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Class Information
Number: 257/E21.572
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (epo) > Manufacture of specific parts of devices (epo) > Making of isolation regions between components (epo) > Polycrystalline semiconductor regions (epo)
Description: This subclass is indented under subclass E21.54. This subclass is substantially the same in scope as ECLA classification H01L21/763.

Patents under this class:
1 2 3 4 5 6 7 8 9 10 11

Patent Number Title Of Patent Date Issued
8673737 Array and moat isolation structures and method of manufacture Mar. 18, 2014
8623731 Methods of forming electrostatic discharge devices Jan. 7, 2014
8552524 Semiconductor component with trench insulation and corresponding production method Oct. 8, 2013
8350355 Electrostatic discharge devices Jan. 8, 2013
8334190 Single step CMP for polishing three or more layer film stacks Dec. 18, 2012
8263474 Reduced defect silicon or silicon germanium deposition in micro-features Sep. 11, 2012
8080450 Method of manufacturing semiconductor thin film Dec. 20, 2011
7833876 Semiconductor device having multiple element formation regions and manufacturing method thereof Nov. 16, 2010
7786587 Semiconductor device and method for manufacturing thereof Aug. 31, 2010
7786547 Formation of active area using semiconductor growth process without STI integration Aug. 31, 2010
7723204 Semiconductor device with a multi-plate isolation structure May. 25, 2010
7642605 Semiconductor device Jan. 5, 2010
7601607 Protruded contact and insertion of inter-layer-dielectric material to match damascene hardmask to improve undercut for low-k interconnects Oct. 13, 2009
7541295 Method of manufacturing semiconductor device Jun. 2, 2009
7521341 Method of direct deposition of polycrystalline silicon Apr. 21, 2009
7439116 Apparatus and method for forming polycrystalline silicon thin film Oct. 21, 2008
7436075 Ion beam irradiation apparatus and ion beam irradiation method Oct. 14, 2008
7435667 Method of controlling polysilicon crystallization Oct. 14, 2008
7413939 Method of growing a germanium epitaxial film on insulator for use in fabrication of CMOS integrated circuit Aug. 19, 2008
7410891 Method of manufacturing a superjunction device Aug. 12, 2008
7384810 Image display device and method for manufacturing the same Jun. 10, 2008
7371655 Method of fabricating low-power CMOS device May. 13, 2008
7309637 Method to enhance device performance with selective stress relief Dec. 18, 2007
7238568 Trench semiconductor device having gate oxide layer with multiple thicknesses and processes of fabricating the same Jul. 3, 2007
7154159 Trench isolation structure and method of forming the same Dec. 26, 2006
7135391 Polycrystalline SiGe junctions for advanced devices Nov. 14, 2006
7109110 Method of manufacturing a superjunction device Sep. 19, 2006
7067874 Semiconductor device including trench with at least one of an edge of an opening and a bottom surface being round Jun. 27, 2006
7067406 Thermal conducting trench in a semiconductor structure and method for forming the same Jun. 27, 2006
7063751 Semiconductor substrate formed by epitaxially filling a trench in a semiconductor substrate with a semiconductor material after smoothing the surface and rounding the corners Jun. 20, 2006
7041572 Fabrication method for a deep trench isolation structure of a high-voltage device May. 9, 2006
7015086 Method of forming a shallow trench-deep trench isolation region for a BiCMOS/CMOS technology Mar. 21, 2006
7015077 Varied trench depth for thyristor isolation Mar. 21, 2006
6995449 Deep trench isolation region with reduced-size cavities in overlying field oxide Feb. 7, 2006
6984868 Semiconductor device having a structure for isolating elements Jan. 10, 2006
6977208 Schottky with thick trench bottom and termination oxide and process for manufacture Dec. 20, 2005
6974749 Bottom oxide formation process for preventing formation of voids in trench Dec. 13, 2005
6972471 Deep trench isolation structure of a high-voltage device and method for forming thereof Dec. 6, 2005
6955972 Methods of fabricating integrated circuit devices having trench isolation structures Oct. 18, 2005
6919612 Biasable isolation regions using epitaxially grown silicon between the isolation regions Jul. 19, 2005
6903435 Vertical power component Jun. 7, 2005
6897542 Semiconductor assemblies May. 24, 2005
6887768 Method and structure for composite trench fill May. 3, 2005
6864151 Method of forming shallow trench isolation using deep trench isolation Mar. 8, 2005
6861312 Method for fabricating a trench structure Mar. 1, 2005
6849918 Miniaturized dielectrically isolated solid state device Feb. 1, 2005
6835997 Thyristor-based device with trench dielectric material Dec. 28, 2004
6833293 Semiconductor device and method for manufacturing the same Dec. 21, 2004
6833291 Semiconductor processing methods Dec. 21, 2004
6828649 Semiconductor device having an interconnect that electrically connects a conductive material and a doped layer, and a method of manufacture therefor Dec. 7, 2004

1 2 3 4 5 6 7 8 9 10 11

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