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Class Information
Number: 257/E21.573
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture of specific parts of devices (epo) > Making of isolation regions between components (epo) > Air gaps (epo)
Description: This subclass is indented under subclass E21.54. This subclass is substantially the same in scope as ECLA classification H01L21/764.










Patents under this class:
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Patent Number Title Of Patent Date Issued
6495900 Insulator for electrical structure Dec. 17, 2002
6492245 Method of forming air gap isolation between a bit line contact structure and a capacitor under bit line structure Dec. 10, 2002
6489215 Method of making insulator for electrical structures Dec. 3, 2002
6472719 Method of manufacturing air gap in multilevel interconnection Oct. 29, 2002
6472244 Manufacturing method and integrated microstructures of semiconductor material and integrated piezoresistive pressure sensor having a diaphragm of polycrystalline semiconductor material Oct. 29, 2002
6468877 Method to form an air-gap under the edges of a gate electrode by using disposable spacer/liner Oct. 22, 2002
6455393 Air bridge/dielectric fill inductors Sep. 24, 2002
6429522 Microprocessor having air as a dielectric and encapsulated lines Aug. 6, 2002
6423573 Integrated electronic circuit comprising at least an electronic power component Jul. 23, 2002
6406975 Method for fabricating an air gap shallow trench isolation (STI) structure Jun. 18, 2002
6403430 Semiconductor structure having more usable substrate area and method for forming same Jun. 11, 2002
6396119 Reduced RC delay between adjacent substrate wiring lines May. 28, 2002
6395618 Method for manufacturing integrated structures including removing a sacrificial region May. 28, 2002
6387725 Production method for integrated angular speed sensor device May. 14, 2002
6376893 Trench isolation structure and fabrication method thereof Apr. 23, 2002
6376291 Process for manufacturing buried channels and cavities in semiconductor material wafers Apr. 23, 2002
6373123 Semiconductor structure having more usable substrate area and method for forming same Apr. 16, 2002
6355535 Method and structure of manufacturing a high-Q inductor with an air trench Mar. 12, 2002
6352932 Methods of forming integrated circuitry and integrated circuitry structures Mar. 5, 2002
6335261 Directional CVD process with optimized etchback Jan. 1, 2002
6326673 Method and structure of manufacturing a high-Q inductor with an air trench Dec. 4, 2001
6309946 Reduced RC delay between adjacent substrate wiring lines Oct. 30, 2001
6303976 Power sensor Oct. 16, 2001
6303462 Process for physical isolation of regions of a substrate board Oct. 16, 2001
6294909 Electro-magnetic lithographic alignment method Sep. 25, 2001
6288561 Method and apparatus for probing, testing, burn-in, repairing and programming of integrated circuits in a closed environment using a single apparatus Sep. 11, 2001
6268261 Microprocessor having air as a dielectric and encapsulated lines and process for manufacture Jul. 31, 2001
6268637 Method of making air gap isolation by making a lateral EPI bridge for low K isolation advanced CMOS fabrication Jul. 31, 2001
6255712 Semi-sacrificial diamond for air dielectric formation Jul. 3, 2001
6221727 Method to trap air at the silicon substrate for improving the quality factor of RF inductors in CMOS technology Apr. 24, 2001
6209394 Integrated angular speed sensor device and production method thereof Apr. 3, 2001
6197655 Method for manufacturing integrated structures including removing a sacrificial region Mar. 6, 2001
6198158 Memory circuit including a semiconductor structure having more usable substrate area Mar. 6, 2001
6190996 Method of making an insulator for electrical structures Feb. 20, 2001
6191467 Semiconductor device and method for fabricating the same Feb. 20, 2001
6184052 Process for manufacturing high-sensitivity capacitive and resonant integrated sensors, particularly accelerometers and gyroscopes, and sensors made therefrom Feb. 6, 2001
6184051 Process for manufacturing high-sensitivity accelerometric and gyroscopic integrated sensors, and sensor thus produced Feb. 6, 2001
6180995 Integrated passive devices with reduced parasitic substrate capacitance Jan. 30, 2001
6177329 Integrated circuit structures having gas pockets and method for forming integrated circuit structures having gas pockets Jan. 23, 2001
6160283 Methods of forming integrated circuitry and integrated circuitry structures Dec. 12, 2000
6146989 Method of fabricating semiconductor device with cavity interposed between wirings Nov. 14, 2000
6147397 Stress isolated integrated circuit and method for making Nov. 14, 2000
6144072 Semiconductor device formed on insulating layer and method of manufacturing the same Nov. 7, 2000
6133063 Process for producing a pin layer sequence on a perovskite and a perovskite having a pin layer sequence Oct. 17, 2000
6130151 Method of manufacturing air gap in multilevel interconnection Oct. 10, 2000
6109106 Process for manufacturing high-sensitivity accelerometric and gyroscopic integrated sensors, and sensor thus produced Aug. 29, 2000
6107210 Maskless method for fabricating a low-loss microwave power sensor device Aug. 22, 2000
6104065 Semiconductor device having an active region in a substrate with trapezoidal cross-sectional structure Aug. 15, 2000
6090638 Process for manufacturing high-sensitivity capacitive and resonant integrated sensors, particularly accelerometers and gyroscopes, and sensors made therefrom Jul. 18, 2000
6087263 Methods of forming integrated circuitry and integrated circuitry structures Jul. 11, 2000

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