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Class Information
Number: 257/E21.579
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture of specific parts of devices (epo) > Interconnections, comprising conductors and dielectrics, for carrying current between separate components within device (epo) > Characterized by formation and post treatment of dielectrics, e.g., planarizing (epo) > By forming via holes (epo) > For "dual damascene" type structures (epo)
Description: This subclass is indented under subclass E21.577. This subclass is substantially the same in scope as ECLA classification H01L21/768B2D.


Patents under this class:

Patent Number Title Of Patent Date Issued
7432191 Method of forming a dual damascene structure utilizing a developable anti-reflective coating Oct. 7, 2008
7425502 Minimizing resist poisoning in the manufacture of semiconductor devices Sep. 16, 2008
7422981 Method for manufacturing semiconductor device by using dual damascene process and method for manufacturing article having communicating hole Sep. 9, 2008
7419847 Method for forming metal interconnection of semiconductor device Sep. 2, 2008
7416992 Method of patterning a low-k dielectric using a hard mask Aug. 26, 2008
7416973 Method of increasing the etch selectivity in a contact structure of semiconductor devices Aug. 26, 2008
7410895 Methods for forming interconnect structures Aug. 12, 2008
7405153 Method for direct electroplating of copper onto a non-copper plateable layer Jul. 29, 2008
7402514 Line-to-line reliability enhancement using a dielectric liner for a low dielectric constant interlevel and intralevel (or intermetal and intrametal) dielectric layer Jul. 22, 2008
7399700 Dual damascene interconnection with metal-insulator-metal capacitor and method of fabricating Jul. 15, 2008
7396761 Semiconductor device and method of manufacturing the same Jul. 8, 2008
7387961 Dual damascene with via liner Jun. 17, 2008
7378350 Formation of low resistance via contacts in interconnect structures May. 27, 2008
7378343 Dual damascence process utilizing teos-based silicon oxide cap layer having reduced carbon content May. 27, 2008
7375030 Method to assay sacrificial light absorbing materials and spin on glass materials for chemical origin of defectivity May. 20, 2008
7375028 Method for manufacturing a semiconductor device May. 20, 2008
7375004 Method of making an isolation trench and resulting isolation trench May. 20, 2008
7372156 Method to fabricate aligned dual damascene openings May. 13, 2008
7372154 Semiconductor device May. 13, 2008
7361992 Semiconductor device including interconnects formed by damascene process and manufacturing method thereof Apr. 22, 2008
7361589 Copper interconnect systems which use conductive, metal-based cap layers Apr. 22, 2008
7358182 Method of forming an interconnect structure Apr. 15, 2008
7354859 Method of manufacturing semiconductor device Apr. 8, 2008
7354856 Method for forming dual damascene structures with tapered via portions and improved performance Apr. 8, 2008
7352064 Multiple layer resist scheme implementing etch recipe particular to each layer Apr. 1, 2008
7351635 Method of fabricating microelectronic device using super critical fluid Apr. 1, 2008
7348281 Method of filling structures for forming via-first dual damascene interconnects Mar. 25, 2008
7344972 Photosensitive dielectric layer Mar. 18, 2008
7338895 Method for dual damascene integration of ultra low dielectric constant porous materials Mar. 4, 2008
7335991 Pattern forming structure, pattern forming method, device, electro-optical device, and electronic apparatus Feb. 26, 2008
7335588 Interconnect structure and method of fabrication of same Feb. 26, 2008
7329955 Metal-insulator-metal (MIM) capacitor Feb. 12, 2008
7329602 Wiring structure for integrated circuit with reduced intralevel capacitance Feb. 12, 2008
7323407 Method of fabricating dual damascene interconnections of microelectronic device using diffusion barrier layer against base material Jan. 29, 2008
7319071 Methods for forming a metallic damascene structure Jan. 15, 2008
7315082 Semiconductor device having integrated circuit contact Jan. 1, 2008
7314823 Chemical mechanical polishing composition and process Jan. 1, 2008
7312146 Semiconductor device interconnect fabricating techniques Dec. 25, 2007
7309649 Method of forming closed air gap interconnects and structures formed thereby Dec. 18, 2007
7307016 Method of processing metal surface in dual damascene manufacturing Dec. 11, 2007
7307015 Method for forming an interconnection line in a semiconductor device Dec. 11, 2007
7307014 Method of forming a via contact structure using a dual damascene process Dec. 11, 2007
7300867 Dual damascene interconnect structures having different materials for line and via conductors Nov. 27, 2007
7300825 Customizing back end of the line interconnects Nov. 27, 2007
7285490 Method for the producing an integrated circuit bar arrangement, in particular comprising a capacitor assembly, in addition to an integrated circuit arrangement Oct. 23, 2007
7285489 Dual damascene process for forming a multi-layer low-k dielectric interconnect Oct. 23, 2007
7274104 Semiconductor device having an interconnect that increases in impurity concentration as width increases Sep. 25, 2007
7265450 Semiconductor device and method for fabricating the same Sep. 4, 2007
7262133 Enhancement of copper line reliability using thin ALD tan film to cap the copper line Aug. 28, 2007
7259089 Semiconductor device manufacturing method that includes forming a wiring pattern with a mask layer that has a tapered shape Aug. 21, 2007



 
 
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