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Browse by Category: Main > Physics
Class Information
Number: 257/E21.574
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture of specific parts of devices (epo) > Making of isolation regions between components (epo) > Isolation by field effect (epo)
Description: This subclass is indented under subclass E21.54. This subclass is substantially the same in scope as ECLA classification H01L21/765.










Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
7989309 Method of improving a shallow trench isolation gapfill process Aug. 2, 2011
7858964 Semiconductor device formed in a recrystallized layer Dec. 28, 2010
7811934 Method of manufacturing nanoelectrode lines using nanoimprint lithography process Oct. 12, 2010
7732889 Capacitor structure in a semiconductor device Jun. 8, 2010
7667302 Integrated circuit chip with seal ring structure Feb. 23, 2010
7662676 Signal line for display device and thin film transistor array panel including the signal line Feb. 16, 2010
7521741 Shielding structures for preventing leakages in high voltage MOS devices Apr. 21, 2009
7462895 Signal line for display device and thin film transistor array panel including the signal line Dec. 9, 2008
7282441 De-fluorination after via etch to preserve passivation Oct. 16, 2007
7224021 MOSFET with high angle sidewall gate and contacts for reduced miller capacitance May. 29, 2007
6992362 Semiconductor with high-voltage components and low-voltage components on a shared die Jan. 31, 2006
6949454 Guard ring structure for a Schottky diode Sep. 27, 2005
6933207 Method of forming integrated circuitry Aug. 23, 2005
6917076 Semiconductor device, a method of manufacturing the semiconductor device and a method of deleting information from the semiconductor device Jul. 12, 2005
6784515 Semiconductor integrated circuit device Aug. 31, 2004
6784493 Line self protecting multiple output power IC architecture Aug. 31, 2004
6781212 Selectively doped trench device isolation Aug. 24, 2004
6770935 Array of transistors with low voltage collector protection Aug. 3, 2004
6762447 Field-shield-trench isolation for gigabit DRAMs Jul. 13, 2004
6753575 Tank-isolated-drain-extended power device Jun. 22, 2004
6747294 Guard ring structure for reducing crosstalk and latch-up in integrated circuits Jun. 8, 2004
6744112 Multiple chip guard rings for integrated circuit and chip guard ring interconnect Jun. 1, 2004
6709900 Method of fabricating integrated system on a chip protection circuit Mar. 23, 2004
6710427 Distributed power device with dual function minority carrier reduction Mar. 23, 2004
6696349 STI leakage reduction Feb. 24, 2004
6657229 Semiconductor device having multiple transistors sharing a common gate Dec. 2, 2003
6656803 Radiation hardened semiconductor memory Dec. 2, 2003
6656781 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, HAVING FIRST AND SECOND SEMICONDUCTOR REGIONS WITH FIELD SHIELD ISOLATION STRUCTURES AND A FIELD OXIDE FILM COVERING A JUNCTION BETWEEN SEMICOND Dec. 2, 2003
6646319 Semiconductor device having isolating region for suppressing electrical noise Nov. 11, 2003
6642551 Stable high voltage semiconductor device structure Nov. 4, 2003
6593601 Integrated circuit device that can suppress undesired inter-device effects Jul. 15, 2003
6573550 Semiconductor with high-voltage components and low-voltage components on a shared die Jun. 3, 2003
6525389 High voltage termination with amorphous silicon layer below the field plate Feb. 25, 2003
6514799 Method for substrate noise distribution Feb. 4, 2003
6486013 Method of manufacturing a semiconductor device having regions of different conductivity types isolated by field oxide Nov. 26, 2002
6482692 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, HAVING FIRST AND SECOND SEMICONDUCTOR REGIONS WITH FIELD SHIELD ISOLATION STRUCTURES AND A FIELD OXIDE FILM COVERING A JUNCTION BETWEEN SEMICOND Nov. 19, 2002
6479880 Floating gate isolation device Nov. 12, 2002
6476451 Buried guard rings for CMOS device Nov. 5, 2002
6475851 Circuit for providing isolation of integrated circuit active areas Nov. 5, 2002
6455884 Radiation hardened semiconductor memory with active isolation regions Sep. 24, 2002
6437416 Semiconductor structure having a planar junction termination with high breakdown voltage and low parasitic capacitance Aug. 20, 2002
6429502 Multi-chambered trench isolated guard ring region for providing RF isolation Aug. 6, 2002
6426542 Schottky diode with dielectric trench Jul. 30, 2002
6424014 Semiconductor element with electric field reducing device mounted therein for increasing dielectric strength Jul. 23, 2002
6399413 Self aligned gated Schottky diode guard ring structures Jun. 4, 2002
6399991 Semiconductor integrated circuit Jun. 4, 2002
6380598 Radiation hardened semiconductor memory Apr. 30, 2002
6359297 Semiconductor device with movement of positive ion prevented Mar. 19, 2002
6337254 Method of forming trench isolation structure with dummy active regions and overlying discriminately doped conduction layer Jan. 8, 2002
6306728 Stable high voltage semiconductor device structure Oct. 23, 2001

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