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Class Information
Number: 257/E21.573
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture of specific parts of devices (epo) > Making of isolation regions between components (epo) > Air gaps (epo)
Description: This subclass is indented under subclass E21.54. This subclass is substantially the same in scope as ECLA classification H01L21/764.

Patents under this class:
1 2 3 4 5 6 7

Patent Number Title Of Patent Date Issued
4292730 Method of fabricating mesa bipolar memory cell utilizing epitaxial deposition, substrate removal and special metallization Oct. 6, 1981
4282538 Method of integrating semiconductor components Aug. 4, 1981
4276099 Fabrication of infra-red charge coupled devices Jun. 30, 1981
4257061 Thermally isolated monolithic semiconductor die Mar. 17, 1981
4217153 Method of manufacturing semiconductor device Aug. 12, 1980
4199860 Method of integrating semiconductor components Apr. 29, 1980
4187516 Semiconductor integrated circuits Feb. 5, 1980
4187125 Method for manufacturing semiconductor structures by anisotropic and isotropic etching Feb. 5, 1980
4169000 Method of forming an integrated circuit structure with fully-enclosed air isolation Sep. 25, 1979
4155783 Semiconductor structures and methods for manufacturing such structures May. 22, 1979
4144098 P.sup.+ Buried layer for I.sup.2 L isolation by ion implantation Mar. 13, 1979
4142925 Method of making silicon-insulator-polysilicon infrared image device utilizing epitaxial deposition and selective etching Mar. 6, 1979
4127900 Reading capacitor memories with a variable voltage ramp Nov. 28, 1978
4106050 Integrated circuit structure with fully enclosed air isolation Aug. 8, 1978
4106046 Radiant energy sensor Aug. 8, 1978
4079407 Single chip electronic switching circuit responsive to external stimuli Mar. 14, 1978
4075043 Liquid phase epitaxy method of growing a junction between two semiconductive materials utilizing an interrupted growth technique Feb. 21, 1978
4072982 Semiconductor component with dielectric carrier and its manufacture Feb. 7, 1978
4070748 Integrated circuit structure having semiconductor resistance regions Jan. 31, 1978
4070230 Semiconductor component with dielectric carrier and its manufacture Jan. 24, 1978
4068255 Mesa-type high voltage switching integrated circuit Jan. 10, 1978
4063271 FET and bipolar device and circuit process with maximum junction control Dec. 13, 1977
4056414 Process for producing an improved dielectrically-isolated silicon crystal utilizing adjacent areas of different insulators Nov. 1, 1977
4047195 Semiconductor structure Sep. 6, 1977
4044373 IGFET with gate protection diode and antiparasitic isolation means Aug. 23, 1977
4042948 Integrated circuit isolation with mesas and/or insulating substrate Aug. 16, 1977
4017341 Method of manufacturing semiconductor integrated circuit with prevention of substrate warpage Apr. 12, 1977
3989946 Arrays for infrared image detection Nov. 2, 1976
3979612 V-groove isolated integrated circuit memory with integral pinched resistors Sep. 7, 1976
3936929 Fet and bipolar device and circuit process with maximum junction control Feb. 10, 1976
3934159 Semiconductor circuit devices using insulated gate-type field effect elements having protective diodes Jan. 20, 1976

1 2 3 4 5 6 7

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