 6657284 |
Graded dielectric layer and method for fabrication thereof |
Dec. 2, 2003 |
| 6657304 |
Conformal barrier liner in an integrated circuit interconnect |
Dec. 2, 2003 |
| 6657310 |
Top layers of metal for high performance IC's |
Dec. 2, 2003 |
| 6653223 |
Dual damascene method employing void forming via filling dielectric layer |
Nov. 25, 2003 |
| 6649495 |
Manufacturing method of semiconductor device |
Nov. 18, 2003 |
| 6649509 |
Post passivation metal scheme for high-performance integrated circuit devices |
Nov. 18, 2003 |
| 6649512 |
Method for improving adhesion of a low k dielectric to a barrier layer |
Nov. 18, 2003 |
| 6649515 |
Photoimageable material patterning techniques useful in fabricating conductive lines in circuit structures |
Nov. 18, 2003 |
| 6649522 |
Etch stop in damascene interconnect structure and method of making |
Nov. 18, 2003 |
| 6649531 |
Process for forming a damascene structure |
Nov. 18, 2003 |
| 6645811 |
Capacitor using high dielectric constant film for semiconductor memory device and fabrication method therefor |
Nov. 11, 2003 |
| 6645851 |
Method of forming planarized coatings on contact hole patterns of various duty ratios |
Nov. 11, 2003 |
| 6645852 |
Process for fabricating a semiconductor device having recess portion |
Nov. 11, 2003 |
| 6645853 |
Interconnects with improved barrier layer adhesion |
Nov. 11, 2003 |
| 6645864 |
Physical vapor deposition of an amorphous silicon liner to eliminate resist poisoning |
Nov. 11, 2003 |
| 6645873 |
Method for manufacturing a semiconductor device |
Nov. 11, 2003 |
| 6641982 |
Methodology to introduce metal and via openings |
Nov. 4, 2003 |
| 6642138 |
Process of making dual damascene structures using a sacrificial polymer |
Nov. 4, 2003 |
| 6642139 |
Method for forming interconnection structure in an integration circuit |
Nov. 4, 2003 |
| 6642153 |
Method for avoiding unetched polymer residue in anisotropically etched semiconductor features |
Nov. 4, 2003 |
| 6642563 |
Semiconductor memory including ferroelectric gate capacitor structure, and method of fabricating the same |
Nov. 4, 2003 |
| 6638853 |
Method for avoiding photoresist resist residue on semioconductor feature sidewalls |
Oct. 28, 2003 |
| 6638871 |
Method for forming openings in low dielectric constant material layer |
Oct. 28, 2003 |
| 6639320 |
Reticle for creating resist-filled vias in a dual damascene process |
Oct. 28, 2003 |
| 6635565 |
Method of cleaning a dual damascene structure |
Oct. 21, 2003 |
| 6635566 |
Method of making metallization and contact structures in an integrated circuit |
Oct. 21, 2003 |
| 6635583 |
Silicon carbide deposition for use as a low-dielectric constant anti-reflective coating |
Oct. 21, 2003 |
|
|
|
